• Journal of Sensor Science and Technology
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• 제23권3호
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• 제2권3호
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• pp.165-174
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• 2004

In order to simultaneously vitrify the ion exchange resin(IER) and combustible dry active waste(DAW) generated from Korean nuclear power plants, a vitrification pilot test was conducted using an induction cold crucible melter(CCM) . The energy necessary for startup of the glass using a Ti-ring was evaluated as about 290 kWh. The power supplied from a high frequency generator to melt the glass properly was ranged from 160 to 190 kW without any interruption. When the mixture of the IER and DAW was fed into the CCM, the concentration of CO was lowered up to 1/40 compared to feeding the IER solely. It may be caused by the DAW which can produce about 1.8 times higher heat compared to the IER. When the swelling phenomenon occurred in the glass melt, the concentration of $NO_2$, oxidizing gas, was higher than NO, reducing gas. Total feed amounts of the IER and DAW were 368 and 751 kg, respectively. And then, about 74 of volume reduction factor was achieved.

• Journal of the Korean Magnetics Society
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• 제9권2호
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제16권4호
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• pp.380-388
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• 2005

This paper presents analysis results of the effects of RF filter characteristics on the system performance of impulse radio. The impulse radio system transmits modulated pulses having very short time duration and information can be extracted in receiver side based on cross-correlation between received and transmitted pulses. Accordingly, the pulse distortion due to in-band group delay variation can cause serious system performance degradation. In general, RF bandpass filters inevitably cause group delay difference to the signal passing through the filter which is proportional to its skirt characteristic due to its resonance phenomenon. For time as well as frequency domain analysis, small signal scattering parameter $S_{21}$ and its Fourier transform are used to characterize output pulse waveform under the condition that the input and output ports are matched. The output pulse waveform of the filter is predicted based on convolution integral between input pulse and filter transfer function, and resulting BER performances in the BPM and PPM based impulse radio system are calculated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.31-35
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• 2003

폴리카보네이트는 내열성과 투명성이 우수한데 비해 내후성이 좋지 않아 황변 및 물성이 저하되고, 내찰상성이 약하여 긁히기 쉬운데다 이물질에 의해 오염되기 쉬워 투명성이 저하되는 문제점이 있다. 이러한 단점을 극복하고, 사용하는 용도에 따라 요구되는 다양한 기능성을 부여하기 위하여 폴리카보네이트 표면에 기능성층을 형성시킴으로써 그 목적을 달성하고자 한다. 본 논문에서는 이온 주입기술을 이용하여, 폴리카보네이트 표면의 전기전도도 특성을 향상시키고, 피부암 및 백내장 등을 유발하는 유해한 자외선 (UV-A, UV-B)을 차단하려 한다. 표면전기전도도의 향상은 이물질로부터 오염되는 정도를 낮추며, 정전기를 방지할 수 있다. PC(Polycarbonate) 표면에 $N^+,\;Ar^+,\;Kr^+,\;Xe^+$ 이온을 에너지 20keV에서 50keV을 사용하여, 주입량 $5{\times}10^{15}\;{\sim}\7{\times}10^{16}\cm^2$ 로 조사하였다. 이온 주입된 PC의 표면을 두 접점 방법의 표면 저항 측정으로 표면전기전도도 특성을 알아보았고, 자외선차단 특성은 UV-Vis 로 분석하였다. 이들 전기적 광학적 특성간의 상관관계를 관찰하고, 이러한 특성을 나타내는 화학적 기능그룹들의 변화를 보기 위해 FTIR 분석법으로 관찰하였다. 이온조사량의 증가에 따라 표면저항은 $10^7{\Omega}/sq$까지 감소하여 표면전기특성을 증가시키며, 자외선 차단 특성은 UV-A를 95%까지 차단하여 인체에 유해한 자외선 차단에 유용함을 확인하였다. 이러한 특성은 PC 표면에 카본 네트워크 형성과 $\pi$전자들의 운동량을 증가시키는 구조로 고분자 사슬들의 결합구조 변형에 의한 것으로 생각된다.블을 가지고 파서를 설계하였다. 파서의 출력으로 AST가 생성되면 번역기는 AST를 탐색하면서 의미적으로 동등한 MSIL 코드를 생성하도록 시스템을 컴파일러 기법을 이용하여 모듈별로 구성하였다.적용하였다.n rate compared with conventional face recognition algorithms. 아니라 실내에서도 발생하고 있었다. 정량한 8개 화합물 각각과 총 휘발성 유기화합물의 스피어만 상관계수는 벤젠을 제외하고는 모두 유의하였다. 이중 톨루엔과 크실렌은 총 휘발성 유기화합물과 좋은 상관성 (톨루엔 0.76, 크실렌, 0.87)을 나타내었다. 이 연구는 톨루엔과 크실렌이 총 휘발성 유기화합물의 좋은 지표를 사용될 있고, 톨루엔, 에틸벤젠, 크실렌 등 많은 휘발성 유기화합물의 발생원은 실외뿐 아니라 실내에도 있음을 나타내고 있다.>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으

