• Title/Summary/Keyword: ion profile

Search Result 350, Processing Time 0.023 seconds

Equilibrium and kinetic studies on the adsorption of copper onto carica papaya leaf powder

  • Varma V., Geetha;Misra, Anil Kumar
    • Membrane and Water Treatment
    • /
    • v.7 no.5
    • /
    • pp.403-416
    • /
    • 2016
  • The possibility of using carica papaya leaf powder for removal of copper from wastewater as a low cost adsorbent was explored. Different parameters that affect the adsorption process like initial concentration of metal ion, time of contact, adsorbent quantity and pH were evaluated and the outcome of the study was tested using adsorption isotherm models. A maximum of 90%-94.1% copper removal was possible from wastewater having low concentration of the metal using papaya leaf powder under optimum conditions by conducting experimental studies. The biosorption of copper ion was influenced by pH and outcome of experimental results indicate the optimum pH as 7.0 for maximum copper removal. Copper distribution between the solid and liquid phases in batch studies was described by isotherms like Langmuir adsorption and Freundlich models. The adsorption process was better represented by the Freundlich isotherm model. The maximum adsorption capacity of copper was measured to be 24.51 mg/g through the Langmuir model. Pseudo-second order rate equation was better suited for the adsorption process. A dynamic mode study was also conducted to analyse the ability of papaya leaf powder to remove copper (II) ions from aqueous solution and the breakthrough curve was described by an S profile. Present study revealed that papaya leaf powder can be used for the removal of copper from the wastewater and low cost water treatment techniques can be developed using this adsorbent.

The Etching Characteristics of (Ba, Sr) $TiO_3$Thin Films Using Magnetically Enhanced Inductively Coupled Plasma (자장강화된 유도결합 플라즈마를 이용한 (Ba, Sr) $TiO_3$박막의 식각 특성 연구)

  • 민병준;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.12
    • /
    • pp.996-1002
    • /
    • 2000
  • Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

  • PDF

The study on the dry etching characteristics of $CeO_2$ thin films ($CeO_2$ 박막의 건식 식각 특성 연구)

  • Oh, Chang-Seck;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.05b
    • /
    • pp.84-87
    • /
    • 2001
  • In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

  • PDF

A Study on the Friction and Wear Characteristics of Nitrogen Ions Coated SCM415 Steel (질소이온 코팅 SCM415강의 마찰.마모특성에 관한 연구)

  • Lyu, Sung-Ki;He, Hei-bo;Son, Yu-Sun
    • Tribology and Lubricants
    • /
    • v.23 no.1
    • /
    • pp.14-18
    • /
    • 2007
  • SCM415 alloy was implanted with nitrogen ions using plasma source ion implantation (PSII), at a dose range of $1{\times}10^{17}\;to\;6{\times}10^{17}N^{+}cm^{-2}$. Auger electron spectrometry (AES) was used to investigate the depth profile of the implanted layer. Friction and wear tests were carried out on a block-on-ring wear tester. Scanning electron microscopy (SEM) was used to observe the micro-morphology of the worn surface. The results revealed that after being implanted with nitrogen ions, the frictional coefficient of the surface layer decreased, and the wear resistance increased with the nitrogen dose. The tribological mechanism was mainly adhesive, and the adhesive wear tended to become weaker oxidative wear with the increase in the nitrogen dose. The effects were mainly attributed to the formation of a hard nitride precipitate and a supersaturated solid solution of nitrogen in the surface layer.

Electrical Properties of Silicon Implants in Cr-Doped GaAs (실리콘을 주입한 크롬이 도핑된 GaAs의 전기적 성질에 관한 연구)

  • 김용윤
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.20 no.5
    • /
    • pp.50-55
    • /
    • 1983
  • A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.

  • PDF

Morphology Development in a Range of Nanometer to Micrometer in Sulfonated Poly(ethylene terephthalate) Ionomer

  • Lee, Chang-Hyung;Inoue, Takashi;Nah, Jae-Woon
    • Bulletin of the Korean Chemical Society
    • /
    • v.23 no.4
    • /
    • pp.580-586
    • /
    • 2002
  • We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

Kinetics Studies on the Mechanism of Hydrolysis of S-Phenyl-S-vinyl-N-p-tosylsulfilimine Derivatives

