• Advances in nano research
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• v.3 no.2
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• Journal of the Korean Chemical Society
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• v.29 no.6
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• pp.608-614
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• 1985

Electrical conductivities of $ZrO_2-Sm_2O_3$ systems containing 10, 20, 30, 40, and 50 mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperature from 500 to 1000${\circ}C$ and oxygen partial pressures from 1 ${\times}10^{-5}to 1{\times}10^{-1}$ atm. Plots of log conductivity vs. 1/T are found to be linear with an inflection point at around 650$^{\circ}C$ and the temperature dependence of conductivity shows two different defect structures. The conductivities are increased with increasing pressure, slowing a p-type character. The electrical conductivity dependences on $Po_2$ are found to be ${\sigma}{\propto}Po_2^{1/5.3}$ at 650∼1000$^{\circ}C$ and ${\sigma}{\propto}Po_2^{1/6}$ at 500∼650$^{\circ}C$, respectively, The defect structures are Oi" at 650-1000$^{\circ}C$ and $Vs_m$"' at 500-650$^{\circ}C$. The electron hole is main carrier type, however ionic contribution is found at low temperature portion. Ionic contributions increased with the increasing amount of $ZrO_2$ dopant. In 60mol% $ZrO_2-Sm_2O_3$ system, the conductivity is increased with decreasing oxygen pressure.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.187-191
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• 2019

Perovskite-type oxides have consistently attracted considerable attention for their applications in high-temperature electrochemical devices, such as electrolytes and electrodes of solid oxide fuel cells, oxygen permeating membranes and sensors etc. Among them, the electrical conductivity of 10 % Sr and 10 % Mg doped $LaAlO_3$ (LSAM9191) was measured using impedance spectroscopy and 4-probe d.c. method. Below $550^{\circ}C$, the grain boundary resistance mostly determined the overall conductivity; however, it nearly disappeared above $800^{\circ}C$. Using the defect model and curve fitting, the ionic and electronic conductivity contributions were also separated. In the temperature region where the sample resistance is mostly determined by the grain volume property, LSAM9191 was an oxygen ion conductor at low $Po_2$ and a mixed conductor at high $Po_2$. With increasing temperature, the ionic conduction region only slightly increased. Thus, LSAM9191 is a promising material as an oxygen ion conductor at high temperature and in low $Po_2$.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.146-150
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• 1998

The total conductivity and oxygen permeation in (Ce1-xZrxO2)0.9(CaO)0.1 solid solutions were measure das a function of temperature and oxygen partial pressure. Empirically, σ at given x and T was expressed essentially by σ=σo2+σeo Po2-1/4, where σo2 and σeo are constant. Applying a standard defect model in which major defects are Cace", Cece' and Vo in ideal solution, we can assign σo2 as the oxide ion conductivity decreases while the electronic conductivity increases with the increase in Zr content. Using the oxide ion and electronic conductivities thus determined, the oxygen permeation flux was calculated for respective Po2 and T conditions at which the measurements were made. The calculated values were found to agree with the observed ones.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.207-212
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• 1992

The defect structure of calcium titanates with CaO excess or $TiO_2$ excess was studied by measuring electrical conductivities as a funcition of oxygen partial pressure at $85O^{\circ}C$ to $1050^{\circ}C$. Execess CaO may divide itself equally between A and B sites, resulting in $Ca_{Ti}$" and Vo", while excess $TiO_2$ form $V_{Ca}$" and Vo". The equilibrium electrical conductivity data indicate that the solubilities of CaO and $TiO_2$ in $CaTiO_3$ are 5000ppm and 2000ppm, respectively. Oxygen vacancies contributed to the ionic conduction which flatten the conductivity minima and did not make any defect association with oppositely charged defects.ely charged defects.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.21-24
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• 1988

The electrical conductivitv of the system $ThO_2-Ho_2O_3$ was measured in the temperature range 600-$1100^{\circ}C$ and $Po_2$range $10^{-5}-2{\times}10^{-1}$ atm. The mean value of activation energy was 1.45 eV. The observed conductivity dependence on $Po_2$ was ${Po_2}^{1/4}$ at $Po_2$'s above $10^{-3}$ atm and was independent on oxygen partial pressure at $Po_2$'s below $10^{-3}$ atm. It is suggested that these dependences are due to a mixed ionic plus electron hole conduction by Vo defect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.192-192
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• 2011

Hyperthermal ion scattering experiments were conducted with low kinetic energy (<35 eV) cesium ion beams to analyze the UV-photolyzed water-ice films. Neutral molecules (X) on the surface were detected as cesium-molecule ion clusters ($CsX^+$) which were formed through a Reactive Ion Scattering (RIS) process. Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process, and were analyzed [1]. Using these methods, the thermal stability of hydronium ion ($H_3O^+$) that was produced by UV light was examined. As the thermal stability of $H_3O^+$ is related with the reaction, $H_3O^+$ + OH + $e^-$ (or $OH^-$) ${\rightarrow}$ $2H_2O$, which is similar or same with the reverse reaction of the auto-ionization of water, the result from this work would be helpful to understand the auto-ionization of $H_2O$ in water-ice that has not been well-understood yet. However, as $H_3O^+$ was not detected through a LES method, the titration experiment of $H_3O^+$ with methylamine ($CH_3NH_2$, MA), MA + $H_3O^+\;{\rightarrow}\;MAH^+$ + $H_2O$, was conducted. In this case, the presence of $MAH^+$ indicates that of $H_3O^+$ in the ice. Thus the pristine ice was photolyzed with UV light for a few minutes and this photolyzed ice was remained at the certain temperature for minutes without UV light. Then MA was adsorbed on that surface so that the population of $H_3O^+$ was found. From the calibration experiments, the relation of $MAH^+$ and $H_3O^+$ was found, so that the thermal stability of $H_3O^+$ can be investigated [2].