• Title/Summary/Keyword: kinetic Monte Carlo

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이온채널에서 이온전류의 주기적 패턴에 대한 동역학적 격자기반 대정준 Monte Carlo 모의실험 연구

  • Jeong, Ji-Eun;Jin, Hyo-Min;Hwang, Hyeon-Seok
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.135-139
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    • 2016
  • 본 연구에서는 동역학적 격자기반 대정준 Monte Carlo (Kinetic Lattice Grand Canonical Monte Carlo, KLGCMC) 모의실험 방법을 이용하여 모델 이온채널 내에서 KCl과 HCl의 이온 전류를 시간의 함수로 구하였다. KLGCMC 모의실험 계산 결과로부터 이온채널의 양이온 선택성이 더 큰 것을 확인 할 수 있었다. 또한 모의실험 결과를 통해 각 이온의 확산계수가 전류에 미치는 영향을 확인 할 수 있었다. $H^+$ 이온은 농도가 매우 작음에도 확산계수가 커 전체 전류에 큰 영향을 미쳤다. 반면에 확산계수가 작은 $K^+$ 이온은 이온채널 안에서 쉽게 흐르지 못하고 정체 되며, $H^+$ 이온의 전류흐름을 방해하는 것을 확인 할 수 있었고, 이로 인해 이온전류의 패턴이 시간에 따라 변화함을 알 수 있었다.

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Research on the penetration depth of low-energy electron beam in the PMMA-resist film using Monte Carlo numerical analysis (Monte Carlo 수치해석법을 이용한 PMMA resist에서의 저 에너지 전자빔 투과 깊이에 관한 연구)

  • Ahn, Seung-Joon;Ahn, Seong-Joon;Kim, Ho-Seob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.4
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    • pp.743-747
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    • 2007
  • There has been steady effect for the development of the electron-beam lithography technologies for the circuit patterning of the future semiconductor devices. In this study, we have performed a Monte-Carlo simulation whore $1{\times}10^4$ electrons with various kinetic energies (100eV, 300eV, 500eV, 700eV, and 1000eV) were shot into polymethyl methacrylate(PMMA) resist of 100-nm thickness. The penetration depth of each electron beam in the resist layer were analyzed using Gaussian analysis method.

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Monte Carlo Simulation of Thermionic Low Pressure Discharge Plasma (저압 열전자 방전 플라즈마의 Monte Carlo 시뮬레이션)

  • Koh, Wook Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.12
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    • pp.1880-1885
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    • 2012
  • Nonlinear dynamical behaviors in thermionic low pressure discharge are investigated using a particle-in-cell(PIC) simulation. An electrostatic PIC code is developed to model the plasma discharge system including the kinetic effects. The elastic collision, excitation collision, ionization collision, and electron-ion recombination collision are considered in this code. The generated electrons and ions are traced to analyze physical characteristics of the plasma. The simulation results show that the nonlinear oscillation structures are observed for cold plasma in the system and the similar structures are observed for warm plasma with a shift in values of the bifurcation parameter. The detailed oscillation process can be subdivided into three distinct mode; anode-glow, temperature-limited, and double-layer modes.

비정상 몰분율 효과에 대한 동역학적 격자기반 대정준 Monte Carlo 모의실험 연구

  • Yeo, Hye-Jin;Hwang, Hyeon-Seok
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.102-107
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    • 2016
  • 본 연구에서는 동역학적 격자기반 대정준 Monte Carlo (Kinetic Lattice Grand Canonical Monte Carlo, KLGCMC) 모의실험 방법을 이용하여 비정상 몰분율 효과 (Anomalous mole fraction effect)에 대해서 알아보고자 하였다. 이를 위해 양이온 선택성을 가진 이온채널 모델에서 $NH_4{^+}$$Rb^+$의 혼합물에 대하여 몰분율의 변화에 따른 이온전도도를 KLGCMC 모의실험을 이용하여 계산하고, 이를 평균장 이론인 Poisson-Nernst-Planck (PNP)의 결과와 비교해 봄으로써 비정상 몰분율 효과에 대하여 심도 있게 이해하고자 하였다. 본 연구 결과로부터 비정상 몰분율 효과는 이온채널의 이온 선택성에 의해서 발생함을 확인할 수 있었다. 즉, 두 종류 이상의 이온들이 채널 내부로 이동할 때, 이온채널의 이온 선택성에 의해서 각 이온들과 채널 간에 서로 상이한 상호작용을 하게 되고, 이로 인해서 이온 혼합물 조성의 변화, 즉 몰분율의 변화에 대해서 이온 전류가 선형적이 아닌 비선형적으로 변하게 됨을 알 수 있었다.