• The Korean Journal of Malacology
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• 제26권3호
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• pp.217-225
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• 2010

The total oil proportion of bay scallop by areas during the growing period was the highest (2.8%) at Tongyong in August, then it decreased to 1.88% in September and 0.62% in October, and it was the lowest (0.22%) in November. The total oil proportion of phytoplankton by areas was the highest at Tongyong, where it was decreased from 5.02% in August and 3.29% in September to 2.48% in October and 1.66% in November. For the composition of fatty acid of bay scallop by areas and seasons during the growing period, the major composition was 16:0 and 18:0 as saturated fatty acid, and 16:1n-7, 18:1n-7, 20:1n-9, ARA (20:4n-6), EPA (20:5n-3), DHA (22:6n-3) as monoenic acid. TMTD (4,8,12-trimethyltridecanoic acid) was detected in a little amount as special fatty acid. For the composition of fatty acid of prey by areas during the growing period of bay scallop from August to November 1998, n-3HUFA, Omega-3 highly unsaturated fatty acid, in August was 47.11% at Namhae in slowest growth, while it was distinctively low with 34.26% at Tongyong and 14.06% at Nammeon.

• Toxicological Research
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• 제13권1_2호
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• pp.117-125
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• 1997

In order to assess the possibility whether CYP2D is involved in caffeine metabolism, we have purified and characterized the rat liver microsomal cytochrome P4502D1 (CYP2D1), equivalent to CYP2D6 in human liver, and have utilized the reconstituted CYP2D1 in the metabolism of 4 primary caffeine (1, 3, 7-trimethylxanthine) metabolites such as paraxanthine (1, 7-dimethylxanthine), 1, 3, 7-trimethylurate, theophylline (1, 3-dimethylxanthine) and theobromine (3, 7-dimethylxanthine). Rat liver CYP 2D1 has been purified to a specific content of 8.98 nmole/mg protein (13.4fold purification, 1.5% yield) using $\omega$-aminooctylagarose, hydroxlapatite, and DE52 columns in a sequential manner. As judged from sodium dodecyl sulfate polyacrylamide gel electrophoresis (SDS-PAGE), the purified CYP2D1 was apparently homogeneous. Molecular weight of the purified CYP2D1 was found to be 51, 000 Da. Catalytic activity of the purified and then reconstituted CYP2D1 was confirmed by using bufuralol, a known subsFate of CYP2D1. The reconstituted CYP2D1 was found to produce to 1-hydroxylbufuralol at a rate of 1.43$\pm$0.13 nmol/min/nmol P450. The kinetic analysis of bufuralol hydroxylation indicated that Km and Vmax values were 7.32$\mu M$ and 1.64 nmol/min/nmol P450, respectively. The reconstituted CYP2D1 could catalyze the 7-demethylation of PX to 1-methylxanthine at a rate of 12.5 pmol/min/pmol, and also the 7- and 3- demethylations of 1, 3, 7-trimethylurate to 1, 3-dimethylurate and 1, 7-dimethylurate at 6.5 and 12.8 pmol/min/pmol CYP2D1, respectively. The reconstituted CYP2D1 could also 3-demethylate theophylline to 1-methylxanthine at 5 pmol/min/pmol and hydroxylate the theophylline to 1, 3-dimethylurate at 21.8 pmol/min/pmol CYP2D1. The reconstituted CYP2D1, however, did not metabolize TB at all (detection limits were 0.03 pmol/min/pmol). This study indicated that CYP2D1 is involved in 3-and 7-demethylations of paraxanthine and theophylline and suggested that CYP2D6 (equivalent to CYP2D1 in rat liver) present in human liver may be involved in the secondary metabolism of the primary metabolites of caffeine.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.313-313
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• 2009

