• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.294-295
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• 2005

다중 코어를 이용한 대전류 변압기용 Mn-Zn ferrite를 제조하고 전자기적 특성을 분석하였으며, 제조된 자심재료를 이용하여 변압기를 제조하고 전원장치에 탑재하여 효율특성을 분석하였다. ZnO의 몰비가 증가할수록 혼합 스피넬의 형성을 통한 보아 자자의 증가로 인해 투자율은 증가하고 상대적으로 전력손실이 감소하여 $Fe_2O_3$ : MnO : ZnO = 53 : 36 : 11 mo\% 일 때 가장 우수한 특성을 나타냈고, 열처리 공정의 승온 과정에서부터 산소 분압을 제어하고 최적의 대기압 상수를 산출함으로써 Zn-loss 현상을 최소화하여 ZnO 11 mol%, 대기압 상수 7.7일 때 투자율 2350, 밀도 4.9 $g/cm^3$, 비저항 480 ${\Omega}cm$, 300 mT의 최대 자속 밀도 특성을 갖는 우수한 자심 재료를 개발하였다. 그리고 최소 손실 온도를 $90^{\circ}C$ 이하로 감소시켰으며 100 kHz에서 250 $kW/m^3$의 낮은 전력손실을 나타냈다. 또한 개발된 자심재료를 이용하여 제조된 전원장치는 30~80A의 출력 전류에서 85% 이상의 고효율을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.664-671
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• 2017

A composite material was prepared for the bipolar plates of phosphoric acid fuel cells(PAFC) by hot pressing a flake type natural graphite powder as a filler material and a fluorine resin as a binder. Average particle sizes of the powders were 610.3, 401.6, 99.5, and $37.7{\mu}m$. The density of the composite increased from 2.25 to $2.72g/cm^3$ as the graphite size increased from 37.7 to $610.3{\mu}m$. The anisotropy ratio of the composite increased from 1.8 to 490.9 as the graphite size increased. The flexural strength of the composite decreased from 15.60 to 8.94MPa as the graphite size increased. The porosity and the resistivity of the composite showed the same tendencies, and decreased as the graphite size increased. The lowest resistivity and porosity of the composite were $1.99{\times}10^{-3}{\Omega}cm$ and 2.02 %, respectively, when the graphite size was $401.6{\mu}m$. The flexural strength of the composite was 10.3MPa when the graphite size was $401.6{\mu}m$. The lowest resistance to electron mobility was well correlated with the composite with lowest porosity. It was possible the flaky large graphite particles survive after the hot pressing process.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.4
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Progress in Superconductivity and Cryogenics
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• v.10 no.4
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• pp.23-28
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• 2008

As a part of the plasma control system (PCS) for the first plasma campaign of KSTAR, seven sets of fast feedback control loop for the superconducting poloidal field magnet power supply (PF MPS) have been implemented. A special real-time digital communication interface has been developed for the simultaneous exchanges of the current/voltage data from the 7 sets of 12-thyristor power supplies in a 200 microsecond control cycle. Preliminary power supply tests have been performed before actual cooldown of the device. A $29mH/50m{\Omega}$ solenoid dummy has been fabricated for a series of single power supply tests. Connectivity and response speed of the plasma control system have been verified. By changing hardware cabling, this load was also used to estimate mutual inductance coupling effects of two geometrically adjacent solenoid coils on each power supply. After the cooldown was complete, each pair of the up/down symmetric PF coils has been serially connected and tested as part of the device commissioning process. Bipolar operation and longer pulse attempts have been investigated. The responses of the coils and power supplies corresponding to the plasma magnetic controls in plasma discharges are also analyzed for the future upgrades.

• Tuberculosis and Respiratory Diseases
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• v.43 no.3
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• pp.420-433
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• 1996

Background : There have been many debates about the effects of nitric oxide on the neurogenic inflammation. The role of nitric oxide in the neurogenic inflammation of airways will be required a better understanding of the localization and types of nitirc oxide synthase(NOS) activity in the neurogenic inflammation of airways. Method : To investigate the role of nitric oxide in airway neurogenic inflammation, 1) the effects of neurokinin receptor antagonist (FK224) and nitric oxide synthase inhibitor, $N^{\omega}$-nitro-L-arginine (L-NNA) on plasma extravastion were evaluated in four groups of Sprague-Dawley rats ; sham operation group(sham NANC group), electrical vagal stimulation group(NANC2 group), intravenous pretreatment groups with FK224 (1mg/kg ; FK224 group), and L-NNA(1mg/kg ; L-NNA group) 15 minutes before vagal NANC stimulation. 2) NOS activity in trachea with neurogenic inflammation was localized by immunohistochemical stain. Immunohistochemical stain was performed by antibodies specific for inflammatory cells(iNOS), brain(bNOS), and endothelium (eNOS) on trachea obtained from sham NANC, NANC2, and FK224 groups. Results : The results are that plasma extravsation in neurogenic inflammation of rat airways was inhibited by FK224, but enhanced by L-NNA pretreatment(P<0.05). There was significantly increased infiltration of inflammatory cells in subepithelium of neurogenic inflammatory trachea, but the reduction of subepithelial infiltration of inflammatory cells was observed after pretreatment with FK224(P<0.05). Immunostaining with anti-iNOS antibody showed strong reactivity only in infiltrated inflammatory cells in neurogenic rat trachea, and these iNOS reactivity was reduced by pretreatment with FK224. bNOS immunoreactivity was significantly increased only in the nerves both of neurogenic inflammatory and FK224 pretreated trachea compared with sham NANC trachea(p<0.05). eNOS immunoreactivity was not significant change in endothelium in neurogenic inflammation of rat trachea. Conclusion : These results suggest that nitric oxide released from iNOS in infiltrated inflammatory cells has main role in neurogenic inflammation of rat trachea. The presence of bNOS immunoreactivity in the nerves indicates that nitric oxide may be released from the nerves in rat trachea with neurogenic inflammation.