• 한국초전도학회:학술대회논문집
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• v.9
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• pp.178-184
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• 1999

We have measured I-V characteristics of Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ mesa containing a small number of intrinsic stacked Josephson junctions in a magnetic field. We fabricated mesa with an area of 40${\times}$40 ${\mu}$m$^2$ containing 3${\sim}$20 intrinsic junctions. We applied magnetic field perpendicular to He CuO$_2$ planes up to 5T. We observed flux-flow branches and flux-flow steps in the I-V characteristics which might be due to collective motion of Josephson vortices in the long junction limit. In a parallel field, critical current I$_c$ varies as I$_c$(B) ${\sim}$ exp(-B/B$_0$), where B$_0$ is about 2T, which is consistent with the theoretical model. DC and AC intrinsic Josephson effects are also discussed.

• Progress in Superconductivity
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• v.7 no.1
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• pp.17-21
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• 2005

We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.48-48
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• 2006

• Progress in Superconductivity
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• v.4 no.1
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.