OLED 소자는 직접발광, 광시야각, 그리고 빠른 응답속도 때문에 동영상에 적합하여 최근 각광받고 있는 디스플레이장치 중의 하나이다. OLED 소자의 양극재료로는 높은 광투과율과 $\sim10^{-4}{\Omega}\;cm$ 수준의 낮은 전기 비저항을 갖는 ITO (Sn-doped $In_2O_3$)가 널리 사용되고 있다. 하지만 원료 물질인 인듐의 수급량 부족으로 인한 문제점과 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가의 문제점이 있고, 또한 액정디스플레이의 투명전극으로 사용될 경우 $400\;^{\circ}C$정도의 높은 온도와 수소 플라즈마 분위기에서 장시간 노출 시 열화로 인한 광학적 특성변화가 문제가 된다. 반면에 Al이 도핑 된 ZnO (AZO)박막은 넓은 밴드갭 (3.37eV)와 400nm에서 700nm 사이의 가시광 영역에서 80% 이상의 우수한 투과성을 지니고 있다. 특히 Al이 도핑된 ZnO는 박막의 전기적 특성이 크게 향상되어 디스플레이나 태양전지로의 응용이 가능하다. 또한 비교적 낮은 비용과 플라즈마에서의 안정성, 무독성, 그리고 전기전도성과 같은 많은 이점이 있다. 그 결과 AZO 박막은 ITO기판을 대안하는 지원물질로 활발히 연구가 진행되고 있다. 본 연구에서는 TCO 박막의 면 저항과 표면 거칠기에 따른 OLED 소자의 특성을 분석하였다. ITO와 AZO 박막은 챔버 내 다양한 가스 분위기(Ar, Ar+$O_2$ and Ar+$H_2$)에서 R.F Magnetron Sputtering방법으로 증착하였다. TCO 박막의 구조적인 이해를 돕기 위해서 X-ray diffraction 과 FESEM으로 분석하였다. 광학적 투과도와 박막의 두께는 ultraviolet spectrophotometer (Varian, cary-500)와 surface profile measurement system으로 각각 측정하였다. 면저항 charge carrier 농도, 그리고 TCO 박막의 이동도와 같은 전기적특성은 four-point probe와 hall effect measurement(HMS-3000)로 각각 측정하였다. TCO 박막의 표면 거칠기 조절을 위해 photo lithography 공정을 사용하여 TCO 박막을 화학에칭 하였다. 미세사이즈 패턴 마스크가 사용되었으며 에칭의 깊이는 에칭시간에 따라 조절하였다. TCO 박막의 표면 형태는 FESEM과 AFM으로 관찰하였다. 투명전극으로 사용되는 ITO 및 AZO 기판 상용화를 위해 ITO 및 AZO 기판 위에 ${\alpha}$-NPB, Alq3, LiF, Al 의 순서로 증착 및 패터닝함으로써 OLED 소자를 제작하였다. 전류밀도와 전압 그리고 발광휘도와 전압과 같은 전기적 특성은 spectrometer(minolta CS-1000A)를 이용하여 측정하였다.

• Journal of Environmental Science International
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• 제19권12호
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• pp.1323-1334
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• 2010

The effect of nitric oxide (NO) on antioxidant system and protective mechanism against oxidative stress under UV-B radiation was investigated in leaves of maize (Zea mays L.) seedlings during 3 days growth period. UV-B irradiation caused a decrease of leaf biomass including leaf length, width and weight during growth. Application of NO donor, sodium nitroprusside (SNP), significantly alleviated UV-B stress induced growth suppression. NO donor permitted the survival of more green leaf tissue preventing chlorophyll content reduction and of higher quantum yield for photosystem II than in non-treated controls under UV-B stress, suggesting that NO has protective effect on chloroplast membrane in maize leaves. Flavonoids and anthocyanin, UV-B absorbing compounds, were significantly accumulated in the maize leaves upon UV-B exposure. Moreover, the increase of these compounds was intensified in the NO treated seedlings. UV-B treatment resulted in lipid peroxidation and induced accumulation of hydrogen peroxide ($H_2O_2$) in maize leaves, while NO donor prevented UV-B induced increase in the contents of malondialdehyde (MDA) and $H_2O_2$. These results demonstrate that NO serves as antioxidant agent able to scavenge $H_2O_2$ to protect plant cells from oxidative damage. The activities of two antioxidant enzymes that scavenge reactive oxygen species, catalase (CAT) and ascorbate peroxidase (APX) in maize leaves in the presence of NO donor under UV-B stress were higher than those under UV-B stress alone. Application of 2-(4-carboxyphenyl)-4, 4, 5, 5-tetramethylimidazoline-1-oxyl-3- oxide (PTIO), a specific NO scavenger, to the maize leaves arrested NO donor mediated protective effect on leaf growth, photosynthetic pigment and free radical scavenging activity. However, PTIO had little effect on maize leaves under UV-B stress compared with that of UV-B stress alone. $N^{\omega}$-nitro-L-arginine (LNNA), an inhibitor of nitric oxide synthase (NOS), significantly increased $H_2O_2$ and MDA accumulation and decreased antioxidant enzyme activities in maize leaves under UV-B stress. This demonstrates that NOS inhibitor LNNA has opposite effects on oxidative resistance. From these results it is suggested that NO might act as a signal in activating active oxygen scavenging system that protects plants from oxidative stress induced by UV-B radiation and thus confer UV-B tolerance.