• Journal of Welding and Joining
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• v.18 no.6
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• pp.62-67
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• 2000

Metallurgical characteristics of bonded region and high temperature mechanical properties of heat resistant alloy, Fe-35Ni-26Cr during liquid phase diffusion bonding were investigated employing AM17 insert metal. The insert metal for bonding, AM17 was newly developed Ni-base metal using interpolation method. Bonding of specimens were carried out at 1,403~1,463K for 600s in vacuum. The microconstituents in the bonded interlayer disappeared in the bonding temperature over 1,423K. The microstructures, alloying elements and hardness distribution in the base metal. The tensile strength and elongation of the joints at elevated temperatures were the same level as one of the base metal in the bonding temperature over 1,423K. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• Journal of Magnetics
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• v.3 no.3
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• pp.92-95
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• 1998

In this paper we report the low and high angle diffraction results, and the magnetic and magnetroesistive characteristics of the spin valve multilayer structure prepared by the sputter machine Emerald II in the Balzers Laboratory. The investigated system consists of a ferromagnetic free layer (7 nm NiFe) and a ferromagnetic pinned layer (7 nm NiFe), separated from each other by a nonmagnetic (2.1 nm Cu) spacer. The NiFe pinned layer is fixed by the exchange coupling with an antiferromagnetic layer (10 nm FeMn). For such system the magnetoresistance ratio ΔR/R=3.58%, the interlayer exchange coupling $H_c=6.4$ Oe and the field sensitivity 1.15%/Oe were otained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.118-119
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• 2007

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

• Steel and Composite Structures
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• v.43 no.6
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• pp.797-808
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• 2022

This paper presents an investigation on the free vibration characteristics of functionally graded nanocomposite double-beams reinforced by single-walled carbon nanotubes (SWCNTs). The double-beams coupled by an interlayer spring, resting on the elastic foundation with a linear layer and shear layer, and is simply supported in thermal environments. The SWCNTs gradient distributed in the thickness direction of the beam forms different reinforcement patterns. The materials properties of the functionally graded carbon nanotube-reinforced composites (FG-CNTRC) are estimated by rule of mixture. The first order shear deformation theory and Euler-Lagrange variational principle are employed to derive the motion equations incorporating the thermal effects. The vibration characteristics under several patterns of reinforcement are presented and discussed. We conducted a series of studies aimed at revealing the effects of the spring stiffness, environment temperature, thickness ratios and carbon nanotube volume fraction on the nature frequency.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1559-1562
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• 1999

We formed $SiO_2:F$ films by low-temperature process called Liquid Phase Deposition(LPD) and investigated its electrical and physical properties. Because of the use of room-temperature and no special vacuum apparatus for forming $SiO_2:F$ films, this technique can have some advantages related with the application to dielectric interlayer for multilevel structure in ULSI devices. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate showed a similar or better tendency compared with $SiO_2$ films formed by CVD, Sputter, E-beam evaporator etc.. The fourier transform infrared (FTIR) spectra revealed that the contained fluorine atoms exist uniform throughout the formed $SiO_2$ films. The Scanning Electron Microscope images showed that LPD-$SiO_2$ films could be stably grown on silicon substrates and the good step-coverage could also be obtained, which indicates that the LPD-$SiO_2$ films have some possibility of the application to planarization and interlayer dielectric films which are vitally necessary to achieve the multilevel interconnection in ULSI. The I-V characteristics has some distinct differences according to the concentration of growth solution.

• Journal of the Mineralogical Society of Korea
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• v.15 no.4
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• pp.305-314
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• 2002

The dehydration of hexadecyltrimethylammonium (HDTMA)-exchanged montmorillonite has been studied using X-ray diffractometry (XRD) and differential scanning calorimetry (DSC). The dehydration in HDTMA-montmorillonite seems to influence the swelling behavior of the organo-clay during heating. The basal d(001) spacing vs temperature curve of the HDTMA-montmorillonite has one broad swelling edge with a shoulder on the low-temperature side. We believe that the shoulder at $100^{\circ}C$ for the HDTMA-montmorillonite is due to interlayer swelling induced by the initial rearrangement of surfactants, and the second edge at $200^{\circ}C$ is caused by interlayer swelling resulting from the secondary vertical reorientation of alkyl chains. It seems that the dehydration of organo-clay induces a reorientation of the alkyl chains by transition to more vertical position relative to the silicate sheets, allowing instantly greater d-spacing.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.15 no.1
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• pp.27-34
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• 2017

In this study, desorption characteristics of Cs from clay according to the hydrophobic alkyl chain length of the cationic surfactant were investigated. Alkyltrimethylammonium bromide was used as a cationic surfactant, and the length of the hydrophobic alkyl chain of the cationic surfactant was varied from -octyl to -cetyl. The adsorbed amount of the cationic surfactant on montmorillonite increased with the length of the hydrophobic alkyl chain, and intercalation of the cationic surfactant into the clay interlayer increased the interlayer distances. The Cs removal efficiency was also enhanced with increasing alkyl chain length, and the cationic surfactant with the cetyl group showed a maximum Cs removal efficiency of $992{\pm}2.9%$.