• Journal of electromagnetic engineering and science
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• v.2 no.1
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• pp.5-10
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• 2002

We have analized the inverse class-F and class-F amplifiers using their waveforms. From the analytic equations derived from the analysis, we have calculated tole efficiencies, output powers, DC power dissipations, and optimum fundamental load impedances of the inverse class-F and class-F amplifiers. We also have compared them for various operation conditions, which include the same peak current, saute DC power dissipation, same fundamental RF output power, and same fundamental load impedance with different Ron(on-resistance). These analyses have clearly shown the performance limitations, advantages, and guide to the optimized design of the inverse class-F amplifiers.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.2
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• pp.141-146
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• 2009

In this paper, a novel harmonic control circuit has been proposed for the design of high-efficiency power amplifier with Si LDMOSFET. The proposed harmonic control circuit haying the short impedances for the second- and third-harmonic components has been used to design the in/output matching network. The efficiency enhancement effect of the proposed harmonic control circuit is superior to the class-F or inverse class-F harmonic control circuit. Also, when the proposed harmonic control circuit has been adapted to the input matching network as well as the output matching network, the of ficiency enhancement effect of the proposed power amplifier has increased all the more. The measured maximum power added efficiency (PAE) of the proposed power amplifier is 82.68% at 1.71GHz band. Compared with class-F and inverse class-F amplifiers, the measured maximum PAE of the proposed power amplifier has increased in $5.08{\sim}9.91%$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1060-1068
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• 2011

In this paper, Current-Mode Class-D(CMCD) RF Power Amplifier(PA) is designed and implemented at 900 MHz. Conventional CMCD PA has output parallel resonator to reconstruct a fundamental frequency component of the output signal. However the resonator can be removed by connecting inverse class-F PAs because even-harmonic components can be removed by CMCD PA's push-pull structure. Using load-pull, inverse class-F PA with GaN transistors is designed, and CMCD PA with the inverse class-F PA is implemented. The CMCD PA has 64.5 % drain efficiency, 34.2 dBm output power. Comparing with the drain efficiency of a CMCD PA with parallel resonator, the CMCD with the inverse class-F technology has 13.6 % improved drain efficiency.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.82-88
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• 2015

The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.813-822
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• 2009

We have investigated operation of a 1:2:2 asymmetric 3-stage Doherty PA(Power Amplifier) and implemented using the Freescale's 4 W, 10 W PEP LDMOSFETS at 1 GHz. By employing the three peak efficiency characteristics, compared to the two peak N-way Doherty PA, the asymmetric 3-stage Doherty can overcome the serious efficiency degradation along the backed-off output power region and maximize the average efficiency for the modulation signal. To maximize the efficiency characteristic, the inverse class F PA has been designed as carrier and peaking amplifiers. Furthermore, to extract the proper load modulation operation, the adaptive gate bias control signal has been applied to the two peaking PAs based on the envelope tracking technique. For the 802.16e Mobile WiMAX(World Interoperability for Microwave Access) signal with 8.5 dB PAPR(Peak to Average Power Ratio), the proposed Doherty PA has shown 55.46 % of high efficiency at an average output power of 36.85 dBm while maintaining the -37.23 dB of excellent RCE(Relative Constellation Error) characteristic. This is the first time demonstration of applying the saturated PA and adaptive gate bias control technique to the asymmetric 3-stage Doherty PA for the highly efficient transmitter of the base-station application.