• Title/Summary/Keyword: junction burnout

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A Study on Radiation-Shielded Electronics Technology Survey (우주방사선차폐 전자공학기술조사 연구)

  • Hwang, Sun-Tae;Hah, Suck-Ho
    • Journal of Radiation Protection and Research
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    • v.26 no.1
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    • pp.45-49
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    • 2001
  • 오늘 날 인공위성을 이용하는 통신, 방송, 기상, 환경모니터링 및 원격탐사 등이 각광을 받고 있는 때에 위성에 설치되는 수많은 전자제품 및 부품들의 우주방사선에 대한 내구성이 매우 중요한 문제로 제기되고 있다. 이러한 관점에서 국내에서는 아직 확보할 수 없는 우주방사선차폐 전자공학기술에 관한 정보자료를 조사 수집하여 기술적으로 직접 활용해야할 필요성이 시급하게 대두되고 있다. 따라서 선진국에서 개발된 우주방사선차폐를 위한 첨단전자공학기술에 관한 기술정보 자료를 체계적으로 서술한다.

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Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.37-43
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    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

A Study of the Comparison of Microleakage according to the Types of Cement on the Cast Post and Core (주조 포스트코아에서 시멘트 종류가 미세누출에 미치는 영향)

  • Nam, Ki-Young;Lee, Cheong-Hee;Cho, Kwang-Hyun
    • Journal of Dental Rehabilitation and Applied Science
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    • v.16 no.1
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    • pp.51-60
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    • 2000
  • The purpose of this study was to compare the microleakage at the interface of cast post and tooth according to the type of cement. Forty anterior teeth with single root were used. The teeth were cut 2 mm coronal from the cementoeamel junction and chamfer finish line was made on 1 mm coronal from the cementoeamel junction. After the routine endodontic treatment, post space was prepared using #5.5 Parapost drill to a depth of 7 mm. After the pick up impression, core building was made to 3 mm of clinical crown with burnout wax, then post and core was cast with nonprecious metal. The teeth were divided into four groups of ten each. In Group I, post and core were cemented with Fleck's(Zinc phosphate cement) In Group II, post and core were cemented with Fuji I(Glass ionomer cement) In Group III, post and core were cemented with Superbond C & B(Composite resin cement) In Group IV, post and core were cemented with Panavia 21(Composite resin cement) All cemented teeth were stored in normal saline at $37^{\circ}C$ for 7 days and thermocycled from $5^{\circ}C$ to $55^{\circ}C$ for 500 cycles with a dwell time of 30 seconds. After thermocycling, teeth were immersed in 1% Basic fuchsin dye for 48 hours. All 40 teeth were then embedded in the epoxy resin and cut buccolingually with a cutting instrument. The degree of penetration of dye at interface was graded on a scale of 0 to 4 using a stereomicroscope at 25 to 40 times magnification. Through the findings of this study, the following conclusion were obtained. 1. All the groups showed the microleakage at the interface of cast post core and tooth. 2. Group I showed the highest microleakage score among the groups with a significant difference(p<0.05). 3. Group II showed higher microleakage score than Group III and Group IV with a significant difference(p<0.05). 4. Group IV showed the lowest microleakage score but there were no significant difference with Group III(p>0.05).

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