• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.84-93
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• 1998

Planar graded index optical waveguides have been formed by Ag$^{+}$ ion exchange in the BK7 optical glass. The experimental results of diffusion and modal characteristics of Ag$^{+}$-Na$^{+}$ exchanged BK7 glass waveguides are presented. Measurements of the mode indices have been measured. We found the relations between the process and device parameters such as the diffusion depth and the square root of the diffusion time, diffusion coefficient and diffusion temperature, and diffusion ion concentration and surface index change. A theoretical gaussian function refractive index profile matched best with the measured data for all the guided modes. The empirical relations between the process and the device parameters are derived and subsequently used to formulate a systematic procedure for fabricating singlemode and multimode waveguides.uides.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.556-564
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• 1999

The analysis on heat fluxed on and transmission efficiencies by the collimators of neutral beam injection lines in KSTAR tokamak device has been carried out. And a mathematical model describing non-Gaussian beam distribution profile has been established. A neutral beam injection device is composed of 3 separate ion sources and corresponding beam transport lines, which deal with 7.8 MW of beam power, respectively. The divergence angles of ion beam are $1.2^{\circ}$and $0.5^{\circ}$, in vertical and horizontal directions, respectively. The maximum normal heat load on source exit scraper is 9.1 kW/$\textrm{cm}^2$ and net beam transmission efficiency is ~28%. The effect of misalignment of ion source and scrapers on the scraper heat load and beam transmission also has been analyzed.

• Proceedings of the Korea Concrete Institute Conference
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• 2003.11a
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• pp.541-544
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• 2003

Chloride diffusivity is one of the important properties of concrete affecting the durability of a structure. The diffusivity for porous materials is determined conventionally by immersion in a solution. However, this method is complicate and time-consuming, often requiring months or years to obtain results. Thus, the application of colorimetric method to estimate the apparent diffusivity of chloride ion was verified in this study. The result reveals that the apparent diffusivity of chloride ion can be predicted to use colorimetric method. Additionally the colorimetric method is capable to predict the profile of chloride ion.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.465-466
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• 2013

In this paper, we propose a dynamic battery equivalent modeling of lithium-ion batteries that can be applied to the battery simulator. In order to apply battery model to battery simulator, the profile of battery model should be equal to that of actual battery. Therefore, the equivalent model was selected by considering the transient and steady-state characteristics of lithium-ion batteries. Also, to obtain transient-state behavior of the battery, the RC values of the battery are selected through the lithium-ion battery charge/discharge experiments. The validity of proposed battery model is verified from the experimental results.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.154-158
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• 2010

Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2256-2261
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• 2010

A corona discharge system with needle point or wire type corona electrode has been well used as an ionic wind blower. The corona discharge system with a needle point electrode produces ions at lower applied voltage effectively. However, the corona discharge on the needle point electrode transits to the arc discharge at lower voltage, and it is hard to obtain the elevated electric field in the discharge airgap for enhancing the ion migration velocity due to the weak Coulomb force. A cylindrical corona electrode with sharp round tip is reported as one of effective corona electrode, because of its higher breakdown voltage than that of the needle electrode. A basic study, for the effectiveness of cylindrical electrode shape on the ionic wind generation, has been investigated to obtain an maximum wind velocity, which however is the final goal for the real field application of this kind ionic wind blower. In this paper, a parametric study for maximizing the ionic wind velocity utilizing the cylindrical corona electrode and a maximum ion wind velocity of 4.1 m/s were obtained, which is about 1.8 times higher than that of 2.3m/s obtained with the needle corona electrode from the velocity profile.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.168-168
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• 2011

정보화 사회가 도래함으로 개인별 정보 이용량이 급격히 증가하였고 스마트폰과 같은 모바일 기기의 개발로 정보 이용량이 최고치를 갱신 중이다. 이러한 흐름 속에 사람들은 빠른 처리 속도와 고도의 저장 능력을 요구하게 되고 이에 따라 새로운 Random Access Memory에 대한 연구가 활발히 진행되고 있다. 현재 Dynamic Random Access Memory (DRAM)가 눈부신 발전과 성과를 이룩하고 있지만 전원 공급이 중단 될 경우 저장된 내용들이 지워진다는 단점을 가지고 있다. DRAM의 장점에 이러한 단점을 보완할 수 있는 차세대 반도체 소자로 주목 받고 있는 것이 Magnetic Random Access Memory (MRAM)이다. DRAM에서 Capacitor와 유사한 기능을 하는 MTJ stack은 tunneling magnetoresistance (TMR) 현상을 나타내는 자기저항 박막을 이용하여 MRAM 소자에 집적된다. 본 연구에서는 MRAM의 자성 재료로 구성된 MTJ stack을 효과적으로 식각하고 우수한 식각 profile을 얻는 동시에 재증착의 문제를 해결하는데 목적을 둔다. 본 IrMn 자성 박막의 식각 연구는 유도결합 플라즈마 반응성 이온 식각 (Inductively Coupled Plasma Reactive Ion Etching: ICPRIE)법을 이용하여 진행되었다. 특히 본 연구에서는 종래의 $Cl_2$, $BCl_3$ 그리고 HBr과 같은 부식성 가스가 아닌 부식성이 없는 $CH_4$가스를 선택하여 그 농도를 변화시키면서 식각하였고 더 나아가 $O_2$를 첨가하면서 그 효과를 극대화하려고 시도하였다. IrMn 자성 박막의 식각 속도, TiN 하드 마스크에 대한 식각 선택도 그리고 profile 등이 조사되었고 최종적으로 X-ray photoelectron spectroscopy (XPS)를 이용하여 식각 메카니즘을 이해하려고 하였다.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.