• Current Optics and Photonics
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• v.3 no.6
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• pp.502-509
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• 2019

Based on the typical pixel structure and parameters of a polysilicon uncooled bolometer, the absorption rate of a polysilicon microbridge infrared detector for 10.6 ㎛ laser energy was calculated through the optical admittance method, and the thermal coupling model of a polysilicon microbridge component irradiated by far infrared laser was established based on theoretical formulas. Then a numerical simulation study was carried out by means of finite element analysis for the actual working environment. It was found that the maximum temperature and maximum stress of the microbridge component are approximately exponentially changing with the laser power of the irradiation respectively and that they increase monotonically. The highest temperature zone of the model is gradually spread by the two corners of the bridge surface that are not connected to the bridge legs, and the maximum stress acts on both sides of the junction of the microbridge legs and the substrate. The mechanism of laser-induced hard damage to polysilicon detectors is the melting damage caused by high temperature. This paper lays the foundation for the subsequent study of the interference mechanism of the laser on working state polysilicon detectors.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.348-351
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• 1995

A modified silicon direct bonding method has been developed alloying an intimate contact between grooved and smooth mirror-polished oxide-free silicon wafers. A regular set of grooves was formed during preparation of heavily doped $p^+$-type grid network by oxide-masking und boron diffusion. Void-free bonded interfaces with filing of the grooves were observed by x-ray diffraction topography, infrared, optical. and scanning electron microscope techniques. The presence of regularly formed grooves in bending plane results in the substantial decrease of dislocation over large areas near the interface. Moreover two strongly misoriented waters could be successfully bonded by new technique. Diodes with bonded a pn-junction yielded a value of the ideality factor n about 1.5 and the uniform distribution of series resistance over the whole area of horded pn-structure. The suitability of the modified technique was confirmed by I - V characteristics of power diodes and reversly switched-on dynistor(RSD) with a working area about $12cm^2$. Both devices demonstrated breakdown voltages close to the calculation values.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.379-381
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• 2011

Direct numerical simulations (DNSs) of spatially developing turbulent boundary layers (TBLs) over two-dimensional (2-D) and rod and three-dimensional (3-D) cube rough walls were performed to investigate the effects of streamwise spacing on the properties of the TBL The 2-D and 3-D roughness were periodically arranged in the downstream direction with pitches of px/k=2, 3, 4, 6, 8 and 10 and for the cube, the spanwise spacing is fixed to pz/k=2 with staggered array, where px and pz are the streamwise and spanwise spacings of the roughness and k is the roughness height. Inspection of the Reynolds stresses showed that except for px/k=2 and 3 over the 2-D rough walls, the effects of the surface roughness extend to the outer layer over the 2-D and 3-D rough walls and the magnitude of the Reynolds shear stress in the outer layer is increased with proportion to px/k. However, such results are contrary to the trends of form drag, roughness junction and roughness length against px/k, which showed the maximum values at px/k=8 and 4 over the 2-D and 3-D rough walls respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2065-2071
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• 2011

The external quality factor ($Q_e$) is controlled by coupling condition between resonator and input/output ports in design of microwave filter. In this paper, we represent extracting method of external quality factor using phase response for resonator with input/output ports according to position of feed line from microstrip line resonator. The results regarding to position, coupling gap and line width for tapped line and coupled line structure are represented, and we got the exact $Q_e$ value from the this method. This results will be applied to coupled resonator filter design.

• Applied Microscopy
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• v.1 no.1
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• pp.19-26
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• 1969

Electron microscopy on the skin of young frogs, Rana temporaria, has been carried out with particular reference to cellular attachment sites. For the first time now several technical developments allow a more detailed visualization of the fine structure within the cellular attachment sites as well as making it possible to show the ultra-structural morphology of the junctional complexes, and to demonstrate that the desmosomes are regularly distributed aroand each skin cell, especially in the S. granulosum. The relations of these findings to these of previous investigations concerning the functional, organization of the junctional complexes and to the findings in skin cancer from a cellular adhesion view point have been briefly discussed.

• The Journal of the Korean dental association
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• v.19 no.7 s.146
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• pp.625-634
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• 1981

A Scanning Electron Microscopic Study of the root surface changes was carried out in advanced periodontal disease. The results obtained were summerized as follow; 1. The root surface of cementoenamel junction of healthy root showed smooth surface, while the root surface of diseased state showed covering of deposits which regareded as a course of calcification. 2. At the mid-portion of the root, the regular cemental projection were observed on the healthy root surface and on the root surface of diseased state, cemental projection showed relatively irregular pattern. 3. On the root surface which consist of wall of periodontal pocket, there were various deposits which could be considered as subgingival calculus, bacterial plaque and epithelial attachment remnant. 4. The bottom area of the pathologic pocket, tearing altered collagen fibers were seen on the root surface. 5. At the apical portion of root surface, calcified fibers ran parallel to the root surface in healthy tooth and the fiber bundles of periodontal ligament were seen in the diseased state.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.