• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.719-726
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• 1996

DLTS measurements were performed to study the annealing induced changes of the trap centers in MOV and to shed more light on the stability mechanism of the MOV. Two electron traps, Ec-0.26[eV] and Ec-(O.2-0.3)[eV], were observed in the unannealed samples in large quantities(7-9 X 1014[CM 3]), whereas the three electron traps Ec-0.17 [eV], Ec-0.26[eV] and Ec-(O.2-0.3)[eV] were observed far less in the annealed samples. The minima in the Ec-0.26[eV] trap density, coupled with the presented results that unannealed devices are unstable whereas 600.deg. C annealed devices are most stable, suggests that the instability of the MOV under long term electrical stressing is related to the Ec-0.26[eV] trap. This results support that the ion migration model for the device instability where the Ec-0.26[eV] defects may be the interstitial zinc or the migrating ions. The interstitial zinc originated as a result of the nonstoichiometric nature of ZnO might cause the degradation of the I-V characteristics of the MOV with long term electrical stressing.

• 한국진공학회지
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• 제13권3호
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• pp.120-126
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• 2004

트렌치 소자 제조시 게이트 산화막 성장과 내압 강하의 원인이 되는 식각손상 회복과 코너 영역의 구조를 개선하기 위해 수소 분위기 열처리를 하였다. 열처리시 수소 원자에 의한 환원 반응을 이용하여 표면 에너지가 높은 코너 영역에서는 원자들의 이동에 의한 결정면 재배열, 산화막 측벽에서의 실리콘 원자 적층, 표면 거칠기의 개선 효과 등을 전자현미경 관찰을 통해 확인하였다. 실리콘 원자의 이동을 방해하는 식각 후 잔류 산화막을 수소 가스의 환원성 분위기에서 열처리함으로써 표면 에너지를 낮추는 방향으로 원자의 이동이 일어나 concave 영역, 즉 트렌치 bottom corner에서는 (111), (311) 결정면 재분포 현상이 일어남을 확인할 수 있었다. 또한 convex comer에서의 원자 이동으로 인해 corner 영역에서는 (1111) 면의 step 들이 존재하게 되고 원자 이동에 의해 산화막 측벽에 이르러 이동된 원자의 적층이 일어나며, 이는 열처리시 표면 손상 회복이 원자이동에 의함을 나타낸다. 이러한 적층은 표면 상태가 깨끗할수록 정합성을 띄어 기판과 일치하는 에피 특성을 나타내고 열처리 온도가 높을수록 표면 세정 효과가 커져 식각손상 회복효과가 커지며, 이를 이용하여 이후의 산화막 성장시 균일한 두께를 코너영역에서 얻을 수 있었다

• The Korean Journal of Physiology and Pharmacology
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• 제27권4호
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• pp.311-323
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• 2023

Ion homeostasis, which is regulated by ion channels, is crucial for intracellular signaling. These channels are involved in diverse signaling pathways, including cell proliferation, migration, and intracellular calcium dynamics. Consequently, ion channel dysfunction can lead to various diseases. In addition, these channels are present in the plasma membrane and intracellular organelles. However, our understanding of the function of intracellular organellar ion channels is limited. Recent advancements in electrophysiological techniques have enabled us to record ion channels within intracellular organelles and thus learn more about their functions. Autophagy is a vital process of intracellular protein degradation that facilitates the breakdown of aged, unnecessary, and harmful proteins into their amino acid residues. Lysosomes, which were previously considered protein-degrading garbage boxes, are now recognized as crucial intracellular sensors that play significant roles in normal signaling and disease pathogenesis. Lysosomes participate in various processes, including digestion, recycling, exocytosis, calcium signaling, nutrient sensing, and wound repair, highlighting the importance of ion channels in these signaling pathways. This review focuses on different lysosomal ion channels, including those associated with diseases, and provides insights into their cellular functions. By summarizing the existing knowledge and literature, this review emphasizes the need for further research in this field. Ultimately, this study aims to provide novel perspectives on the regulation of lysosomal ion channels and the significance of ion-associated signaling in intracellular functions to develop innovative therapeutic targets for rare and lysosomal storage diseases.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.335-338
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed environment-dependent interatomic ptential (EDIP) was suitable for ultra low ion implantation simulation, and found that point defects formation energies were in good agrrement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. The number of isolated defects that are produced by collision cascades are onlya few of the total number of defects, and fmost of the damages are concentrated into amorphous-like pockets.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.445-445
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• 2008

