• Progress in Superconductivity
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• 제13권1호
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• pp.47-51
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• 2011

Mono-atomic-layer graphene is an interesting system for studying the relativistic carrier transport arising from a linear energy-momentum dispersion relation. An easy control of the carrier density in graphene by applying an external gate field makes the system even more useful. In this study, we measured the Josephson current in a device consisting of mono-layer graphene sheet sandwiched between two closely spaced (~300 nm) aluminum superconducting electrodes. Gate dependence of the supercurrent in graphene Josephson junction follows the gate dependence of the normal-state conductance. The gate-tunable and relatively large supercurrent in a graphene Josephson junction would facilitate our understanding on the weak-link behavior in a superconducting-normal metal-superconducting (SNS) type Josephson junction.

• Progress in Superconductivity
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• 제10권2호
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• pp.144-148
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• 2009

A current limiter was manufactured using a Josephson junction array to cut off an excessive current flowing into the SQUID sensor. The Fabricateed Josephson junction array was connected in series with a flux transformer that consists of a pick-up coil and an input coil, and the flux transformer was inductively coupled with a Double Relaxation Oscillation SQUID(DROS). The flux-voltage modulation curve was induced by applying an AC magnetic field whose magnitude was far smaller than that of the DC magnetic field. A change in the flux-voltage modulation curve of the SQUID was observed while the DC magnetic field was increased, to qualitatively examine the current limiting characteristic of the Josephson junction array. As a result, it was found that the SQUID flux-voltage modulation curve disappeared at the critical current of the Josephson junction array, which indicates that the Josephson junction array properly works as a current limiter.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.45-45
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• 2003

• Progress in Superconductivity
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• 제7권1호
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• pp.11-16
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• 2005

Coupling of non-linear oscillators have long been an interesting problem for physicists. The coupling phenomena have been frequently observed in Josephson junction series array, which have been used for Josephson voltage standard. Interestingly pronounced self-generation effect has been found during recent development of Josephson arrays for programmable Josephson voltage standard. But the coupling effect between the self-generations is not fully understood yet. We present harmonically approximated analytical solutions for coupled self-generations in the Josephson arrays, i.e., Superconductor-Insulator-Normal metal-Insulator-Superconductor (SINIS) array, externally shunted Superconductor-Insulator-Supercondctor (es-SIS) array, Superconductor-Normal metal-Superconductor (SNS) array. We find that the coupling between the self-generated Josephson oscillations through microwave transmission line plays critical role in microwave property of the Josephson array.

• 대한수학회보
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• 제50권5호
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• pp.1441-1450
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• 2013

In this paper, we consider two-component Bose-Einstein condensates with an internal atomic Josephson junction in the general case, i.e., 0 < p < $\frac{2}{(d-2)^+}$. We prove existence and uniqueness results for the ground states, and obtain some properties of the ground states with large parameters.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.49-49
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• 2002

• Progress in Superconductivity
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• 제12권2호
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• pp.114-117
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• 2011

We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1402-1404
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• 2001

Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

• Progress in Superconductivity
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• 제3권1호
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• pp.74-77
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• 2001

We have fabricated a high-Tc superconductive transistor with polyvinylidene fluoride (PVDF) gate electrode on MgO bicrystal Josephson junction by spin-coating method. The PVDF ferroelectric film is found to be suitable fur a gate electrode of the superconductive transistor since it has not only small leakage current but also high dieletric constant at low temperature. For the application of superconducting-FET, we investigated millimeter wave properties (60 GHz band) of the Josephson junction with PVDF gate electrode.

• Progress in Superconductivity
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• 제3권1호
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• pp.49-55
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• 2001

Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.