• Resources Recycling
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• v.11 no.5
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• pp.7-10
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• 2002

Iron nitride magnetic fluid was oxidized by exposing it to the air under normal atmospheric conditions. After exposure of 3.2 hours, the relative saturation magnetization of the iron nitride magnetic fluid is less than 0.4 compared to the value of the unexposed sample, and it is nearly zero after exposure for 1008 hours. The structure of the oxidized iron nitride is considered to be a non-magnetic hematites. The thickness of the oxidation layers of the iron-nitride particles are nearly the same, about 3 nm, regardless of the different particle sizes.

• Journal of Surface Science and Engineering
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• v.44 no.3
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• pp.75-81
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• 2011

Growth behaviors of iron-nitride on S45C steels at low pressure gas nitriding were examined. Surfaces of the steels covered with fine and porous oxide during the pre-oxidation using $N_2O$ gas. Well faceted particles connected with them were observed after 1 min nitriding. They grew steadily and filled inter-pores during additional nitriding process. From the X-ray diffraction analysis, ${\gamma}'$-iron nitride was dominantly formed at the initial stage but the amount of ${\varepsilon}$-iron nitride was rapidly increased as nitriding treatment time. The porous layer was formed on the particles and thickened up to half of nitride layer after 60 min nitriding. The observed growth behaviors were discussed in internal stress related with volume expansion involved in transforming from iron to iron-nitrides.

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.90-91
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• 1996

• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.90-91
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• 1992

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.312-316
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• 1999

The interfacial structure of duplex treated AISI 4140 consisting of iron nitride and TiN layer was characterized by optical microscope, SEM and XRD. A black layer was formed from the decomposition of iron nitride during Ti ion bombardment. The black layer was characterized as an a-Fe phase transformed from the iron nitride by XRD. In order to identify the formation mechanism of the black layer, a thermal analysis of iron nitride undertaken by DSC method. As an iron nitride was mostly consisted of ${\gamma}$'-Fe$_4$N and $\varepsilon$-$Fe_3$N phase after plasma nitriding, in this study, a ${\gamma}$'$-Fe_4$N and $\varepsilon$-$Fe_3$N powders were separately prepared by the different processing conditions of gas nitriding of iron powder in the fluidized bed. From the DSC thermal analysis, the phase transformation of ${\gamma}$'$-Fe_4$N, $\varepsilon$-$Fe_3$N was followed the path of transformation; $ \Upsilon{'}-Fe_4$Nlongrightarrow${\gamma}$-Felongrightarrowa-Fe and of $\varepsilon$-$Fe_3$Nlongrightarrow$\varepsilon$-$Fe_{2.5}$ /N+${\gamma}$'$-Fe_4$Nlongrightarrow${\gamma}$'-Fe$_4$Nlongrightarrow${\gamma}$longrightarrowFelongrightarrowalongrightarrowFe, respectively. It explains the reason why the $\varepsilon$ $-Fe_3$N phase disappeared in the first time and then ${\gamma}$'-Fe$_4$N in the formation of the black layer in the duplex coating.

• 연구논문집
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• s.28
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• pp.219-227
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• 1998

In order to investigate the interfacial structure between TiN and iron nitride, an AISI 4140 steel was nitrided to form a layer of thickness 15$\mum$ by DC ion nitriding, then the surface was bombarded with Ti ions and subsequently coated a TiN film of 5$\mum$ by arc ion plating method. The interfacial microstructure between TiN and iron nitride was characterized by optical microscope, SEM and XRD. So called black layer was observed in the duplex treatment. It was resulted from the decomposition of iron nitride during the bombardment. Its thickness was increased with increasing bombardment time at high bias voltage. But the thickness was greatly decreased when the iron nitride was bombarded with a nitrogen gas or at a reduced bias voltage. The adhesion strength of the top TiN coating was decreased with increasing thickness of the black layer. Furthermore, the reduced adhesion strength in this system was discussed in view of the interfacial structural relationship between TiN and iron nitride.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.85-91
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• 2006

The fraction of $\varepsilon\;and\;\gamma$'-iron nitride in compound layer is predicted by x-ray diffraction using direct comparison method. The validity of formulation models was checked by comparing calculated results with metallographic analysis of iron nitride compound layer grown on steel S45C by gas nitriding. The fraction of $\varepsilon$ calculated by the three phase model, porous-$Fe_3N$/ dense-$Fe_3N$/ mixed layer with $Fe_3N\;and\;Fe_4N$, is 80 percent of that analyzed by etching technique. The $\varepsilon$ fraction predicted by mixed layer model is 122 percent of that measured by microscope.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.861-862
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• 2006

The suitable tools for CGI material has not been developed yet because of high hardness, high toughness and very low machininability compared to the grey cast iron. And the tool life has been decreased as the contents of Ti in CGI material. From this research, we were able to do the high speed machining by using high toughness silicon nitride ceramic tools. The silicon nitride ceramic tool grade was specially designed and prepared with microstructure of elongated grains with higher aspect ratio (c/a) than conventional one.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.244-250
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• 1992

Iron nitride $Fe_4N$ by partial substitution of nitrogen by carbon was prepared by nitriding the iron oxalate whose thermal decomposition gives a carburating atmosphere. Iron oxalates, the precursors, were prepared by precipitation and co-precipitation. The size and shape of the carbonitride particles could be controlled by modifying the conditions of preparation of the oxalate precursor. From the results of electron micrographs, it is clear that the $Fe_4N$ pigment particle maintains the original shape(needle shape) of the starting materials and that it consists of fine unit particles which link together to form a stereo-network structure. An investigation of the $Fe^{II}_3\;Fe^I_{1-x}\;Sn_xN_{1-y}C_y$ solid solution has shown that Sn plays the role of a growth inhibitor of the elementary microcrystallites of the iron carbonitride. The coercive force and saturation magnetization of iron carbonitride obtained from co-precipitated iron oxalate were 500 Oe and 120 emu/g, respectively.