The behavior of ion trapping and migration in the yittria-stabilized zirconia pellets following high dose ion beam irradiation have been studied using SEM, EDX, and TGA. The ion beam was irradiated at room and higher temperatures and the differences in their results were interpreted in terms of dynamic annealing effects. The SRIM calculation was also performed to explain the cross sectional SEM image of the electrolytes.

• 한국표면공학회지
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• 제24권3호
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• pp.137-143
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• 1991

The relation between the ion irradiation induced grain growth and the basic parameters sinvolved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with nuclear energy deposition and thermodynamic properties such as cohesive energy ( Hc) and heat of mixing ( Hm). A model for the grain growth based on the thermal spike induced atomic migration was developed and applied to interpret experimental results.

• 전자공학회논문지D
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• 제35D권12호
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• pp.30-40
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• 1998

극 저 에너지 실리콘 이온 주입 시뮬레이션을 통하여 실리콘 내부에서 발생하는 격자 손상에 대하여 고전분자 동역학을 사용하여 시뮬레이션 하였다. 또한 최근에 개발된 EDIP 전위식이 실리콘 충돌 계산에 적합한지 여부를 분자 동역학을 사용하여 계산하였다. EDIP 전위식은 평형상태 계산에 알맞지만 충돌을 계산하는데는 적합하지 않았다. 또한 MDRANGE를 실리콘 공정에 맞도록 향상시켜 200eV, 500eV, 그리고 1000eV 에너지 붕소 이온 주입 시뮬레이션을 수행하여 실리콘 기판의 온도, 기울기 각도 및 에너지에 따른 붕소의 분포를 계산하였다. 1000eV 이하 에너지 붕소 이온 주입에서도 체널링 현상에 대한 고려가 필요하다는 것을 알 수 있었다.

• 한국표면공학회지
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• 제54권5호
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• pp.213-221
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• 2021

In order to improve the energy density and safety of Li-ion batteries, the development of a separator with high thermal stability and electrolyte wettability is an important desire. Thus, the ceramic separator to replace the polymer type is one of the most promising materials that can prevent short-circuit caused by the formation of dendrite and thermal deformation. In this study, we introduce the fabrication of various anodic aluminum oxide membranes for the application of Li-ion battery separators with the advantages of improved mechanical/thermal stability, wettability, and a high rate of Li⁺ migration through the membrane. Two different types of through-holes and branched anodic aluminum oxide membranes are well used in lithium-ion battery separators, however, branched anodic aluminum oxide membranes exhibit the most improved performance with capacity (126.0 mAh g^-1 @ 0.3C), capacity drop at the high C-rate (30.6 %), and low internal resistance (8.2 Ω).

• 공업화학
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• 제35권1호
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• pp.48-53
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• 2024

전기화학 기반의 SEI 성장 모델을 이용하여 리튬이온 배터리의 캘린더 노화 및 장기 수명을 예측하였다. 네 가지 유형의 장기 SEI 성장 모델(용매 확산 제한 모델, 전자 이동 제한 모델, 리튬-간극 확산 제한 모델, 반응 제한 모델)을 적용하여 수치해석이 이루어졌고, 캘린더 에이징 동안의 용량 감소와 리튬 재고 손실을 계산하였다. 수치해석 결과, 전자 이동 제한 모델과 리튬-간극 확산 제한 모델이 낮은 용량 감소를 보였으며, 용매 확산 제한 모델과 반응 제한 모델은 10년이내에 80%의 용량 감소를 보였다. 캘린더 노화 중 저온 보관 시 SEI의 성장을 저하시켜 용량 감소가 적었다. 사이클링 중 C-rate가 증가할수록 SEI 두께 증가로 수명 하락이 크게 나타났으나 그 차이는 크지 않았다.

• Corrosion Science and Technology
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• 제6권2호
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.