• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1293-1301
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• 2018

The basic magnetic properties of commercially available High-$T_c$ Superconductor (HTS) GdBCO-coated conductor (GdBCO-CCs) were investigated by using physical property measurement system-vibrating sample magnetometer (PPMS-VSM). From the zero-field-cooled (ZFC) m(T) curve, the $T_c$ was found to be ~93 K. After removing the background m(H) data, we obtained both the net m(H) data and the ${\Delta}m_{irr}$. The $H_{irr}(T)$ coincided very well with the power-law relation $H_{irr}=H_{irr}(0)(1-T/T_c)^n$ with $$n{\sim_=}1.19$$. The magnetic flux behavior was investigated by using the ${\delta}$ values in the relationship $J_c{\propto}{\Delta}m_{irr}{\propto}H^{-{\delta}}$. A ${\delta}{\approx}0$ region denoting an independent magnetic flux pinning effect, a ${\delta}{\approx}0.6{\sim}1.2$ region representing a collective flux pinning effect due to the interaction, and a ${\delta}{\gg}2$ region representing freely moving magnetic fluxes caused by the Lorentz force were observed. The boundary line between ${\delta}{\approx}0$ and ${\delta}{\approx}0.6{\sim}1.2$ is denoted by a $H_1$, and the one between ${\delta}{\approx}0.6{\sim}1.2$ and ${\delta}{\gg}2$ is denoted by a $H_2$. The ${\delta}(T)$ was obtained in the region of $H_1$ < H < $H_2$. As the temperature was decreased, the ${\delta}$ value gradually decreased.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.