• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.544-549
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• 2015

Since LEDs (light emitting diodes) have many advantages as a light source in vehicle headlamp, such as good reliability, energy and space saving, and flexible headlamp design. On the other hand, the dependence of its performance and life on temperature have great influence on its practical use. In this study, design and fabrication of heat sink for vehicle LED headlamp were performed using thermally-conductive plastics. This study focused on the effective heat sink structure with limited space in the vehicle LED headlamp. We designed two different prototype of heat sink by thermal simulation using SolidWorks program, which had excellent temperature characteristics. The two different prototype of heat sink were fabricated by injection molding with thermally-conductive plastics. The results showed that LED $T_j$ (junction temperature) of sample B (model 1) and sample C (model 1, 2) was below then $165^{\circ}C$ when applying the thermally-conductive plastics in heat sink of vehicle LED headlamp.

• 한국재료학회지
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• 제11권10호
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• 전기학회논문지
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• 제57권9호
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• pp.1606-1611
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• 2008

Recently, The diagnosis techniques of electric facilities are developed on live line. This paper describes the discharge characteristics of polymer insulator(EPDM A type). Keeping the facilities in good working order, the goal of this paper will provide the information to enable user to easily judge conditions of facilities on the spot. The performance of polymer insulator is assessed from the KS C IEC 60270 and CEA LWIWG-01(96)(Tracking Wheel Test). As the results, UV generation patterns of polymer insulator grow like a jellyfish shape follow the ramping voltage. Discharging UVs are detected at about 31.25% of breakdown voltage. Just then, dimension of UV image is about $0.84cm^{2}$. The dimension of max. UV image is about $297.4cm^{2}$ at $160kV(V_{bd})$. The position of UV generation due to surface discharge of polymer insulator is the center of insulator in the early, then moved the ground side and the last, UV image moved through the junction part of source side. Surface of aged polymer insulator is cracked and faded due to arc. UV absorption spectrum of polymer insulator are appeared the C-H bond of scissoring vib. at $1014cm^{-1}$ and C=O bond of recombination structure. Also, recombined UV absorption peak such as C-H, N-H, and O-H is detected at the $3321cm^{-1}$. Through the paper, there are inspection data which are the relations between surface discharge of polymer insulator and UV detecting image.

• 한국산학기술학회논문지
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• 제15권3호
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• pp.1764-1769
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• 2014

본 논문에서는 기존의 단일대형강관 타워의 일부를 복수의 강관으로 대체한 멀티기둥-단일대형강관 하이브리드형식 풍력타워의 적용성을 평가하기 위하여 연결부의 성능을 수치해석적으로 평가하였다. 연결부의 형태는 멀티기둥의 단일대형강관 단부 관통 여부, 멀티기둥 하단부 날개 보강재의 유무 및 단일대형강관 내부 가로보 배치형식으로 구분하였다. 해석은 응력집중을 평가하기 위한 선형탄성해석과 극한강도을 평가하기 위한 재료 및 기하비선형 해석이 수행되었다. 수직력과 수평력에 대한 구조성능 분석 결과, 가로보 배치형식과 날개 보강재는 타워 구조계의 극한강도에 민감하게 영향을 주는 것으로 확인되었다.

• 한국표면공학회지
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• 제29권6호
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• 센서학회지
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• 제24권1호
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.28-29
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• 2000

Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)

• 센서학회지
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• 제5권1호
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• pp.57-62
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• 1996

하이퍼어브��트 접합구조의 $p^{+}n$ 다이오드의 누설전류를 감소시키기 위하여 $3000{\AA}$ 두께의 다결정 실리콘을 다이오드의 상층부에 증착하여 $900^{\circ}C$, $N_{2}$ 분위기에서 30분간 어닐링하였다. 다결정 실리콘 유무 및 n 확산층의 불순물 종류에 따른 다이오드의 누설전류 특성을 조사하였으며, 다결정 실리콘을 사용하였을 때 누설전류의 크기를 약 $\frac{1}{1000}$배 감소시킬 수 있었다. TEM 분석을 통하여 활성화 영역에 존재하였던 많은 전위 루프들이 그 표면 위에 다결정 실리콘을 사용함으로써 제거됨을 알 수 있었다. 그리고 이 결함들은 As의 이온주입에 의한 n 확산층에 의해 유발됨을 알 수 있었다.

• Journal of Crop Science and Biotechnology
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• 제11권4호
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• pp.237-242
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• 2008

A liguleless mutant, which showed complete loss of lamina joint region at the junction between leaf blade and leaf sheath, was isolated from a Ds insertional mutants derived from the source cultivar, Dongjin. This mutant could not affect other developmental patterns like phyllotaxis. Southern blot analysis, using GUS as a probe, revealed that the liguleless mutant contained three Ds copies transposed in the rice genome. Among the four genomic sequences flanking the Ds, one was mapped in the intergenic region (31661640 - 31661759), and the other two predicted a protein kinase domain (12098980 - 12098667) as an original insertion site within a starter line used for massive production of Ds insertional mutant lines. Another predicted and inserted in first exon of liguleless 1 protein (OsLG1) that was mapped in coding region (LOC_Os04g56170) of chromosome 4. RT-PCR revealed that the OsLG1 gene was not expressed liguleless mutants. Structure analysis of OsLG1 protein revealed that it predicted transcription factor with a highly conserved SBP domain consisting of 79 amino acids that overlapped a nuclear localization signal (NLS). RT-PCR revealed that OsLG1 is mainly expressed in vegetative organs.

• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.