• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.291-293
• /
• 2000

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

• Journal of the Korean Ceramic Society
• /
• v.48 no.5
• /
• pp.479-484
• /
• 2011

In this paper, investigations of thick film $La_{0.75}Sr_{0.25}Ga_{0.8}Mg_{0.16}Fe_{0.04}O_{3-{\delta}}$ (LSGMF) cells fabricated via spin coating on either NiO-YSZ anode or $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_3$ (LSGF) cathode substrates are presented. A La-doped $CeO_2$ (LDC) layer is inserted between NiO-YSZ and LSGMF in order to prevent reactions from occurring during co-firing. For the LSGF cathode-supported cell, no interlayer was required because the components of the cathode are the same as those of LSGMF with the exception of Mg. An LSGMF electrolyte slurry was deposited homogeneously on the porous supports via spin coating. The current-voltage characteristics of the anode and cathode supported LSGMF cells at temperatures between $700^{\circ}C$ and $850^{\circ}C$ are described. The LSGF cathode supported cell demonstrates a theoretical OCV and a power density of ~420 mW $cm^2$ at $800^{\circ}C$, whereas the NiO-YSZ anode supported cell with the LDC interlayer demonstrates a maximum power density of ~350 mW $cm^2$ at $800^{\circ}C$, which decreased more rapidly than the cathode supported cell despite the presence of the LDC interlayer. Potential causes of the degradation at temperatures over $700^{\circ}C$ are also discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1437-1439
• /
• 2007

We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye-doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. In our devices, there was no need of exciton-blocking layer between the each emission layer for the further confinement of the diffusion of excitons.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.86-89
• /
• 2003

Chemical Mechanical Planarization(CMP) has been accepted as the most effective processes for ultra large scale integrated (ULSI) chip manufacturing. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. And pad surface is ununiformly deformed as real contact distance. These defects make material removal rate(MRR) decrease with a number of polishied wafer. Also the desired within-chip planarity, within wafer non-uniformity(WIWNU) and wafer to wafer non-uniformity(WTWNU) arc unable to be achieved. So, pad conditioning in CMP Process is essential to overcome these defects. The eletroplated or brazed diamond conditioner is used as the conventional conditioning. And. allumina long fiber, the jet power of high pressure deionized water, vacuum compression. ultrasonic conditioner aided by cavitation effect and ceramic plate conditioner are once used or under investigation. But. these methods arc not sufficient for ununiformly deformed pad surface and the limits of conditioning effect. So this paper focuses on the characteristics of diamond conditioner which reopens glazed pores and removes ununiformly deformed pad away.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.19-24
• /
• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.11
• /
• pp.168-173
• /
• 2001

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.16 no.12
• /
• pp.2340-2348
• /
• 1992

Recently, various film coated insert tools have been used in order to improve tool life by several different vapor deposition or chemical vapor deposition. Especially, TiN coated drills have been broadly studied because of improving drill performance in terms of drill life, work quality and its brilliant color. Nevertheless, because of the poor adhesion between TiN film and drill, it was difficult to attain the better drill performance. Therefore, to improve adhesion of TiN films, we sputtered titanium as interlayer prior to TiN deposition on drill by PECVD(Plasma Enhanced Chemical Vapor Deposition). The results indicate that Ti/TiN coated drills achieve about 2.6 times life improvement, while TiN coated drills only 2 times. Wear characteristics of tested drills were examined using SEM, and the results were correlated with drill life and roughness of drilled holes.

• Steel and Composite Structures
• /
• v.44 no.4
• /
• pp.473-488
• /
• 2022

A high-speed railway (HSR) bridge may undergo long-term deformation due to the degradation of material stiffness, or foundation settlement during its service cycle. In this study, an analytical model is set up to evaluate the influence of this long-term vertical bridge deformation on the track geometry. By analyzing the structural characteristics of the HSR track-bridge system, the energy variational principle is applied to build the energy functionals for major components of the track-bridge system. By further taking into account the interlayer's force balancing requirements, the mapping relationship between the deformation of the track and the one of the bridge is established. In order to consider the different behaviors of the interlayers in compression and tension, an iterative method is introduced to update the mapping relationship. As for the validation of the proposed mapping model, a finite element model is created to compare the numerical results with the analytical results, which show a good agreement. Thereafter, the effects of the interlayer's different properties of tension and compression on the mapping deformations are further evaluated and discussed.

• Journal of the Mineralogical Society of Korea
• /
• v.15 no.4
• /
• pp.315-327
• /
• 2002

Al-pillared clay was synthesized by constructing pillars of aluminum oxides at the interlayer of montmorillonite in bentonite. XRD, DTA and chemical analyses of Al-pillared clay were performed to examine mineralogical properties. Batch adsorption experiments were also conducted to determine the adsorption properties of this synthesized clay for phosphate ions. XRD analyses showed that the interlayer space of Al-pillared clay expanded to 18.03 $\AA$ at room temperature and shifted to $17 \AA$ after heating to $550^{\circ}C$. A small change in interlayer space after heating indicates high thermal stability. The interlayer expansion by glycerol was also very small. From DTA analyses, pillared clay showed the characteristic endothermic peaks at 270 and $420^{\circ}C$ , which might be caused by dehydration in framework of pillars between interlayers. Adsorption experiment revealed that Al-pillared clay had an excellent adsorption capacity to the phosphate ions, whereas montmorillonite had very low adsorption capacity to phosphate ions. In phosphate solution concentration up to 300 mg/L, 2 g of pillared clay could uptake almost 100% of phosphate ions from 20 mL of solution. After heat treatment of the phosphate adsorbed pillared clay at 50$0^{\circ}C$ to remove phosphate, the calcined pillared clay could adsorb phosphate ions with a little decreased adsorption efficiency. This fact indicates that Al-pillared clay can be recycled for the adsorption of phosphate ions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.457-457
• /
• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.