• 제목/요약/키워드: internal state manipulation

검색결과 4건 처리시간 0.017초

모터 제어 정밀도 향상을 위한 정지 마찰력 보상 (Static Friction Compensation for Enhancing Motor Control Precision)

  • 류정래;도태용
    • 제어로봇시스템학회논문지
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    • 제20권2호
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    • pp.180-185
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    • 2014
  • DC motor is a representative electric motor commonly utilized in various motion control fields. However, DC motor-based motion control systems suffer from degradation of position precision due to nonlinear static friction. In order to enhance control precision, friction model-based compensators have been introduced in previous researches, where friction models are identified and counter inputs are added to control inputs for cancelling out the identified friction forces. In this paper, a static friction compensator is proposed without use of a friction model. The proposed compensation algorithm utilizes internal state manipulation to generate compensation pulses, and related parameters are easily tuned experimentally. The proposed friction compensator is applied to a DC motor-based motion control system, and results are presented in comparison with those without a friction compensator.

대규모 조합문제를 해결하기 위한 효율적인 논리함수 처리 시스템의 개발과 순서회로 설계에의 응용 (Development of an efficient logic function manipulation system for solving large-scale combiation problems and its application to logic design of sequential circuits)

  • 권용진
    • 한국통신학회논문지
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    • 제22권8호
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    • pp.1613-1621
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    • 1997
  • Many studies on internal data expression to process logic functions efficiently on computer have been doing actively. In this paper, we propose an efficient logic function manipulation system made on the Objected-Oriented manner, where Binary Decision Diagrams(BDD's) are adopted for internal data espressionof logic functions. Thus it is easy to make BDD's presenting combinational problems. Also, we propose a method of applying filtering function for reducing the size of BDD's instead of attributed bits, and add it to the mainpultion system. As a resutls, the space of address is expanded so that the number of node that can be used in the mainpulation system is increased up to 2/sup 27/. Finally, we apply the implemented system to One-Shot state assignment problems of asynchronous sequential circuits and show that it is efficient for the filtering method to reduce the size of BDD's.

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Closed form ultimate strength of multi-rectangle reinforced concrete sections under axial load and biaxial bending

  • da Silva, V. Dias;Barros, M.H.F.M.;Julio, E.N.B.S.;Ferreira, C.C.
    • Computers and Concrete
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    • 제6권6호
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    • pp.505-521
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    • 2009
  • The analysis of prismatic members made of reinforced concrete under inclined bending, especially the computation of ultimate loads, is a pronounced non-linear problem which is frequently solved by discretizing the stress distribution in the cross-section using interpolation functions. In the approach described in the present contribution the exact analytical stress distribution is used instead. The obtained expressions are integrated by means of a symbolic manipulation package and automatically converted to optimized Fortran code. The direct problem-computation of ultimate internal forces given the position of the neutral axis-is first described. Subsequently, two kinds of inverse problem are treated: the computation of rupture envelops and the dimensioning of reinforcement, given design internal forces. An iterative Newton-Raphson procedure is used. Examples are presented.

내부 고조파 조정 회로로 구성되는 고효율 370 W GaN HEMT 소형 전력 증폭기 (A Compact 370 W High Efficiency GaN HEMT Power Amplifier with Internal Harmonic Manipulation Circuits)

  • 최명석;윤태산;강부기;조삼열
    • 한국전자파학회논문지
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    • 제24권11호
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    • pp.1064-1073
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    • 2013
  • 본 논문에서는 내부 고조파 조정 회로로 구성되는 셀룰러와 L-대역용 소형의 고효율 370 W GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) 소형 전력 증폭기(PA)를 구현하였다. 원천 및 2차 고조파 주파수에서 동시에 높은 효율을 내기 위해 새로운 회로 정합 형태를 적용했다. 소형화를 위하여 새로운 41.8 mm GaN HEMT와 2개의 MOS(Metal Oxide Semiconductor) 캐패시터를 구성 물질의 변화를 이용하여 열 저항을 개선한 $10.16{\times}10.16{\times}1.5Tmm^3$ 크기의 새로운 패키지에 와이어 본딩으로 결합하였다. 드레인 바이어스 48 V 인가 시, 개발된 GaN HEMT 전력 증폭기는 370 W 포화 출력 전력(Psat.)과 770~870 MHz에서 80 % 이상, 1,805~1,880 MHz에서 75 % 이상의 드레인 효율(DE)을 나타내었다. 이는 지금까지 보고된 셀룰러와 L대역에서 GaN HEMT 전력 증폭기 중 최고의 효율과 출력 전력 특성이다.