• Title/Summary/Keyword: ionic liquid crystal

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RETINOL STABILIZATION BY PSEUDO-LIPOSOME AND LAMELLAR LIQUID CRYSTAL

  • Lee, Seung-Ji;Jo, Byoung-Kee;Lee, Young-Jin;Ryu, Chang-Suk;Kim, Beom-Jun;Suk, Chang-Hyun
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.24 no.3
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    • pp.116-122
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    • 1998
  • It is well known that all-trans-retinol is not only very unstable in heat, light, air, and water, but also skin-irritant despite a good anti-wrinkle effect. Therefore, it is very difficult to stabilize retinol and make the safe retinol containing cosmetics by using a certain concentration of retinol with real effect. In order to dissolve these problems and apply retinol for skin care cream, firstly retinol is to be encapsulated in the vesicle called Liposphere (pseudo-liposome) which is made by homogenizing under high pressure the mixtures of lecithin, retinol, caprylic/capric triglyceride, and hydroalcoholic solution ; and then this retinol containing Liposphere is to be intercalated in lamellar liquid crystal layer which is prepared by emulsifying in an optimal ratio the mixtures composed of non-ionic emulsifier (cetearyl glucoside, sorbitan stearate & sucrose cocoate etc), cetearyl alcohol, stearic acid, cholesterol, and ceramide. In addition, the stability of the retinol containing oil in water cream by adding the polymeric emulsifier such as acrylate /C10-30 alkyl alkylate crosspolymer is to be ensured even at 55 C. Retinol containing oil in water cream prepared through above procedure could be very stable at 45 C for at least 50 days. The structure identification of lamellar liquid crystal was determined using polarized light microscope and electron microscope Conclusively, we could make the very stable retinol containing oil in water cream by triple procedure, that is, encapsulation of retinol in Liposphere, intercalation of retinol in lamellar liquid crystal layer, and assurance of the high temperature stability of cream even at 55 C.

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Operating Parameters for Glutamic Acid Crystallization in Displacement Ion Exchange Chromatography

  • Lee, Kisay
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.2 no.2
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    • pp.117-121
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    • 1997
  • Glutamic acid can be crystallized inside cation exchange column when displacer NaOH concentration is high enough to concentrate displaced glutamic acid beyond its solubility limit. Resulting crystal layer of glutamic acid was moved with liquid phase through the column, and thus could be eluted from the column and recovered in fraction collector. For the purpose of enhancing crystal recovery, effects of operating parameters on the crystal formation were investigated. The increase in the degree of crosslinking of resin favored crystal recovery because of its low degree of swelling. Higher concentration of displacer NaOH was advantageous. If NaOH concentration is too high, however, crystal recovery was lowered due to the solubility-enhancing effects of high pH and ionic strength. The decrease of mobile phase flow rate enhanced crystal recovery because enough time to attain local equilibrium could be provided, but film diffusion would control the overall crystal formation with extremely low flow rate. Lower temperature reduced solubility of glutamic acid and thus favored crystal formation unless the rate of ion exchange was severely reduced. The ion exchange operated by displacement mode coupled with crystallization was advantageous in reducing the burden of further purification steps and in preventing purity-loss resulted from overlapping between adjacent bands.

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Study on Electrical Characteristics of Chloromethylated Polyimide

  • Yu, I.H.;Zhong, Z-X;Lee, M.H.;Lee, S.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.472-475
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    • 2005
  • The electrical performances of liquid crystal (LC) cells with chloromethylated polyimide (CMPI) alignment layers were investigated. The CMPI layer was previously reported as a multifunctional layer that does role of LC alignment and planarization layer as well as photo-alignment material with high photosensitivity and excellent thermal stability. The capacitance-voltage (C-V) characteristics of LC cells with CMPI alignment layers were measured. Mechanical rubbing of the CMPI layer did not generate much difference in residual DC when compared to commercial PI. However, the LC cell with photo-oxidation CMPI layer shows a high residual DC value and a corresponding low voltage holding ratio (VHR) due to the photo-induced ionic charges on the alignment layer.

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High Conductivity of Transparent SWNT Films on PET by Ionic Doping

  • Min, Hyung-Seob;Kim, Sang-sig;Choi, Won-Kook;Lee, Jeon-Kook
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.65-65
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    • 2011
  • Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

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Wet Synthesis of Hydroxylammonium Nitrate (HAN) and Solid Phase Extraction Using Dual Organic Solvents (수산화암모늄나이트레이트(HAN)의 습식합성 및 이중 유기용매를 이용한 고체상 추출)

  • Kim, Sohee;Kwon, Younja;Jeon, Jong-Ki;Jo, Youngmin
    • Applied Chemistry for Engineering
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    • v.31 no.3
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    • pp.317-322
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    • 2020
  • Hydroxylammonium nitrate (HAN; NH3OHNO3) is an ionic energy material having a low melting temperature and vapor pressure with a high oxygen balance. To utilize it as an oxidizer for a high content liquid mono-propellant, a dual solvent was used to obtain HAN in a solid particulate form. The dehydrated crystal from an aqueous HAN was washed with dual organic solvents including acetone and ethanol, finally resulting in the moisture content of 13.8 wt%. When acetone was applied as a single solvent, the maximum synthesis yield of 88%, the HAN content evaluated by TGA of 86.2%, and the decomposition temperature ranged 160℃ to 205℃ were achieved.

$DeNO_{x}$ Performance of Activated Carbon Catalysts Regenerated by Surfactant Solution (계면활성제 수용액에 의해 재생된 활성탄 촉매의 탈질 성능)

  • Park, Hye-Min;Park, Young-Kwon;Jeon, Jong-Ki
    • Korean Chemical Engineering Research
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    • v.49 no.6
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    • pp.739-744
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    • 2011
  • Activated carbon SCR(CSCR) catalyst that is used to remove $NO_x$ in exhaust gas including boron discharged from the production process of liquid crystal display(LCD) shows deactivation when boron is deposited to block the pores within the catalyst or to cover its active sites. The spent carbon catalyst is regenerated by washing with various surfactants, drying and calcination. For comparison of the physical and chemical properties before and after the regeneration with the variables, type of surfactants and calcination condition, element analysis by ICP, $N_{2}$ adsorption were conducted. $DeNO_{x}$ in SCR with $NH_3$ was carried out in a fixed bed reactor at $120^{\circ}C$. The activated carbon catalyst regenerated through washing with a non-ionic surfactant in $H_{2}O$ at $90^{\circ}C$ and calcination under $N_{2}$ gas at $550^{\circ}C$ shows similar level of surface area and $NO_x$ removal efficiency with those of fresh catalyst.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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