• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.436-444
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• 2016

Oil-paper insulation of valve-side windings in converter transformers withstand electrical stresses combining with AC, DC and strong harmonic components. This paper presents the physical mechanisms and experimental researches on partial discharge (PD) of oil-paper insulation at pulsating DC voltage. Theoretical analysis showed that the phase-resolved distributions of PDs generated from different insulated models varied as the increase of the applied voltages following a certain rule. Four artificial insulation defect models were designed to generate PD signals at pulsating DC voltages. Theoretical statements and experimental results show that the PD pulses first appear at the maximum value of the applied pulsating DC voltage, and the resolved PD phase distribution became wider as the applied voltage increased. The PD phase-resolved distributions generated from the different discharge models are also different in the phase-resolved distributions and development progress. It implies that the theoretical analysis is suitable for interpretation of PD at pulsating DC voltage.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2545-2552
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• 2018

$SF_6$ has been widely used in high voltage power equipment, such as gas insulated switchgear (GIS) and gas insulated transmission line (GIL), because of its excellent insulation and arc extinguishing performance. However, $SF_6$ faces two environmental problems: greenhouse effect and high liquefaction temperature. Therefore, to find the $SF_6$ substitute gases has become a research hotspot in recent years. In this paper, the liquefaction characteristics of $SF_6$ substitute gases were studied. Peng-Robinson equation of state with the van der Waals mixing rule (PR-vdW model) was used to calculate the dew point temperature of the binary gas mixtures, with $SF_6$, $C_3F_8$, $c-C_4F_8$, $CF_3I$ or $C_4F_7N$ as the insulating gas and $N_2$ or $CO_2$ as the buffer gas. The sequence of the dew point temperatures of the binary gas mixtures under the same pressure and composition ratio was obtained. $SF_6/N_2$ < $SF_6/CO_2$ < $C_3F_8/N_2$ < $C_3F_8/CO_2$ < $CF_3I/N_2$ < $CF_3I/CO_2$ < $c-C_4F_8/N_2$ < $C_4F_7N/N_2$ < $c-C_4F_8/CO_2$ < $C_4F_7N/CO_2$. $SF_6/N_2$ gas mixture showed the best temperature adaptability and $C_4F_7N/CO_2$ gas mixture showed the worst temperature adaptability. Furthermore, the dew point temperatures of the $SF_6$ substitute gases at different pressures and the upper limits of the insulating gas mole fraction at $-30^{\circ}C$, $-20^{\circ}C$ and $-10^{\circ}C$ were obtained. The results would supply sufficient data support for GIS/GIL operators and researchers.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.344-354
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• 2015

In order to study the development of partial discharge (PD) under typical protrusion defects in gas-insulated switchgear, we applied step voltages on the defect and obtained the ${\varphi}-u$ and ${\varphi}-n$ spectrograms of ultra-high frequency (UHF) PD signals in various PD stages. Furthermore, we extracted seven kinds of features to characterize the degree of deterioration of insulation and analyzed their values, variation trends, and change rates. These characteristics were inconsistent with the development of PD. Hence, the differences of these features could describe the severity of PD. In addition, these characteristics could provide integrated characteristics regarding PD development and improve the reliability of PD severity assessment because these characteristics were extracted from different angles. To explain the variation laws of these seven kinds of parameters, we analyzed the relevant physical mechanism by considering the microphysical process of PD formation and development as well as the distortion effect generated by the space charges on the initial field. The relevant physical mechanism effectively allocated PD severity among these features for assessment, and the effectiveness and reliability of using these features to assess PD severity were proved by testing a large number of PD samples.

• Journal of Power Electronics
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• v.15 no.3
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• pp.610-620
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• 2015

An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1385-1393
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• 2014

Gas insulated switchgear (GIS) is widely used in the power systems, however, the contacts overheating of the inside circuit breaker or disconnector may be a potential cause of developing accidents. As the temperature of the contacts cannot be directly acquired due to existence of the metallic shield, an infrared sensor is adopted to directly measure the temperature of the shield and then the contacts temperature can be indirectly obtained by data fitting, based on which the on-line temperature monitoring technology specifically for GIS contacts based on infrared sensing is proposed in this paper. A real GIS test platform is constructed and experimental studies are carried out to account for the influential factors that affect the accuracy of the infrared temperature measurement. A heat transfer model of the GIS module is also developed, together with experimental studies, the nonlinear temperature relationship among the contacts, the metallic shield and the environment based on a neural network algorithm is established. Finally, an integrated on-line temperature monitoring system for the GIS contacts is developed for on-site applications.

• Korean Journal of Food Science and Technology
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• v.26 no.3
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• pp.199-203
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• 1994

Software for refrigerator capable of both rapid fermentation and suitable storage of Kimchi was developed and its performance was investigated. Refrigerator system consists of an insulated fermentation room, heater, damper for the control of outer cold air and two sensors for recognizing temperature of heater and fermentation room, which control temperature and time period of affecting Kimchi fermentation. Effects of fermentation at different NaCl concentration and three fermentation function keys were studied; At key I, time which was elapsed to edible ripening state, pH 4.5 and total acid 0.6%, was about $3{\sim}4$, $4{\sim}5$ and $11{\sim}12$ days, respectively. At key II, time was about $2{\sim}3$, $3{\sim}4$, and $10{\sim}11$ days, and at key III, about 2, 3 and $9{\sim}10$ days, respectively. Effect of storage at three fermentation function keys was all maintained to the level of a palatable pH range until 14 days. Sensory evaluation of Kimchi showed also significant difference in a taste.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.10
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• pp.1011-1019
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• 2015

Insulated-gate bipolar transistors (IGBTs) are the predominantly used power semiconductors for high-current applications, and are used in trains, airplanes, electrical, and hybrid vehicles. IGBT power modules generate a considerable amount of heat from the dissipation of electric power. This heat generation causes several reliability problems and deteriorates the performances of the IGBT devices. Therefore, thermal management is critical for IGBT modules. In particular, realizing a proper thermal design for which the device temperature does not exceed a specified limit has been a key factor in developing IGBT modules. In this study, we investigate the thermal behavior of the 1200 A, 3.3 kV IGBT module package using finite-element numerical simulation. In order to minimize the temperature of IGBT devices, we analyze the effects of various packaging materials and different thickness values on the thermal characteristics of IGBT modules, and we also perform a design-of-experiment (DOE) optimization

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.7-17
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• 2014

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1126-1128
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• 1992

The object of this study is the design of 3 phase on-board inverter. The key point in the inverter design is the selection of switching device, and its performance effects that of total system. In this study, six-step square wave inverter was designed using IGBT ( Insulated Gate Bipolar Transistor ) which has the advantages of MOSFET and bipolar transistor as switching device. The condition of being small and light which is the one of requirements for on-board equipment was accomplished by using IGBT module and optimising the snubber circuit, and the reliablity was increased. It is confirmed that the designed inverter satisfies the required performance through the performance and environment test.