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Investigation of Electrical Coupling Effect by Random Dopant Fluctuation of Monolithic 3D Inverter (Monolithic 3D Inverter의 RDF에 의한 전기적 커플링 영향 조사)

  • Lee, Geun Jae;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.05a
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    • pp.481-482
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    • 2022
  • In this paper, effect of random dopant fluctuation (RDF) of the top-transistor in a monolithic 3D inverter composed of MOSFET transistors is investigated with 3D TCAD simulation when the gate voltage of the bottom-transistor is changed. The sampling for investigating RDF effect was conducted through the kinetic monte carlo method, and the RDF effect on the threshold voltage variation in the top-transistor was investigated, and the electrical coupling between top-transistors and bottom-transistors was investigated.

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Evaluation Internal Radiation Dose of Pediatric Patients during Medicine Tests Using Monte Carlo Simulation (몬테칼로 시뮬레이션을 이용한 소아 핵의학검사 시 인체내부 장기선량 평가)

  • Lee, Dong-yeon;Kang, Yeong-rok
    • Journal of radiological science and technology
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    • v.44 no.2
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    • pp.109-115
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    • 2021
  • In this study, a physical evaluation of internal radiation exposure in children was conducted using nuclear medicine test(Renal DTPA Dynamic Study) to simulate the distribution and effects of the radiation throughout the tracer kinetics over time. Monte Carlo simulations were performed to determine the internal medical radiation exposure during the tests and to provide basic data for medical radiation exposure management. Specifically, dose variability based on changes in the tracer kinetic was simulated over time. The internal exposure to the target organ (kidney) and other surrounding organs was then quantitatively evaluated and presented. When kidney function was normal, the dose to the target organ(kidney) was approximately 0.433 mGy/mCi, and the dose to the surrounding organs was approximately 0.138-0.266 mGy/mCi. When kidney function was abnormal, the dose to the surrounding organs was 0.228-0.419 mGy/mCi. This study achieved detailed radiation dose measurements in highly sensitive pediatric patients and enabled the prediction of radiation doses according to kidney function values. The proposed method can provide useful insights for medical radiation exposure management, which is particularly important and necessary for pediatric patients.

Quantum Chemical Molecular Dynamics and Kinetic Monte Carlo Approach to the Design of MgO Protecting Layer in Plasma Display Panel

  • Kubo, Momoji;Kikuchi, Hiromi;Tsuboi, Hideyuki;Koyama, Michihisa;Endou, Akira;Carpio, Carlos A. Del;Kajiyama, Hiroshi;Miyamoto, Akira
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.371-374
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    • 2006
  • We developed new quantum chemical molecular dynamics and kinetic Monte Carlo programs to simulate the destruction processes of MgO protecting layer in plasma display panel. Our simulation results proposed that MgO(111) surface with nano-dot structures covered by (001) facets has the highest stability, which is against the previous knowledge. The formation of nano-dot structures on the MgO(111) surface covered by (001) facets was found to be the reason for the high stability of the MgO(111) surface. Furthermore, the effect of grain boundary on the stability of MgO surfaces was also clarified.

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MULTISCALE MODELING OF RADIATION EFFECTS ON MATERIALS: PRESSURE VESSEL EMBRITTLEMENT

  • Kwon, Jun-Hyun;Lee, Gyeong-Geun;Shin, Chan-Sun
    • Nuclear Engineering and Technology
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    • v.41 no.1
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    • pp.11-20
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    • 2009
  • Radiation effects on materials are inherently multiscale phenomena in view of the fact that various processes spanning a broad range of time and length scales are involved. A multiscale modeling approach to embrittlement of pressure vessel steels is presented here. The approach includes an investigation of the mechanisms of defect accumulation, microstructure evolution and the corresponding effects on mechanical properties. An understanding of these phenomena is required to predict the behavior of structural materials under irradiation. We used molecular dynamics (MD) simulations at an atomic scale to study the evolution of high-energy displacement cascade reactions. The MD simulations yield quantitative information on primary damage. Using a database of displacement cascades generated by the MD simulations, we can estimate the accumulation of defects over diffusional length and time scales by applying kinetic Monte Carlo simulations. The evolution of the local microstructure under irradiation is responsible for changes in the physical and mechanical properties of materials. Mechanical property changes in irradiated materials are modeled by dislocation dynamics simulations, which simulate a collective motion of dislocations that interact with the defects. In this paper, we present a multi scale modeling methodology that describes reactor pressure vessel embrittlement in a light water reactor environment.