  • Pyun, Sang-Yong;Kim, Tae-Rin;Lee, Chong-Ryoul;Kim, Whan-Gi
    • Bulletin of the Korean Chemical Society
    • /
    • v.24 no.3
    • /
    • pp.306-310
    • /
    • 2003
  • Hydrolysis reactions of S-phenyl-S-vinyl-N-p-tosylsulfilimine (VSI) and its derivatives at various pH have been investigated kinetically. The hydrolysis reactions produced phenylvinylsulfoxide and p-toluene sulfonamide as the products. The reactions are first order and Hammett ρ values for pH 1.0, 6.0, and 11.0 are 0.82, 0.45, and 0.57, respectively. This reaction is not catalyzed by general base. The plot of k vs pH shows that there are three different regions of the rate constants $(k_t)$ in the profile.; At pH < 2 and pH > 10, the rate constants are directly proportional to the concentrations of hydronium and hydroxide ion catalyzed reactions, respectively. The rate constant remains nearly the same at 2 < pH < 10. On the bases of these results, the plausible hydrolysis mechanism and a rate equation have been proposed: At pH < 2.0, the reaction proceeds via the addition of water molecule to sulfur after protonation at the nitrogen atom of the sulfilimine, whereas at pH > 10.0, the reaction proceeds by the addition of hydroxide ion to sulfur directly. In the range of pH 2.0-10.0, the addition of water to sulfur of sulfilimine appears to be the rate controlling step.

Liquid Chromatography-Mass Spectrometry-Based Chemotaxonomic Classification of Aspergillus spp. and Evaluation of the Biological Activity of Its Unique Metabolite, Neosartorin

  • Lee, Mee Youn;Park, Hye Min;Son, Gun Hee;Lee, Choong Hwan
    • Journal of Microbiology and Biotechnology
    • /
    • v.23 no.7
    • /
    • pp.932-941
    • /
    • 2013
  • This work aimed to classify Aspergillus (8 species, 28 strains) by using a secondary metabolite profile-based chemotaxonomic classification technique. Secondary metabolites were analyzed by liquid chromatography ion-trap mass spectrometry (LC-IT-MS) and multivariate statistical analysis. Most strains were generally well separated from each section. A. lentulus was discriminated from the other seven species (A. fumigatus, A. fennelliae, A. niger, A. kawachii, A. flavus, A. oryzae, and A. sojae) with partial least-squares discriminate analysis (PLS-DA) with five discriminate metabolites, including 4,6-dihydroxymellein, fumigatin, 5,8-dihydroxy-9-octadecenoic acid, cyclopiazonic acid, and neosartorin. Among them, neosartorin was identified as an A. lentulus-specific compound that showed anticancer activity, as well as antibacterial effects on Staphylococcus epidermidis. This study showed that metabolite-based chemotaxonomic classification is an effective tool for the classification of Aspergillus spp. with species-specific activity.

Analysis of Current Characteristics Determined by Doping Profiles in 3-Dimensional Devices (3차원 구조 소자에서의 doping profile에 따른 전류 특성 분석)

  • Cho, Seong-Jae;Yun, Jang-Gn;Park, Il-Han;Lee, Jung-Hoon;Kim, Doo-Hyun;Lee, Gil-Seong;Lee, Jong-Duk;Park, Byung-Gook
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.475-476
    • /
    • 2006
  • Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

  • PDF

Optimal Conditions for Propagation in Bottom and Top Brewing Yeast Strains

  • Cheong, Chul;Wackerbauer, Karl;Lee, Si-Kyung;Kang, Soon-Ah
    • Food Science and Biotechnology
    • /
    • v.17 no.4
    • /
    • pp.739-744
    • /
    • 2008
  • The method of yeast propagation has an influence on yeast physiology, fermentation ability, flocculation rate, and taste stability of beer. In order to find optimal conditions for propagation, several parameters were investigated in combinations. The bottom brewing yeast grown at $10^{\circ}C$ indicated that a higher flocculation capacity during the $1^{st}$ fermentation. However, the taste stability and the aroma profile were not affected by parameters of propagation investigated. The beer quality was rather affected by storage duration. In addition, a correlation between tasting and chemiluminescence was found at the beer, which was produced using bottom brewing yeast. The propagation at $10-25^{\circ}C$ with addition of zinc ion indicated the best condition to improve fermentation ability, flocculation rate, and filterability for bottom brewing yeast, whereas the propagation at $30^{\circ}C$ with addition of zinc ion showed the best condition to increase fermentation ability for top brewing yeasts.