• Title/Summary/Keyword: junction structure

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Converter Simulation by the Micro Modeling and Macro Modeling of GTO Thyristor (GTO 다이리스터의 미시적 모델링과 거시적 모델링에 의한 변환기 시뮬레이션)

  • Seo, Young-Soo;Baek, Dong-Hyun;Kim, Young-Chun;Cho, Moon-Taek;Seo, Soo-Ho
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.781-783
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    • 1993
  • The GTO model is based on the Ebers-Moll equation extened to include the three-junction devices and a detailed description of the implementation of the model equation as well as defferent tests are discussed. Problems to be considered for the snubber design, such as voltage spike reduction, maximum GTO anode current, and switching power, were discussed using the calculation model. The macro model is very useful for simulation of GTO circuit and high power circuit switch in high frequency and complex structure.

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Analysis of Waveguide Junction in H-Plane Using Finite Element-Boundary Element Method (혼합 유한요소법을 사용한 H평면의 도파관 접합 해석)

  • Jung, Jin-Kyo;Cheon, Chang-Yul;Jung, Hyun-Kyo;Hahn, Song-Yop
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.663-665
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    • 1993
  • An H-Plane waveguide component with arbitrary shape is analyzed using finite element technique(FEM) cooperated with boundary element method(BEM). For the application of BEM in the waveguide structure, a hybrid ray-mode representation of the waveguide Green's function is used. This technique is applied to the waveguide step load and the computed results are compared with the earlier theoretical results.

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Characterization of Superconducting Multi-layer Thin Films (초전도 다층박막의 특성 해석)

  • 이현수;한태희;임성훈;고석철;두호익;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.243-246
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    • 2000
  • The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

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The n-p-n-p layer stacked color detector for CMOS image sensor (CMOS 이미지 센서용 n-p-n-p 적층형 색 검출기)

  • Song, Young-Sun;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.72-73
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    • 2005
  • In this paper, the simulation of the n-p-n-p layer stacked color detector is presented. A color detector based on vertically integrated structures of silicon can overcome color moire or color aliasing effect. The color detector is designed to separate the fundamental chromatic components at each junction and exhibits maxima of the spectral sensitivity at red, green, and blue region, respectively. From this result, it is observed that the spectral response can be controlled by the doping concentration and structure of the devices.

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Dielectric Characteristics of Magnetic Tunnel Junction

  • Kim, Hong-Seog
    • The Journal of Engineering Research
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    • v.6 no.2
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    • pp.33-38
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    • 2004
  • To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

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Modeling of an isolated intersection using Petri Network

  • 김성호
    • Journal of Korean Society of Transportation
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    • v.12 no.3
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    • pp.49-64
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    • 1994
  • The development of a mathematical modular framework based on Petri Network theory to model a traffic network is the subject of this paper. Traffic intersections are the primitive elements of a transportation network and are characterized as event driven and asynchronous systems. Petri network have been utilized to model these discrete event systems; further analysis of their structure can reveal information relevant to the concurrency, parallelism, synchronization, and deadlock avoidance issuse. The Petri-net based model of a generic traffic junction is presented. These modular networks are effective in synchronizing their components and can be used for modeling purposes of an asynchronous large scale transportation system. The derived model is suitable for simulations on a multiprocessor computer since its program execution safety is secured. The software pseudocode for simulating a transportation network model on a multiprocessor system is presented.

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TOF-MEIS System을 이용한 Ultra Thin Film 및 Composition and the Core/Shell Structure of Quantum Dot 분석

  • Jeong, Gang-Won;Kim, Jae-Yeong;Mun, Dae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.284-284
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    • 2013
  • 중 에너지 이온 산란 분석법(Medium Energy Ion Scattering Spectrometer, MEIS)은 50~500 keV로 이온을 가속 후 시료에 입사시켜 시료의 원자와 핵간 충돌로 산란되는 일차이온의 에너지를 측정하여 시료를 분석하는 기법으로, 원자층의 깊이 분해능으로 초박막의 표면 계면의 조성과 구조를 분석 할수 있는 유용한 미세 분석기술이다. 본 실험에서 에너지 70~100 keV의 He+ 이온을 사용하여 Pulse Width 1 ns의 Pulsed ion beam을 만들어 Start 신호로 사용하고 Delay-line-detector에 검출된 신호를 End 신호를 이용한 TOF-MEIS System을 개발하였다. 활용 가능한 분석시편으로 Ultra thin film 시편으로 1, 1.5, 2, 2.5, 3, 4 nm의 HfO2, 1.8, 4nm의 SiO2 시편을 분석 하였으며 Ultra Shallow Junction 시편으로 As Doped Si, Cs Doped Si 시편 및 Composition, Core/shell 구조의 Q-dot 시편으로 CdSe, CdSe/ZnS등 다양한 분석 실험을 진행 하였다. Composition, Core/shell 구조의 Q-dot 시편은 Diamond Like Carbon(DLC)의 Substrate에 Mono-layer로 형성하여 분석하였다.

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Topological Analysis on the Dispersion Polymerization of Styrene in Ethanol

  • 손정모;박형석
    • Bulletin of the Korean Chemical Society
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    • v.17 no.3
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    • pp.245-253
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    • 1996
  • A topological theory has been introduced to explain and evaluate the fractional volumes of system materials, the change of the weight and concentration of monomer molecules, molecular weight distribution, and interaction functions of polymer-polymer and polymer-oligomer, etc. for dispersion polymerization. The previous theory of Lu et al. has offered only an incomplete simulation model for dispersion polymer systems, whereas our present one gives a general theoretical model applicable to all the polymerization systems. The theory of Lu et al. considered only the physical property term caused by interaction between matters of low molecular weight (i.e., diluent, monomer, and oligomer) and polymer particles without dealing with physical properties caused by the structure of polymer networks in polymer particles, while our theory deals with all physical effect possible, caused by the displacement of not only entangled points but also junction points in polymer particles. The theoretically predictive values show good agreement with the experimental data for dispersion polymerization systems.

A New Gate Driver Technique for Voltage Balancing in Series-Connected Switching Devices (직렬 연결된 SiC MOSFET의 전압 평형을 위한 새로운 능동 게이트 구동 기법)

  • Son, Myeong-Su;Cho, Young-Hoon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.1
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    • pp.9-17
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    • 2022
  • The series-connected semiconductor devices structure is one way to achieve a high voltage rating. However, a problem with voltage imbalance exists in which different voltages are applied to the series-connected switches. This paper proposed a new voltage balancing technique that controls the turn-off delay time of the switch by adding one bipolar junction transistor to the gate turn-off path. The validity of the proposed method is proved through simulation and experiment. The proposed active gate driver not only enables voltage balancing across a variety of current ranges but also has a greater voltage balancing performance compared with conventional RC snubber methods.

Structure and Function of Tight Junctions in the Skin (피부에서의 치밀이음의 구조와 기능)

  • Song, Mee;Baek, Ji Hwoon
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.48 no.2
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    • pp.181-188
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    • 2022
  • The skin protects the body from excessive water loss and the invasion of harmful substances, such as chemicals and microbes. The stratum corneum, is recognized as a very important physical barrier. However, in recent years evidence emerged that tight junctions (TJ) might also play a crucial role in barrier function of the skin. In the present study, TJ proteins including transmembrane proteins and plaque proteins, skin permeability barrier function and skin diseases of TJ were reviewed.