• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.11
• /
• pp.1227-1232
• /
• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.

• Korea-Australia Rheology Journal
• /
• v.17 no.4
• /
• pp.207-215
• /
• 2005

We present a finite difference solution for electrokinetic flow in rectangular microchannels encompassing Navier's fluid slip phenomena. The externally applied body force originated from between the nonlinear Poisson-Boltzmann field around the channel wall and the flow-induced electric field is employed in the equation of motion. The basic principle of net current conservation is applied in the ion transport. The effects of the slip length and the long-range repulsion upon the velocity profile are examined in conjunction with the friction factor. It is evident that the fluid slip counteracts the effect by the electric double layer and induces a larger flow rate. Particle streak imaging by fluorescent microscope and the data processing method developed ourselves are applied to straight channel designed to allow for flow visualization of dilute latex colloids underlying the condition of simple fluid. The reliability of the velocity profile determined by the flow imaging is justified by comparing with the finite difference solution. We recognized the behavior of fluid slip in velocity profiles at the hydrophobic surface of polydimethylsiloxane wall, from which the slip length was evaluated for different conditions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.213-213
• /
• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Journal of Sensor Science and Technology
• /
• v.23 no.3
• /
• pp.185-191
• /
• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of the Korean Vacuum Society
• /
• v.20 no.2
• /
• pp.100-105
• /
• 2011

Simulations were performed using Crystal TRIM software under the same conditions used by previous researchers in order to clarify the mechanism that determines sheet resistance various doses, energies and beam currents. The results showed that the peak of the depth profile (Rp) in the same sample gradually shifts inward and damage increases near the surface as the energy increases for $As^+$ equal dose of $1{\times}10^{15}/cm^2$ implanted into Si(100) energies of 5, 10, and 15 keV. From a theoretical calculation of B+ ion implantation processes at energy of 20 keV using parameters that correspond to 1 mA and 7 mA beam currents with the same dose of $5{\times}10^{15}/cm^2$, it was found that the higher beam currents resulted in more damage near the surface (<100 nm). Likewise, In the simulations employing sets of doses ($1{\times}10^{15}$, $3{\times}10^{15}/cm^2$) and beam currents (0.8 mA, 8 mA), more damage was produced at larger doses and higher current. Thus, sheet resistance at the surface was reduced by the intensified damage from increases in beam energy, dose and beam currents.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.6
• /
• pp.1679-1683
• /
• 2013

Intergrowth perovskite type complex oxides $La_{0.8}Ln_{0.2}Sr_2MnCrO_{7-{\delta}}$ (Ln=La, Nd, Gd, and Dy) have been synthesized by sol-gel method. Rietveld profile analysis shows that the phases crystallize with tetragonal unit cell in the space group I4/mmm. The unit cell parameters a and c decrease with decreasing effective ionic radius of the lanthanide ion. The magnetic studies suggest that the ferromagnetic interactions are dominant due to $Mn^{3+}$-O-$Mn^{4+}$ and $Mn^{3+}$-O-$Cr^{3+}$ double exchange interactions. Both Weiss constant (${\theta}$) and Curie temperature ($T_C$) increase with decreasing ionic radius of lanthanide ion. It was found that the transport mechanism is dominated by Mott's variable range hopping (VRH) model with an increase of Mott localization energy.

• Aerospace Engineering and Technology
• /
• v.7 no.2
• /
• pp.110-116
• /
• 2008

This paper gives a brief summary of the TVC battery design description, specifications and test results. The TVC battery for KSLV-I upper stage contains 168 Sony l8650VT high power lithium-ion cells. It configured as 2 strings in parallel, with each string containing 84 series connected cells. This allows to meet nominal 270V voltage and capacity requirements specified for the mission of the Thrust Vector Control(TVC) system. The loads profile of the TVC system has short duration, high current pulse. To power such a system with minimal mass, the battery employed l8650VT Cells. This cell is specifically designed for high rate applications and is capable of a 10C continuous discharge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.10
• /
• pp.747-751
• /
• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.21-24
• /
• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.3 no.2
• /
• pp.85-93
• /
• 2005

Isotopes of alkali and alkaline earth metals (AM and AEM) are the main contributors to the heat load and the radiotoxicity of spent fuel (SF) . These components are separated from the SF and dissolved in a molten LiCl in an electrolytic reduction process. A mass transfer model is developed to describe the diffusion behavior of Cs, Sr, and Ba in the SF into the molten salt. The model is an analytical solution of Fick's second law of diffusion for a cylinder which is the shape of a cathode in the electrolytic reduction process. And the model is also applied to depict the concentration profile of the oxygen ion which is produced by the electrolysis of Li$_{2}$O. The regressed diffusion coefficients of the model correlating the experimentally measured data are evaluated to be greater in the order of Ba, Cs, and Sr for the metal ions and the diffusion of the oxygen ion is slower than the metal ions which implies that different mechanisms govern the diffusion of the metal ions and the oxygen ions in a molten LiCl.