• Structural Engineering and Mechanics
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• 제51권1호
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• pp.163-180
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• 2014

In the displacement based finite element analysis of composite beams that consist of two Euler-Bernoulli beams juxtaposed with a deformable shear connection, the coupling of the displacement fields may cause oscillations in the interlayer slip field and reduction in optimal convergence rate, known as slip-locking. In this study, the B-bar procedure is proposed to alleviate the locking effects. It is also shown that by changing the primary dependent variables in the mathematical model, to be able to interpolate the interlayer slip field directly, oscillations in the slip field can be completely eliminated. Examples are presented to illustrate the performance and the numerical characteristics of the proposed methods.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2022년도 봄 학술논문 발표대회
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• pp.63-64
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• 2022

Inter-floor noise in an apartment building is a serious problem that causes conflicts between tenants. Accordingly, there are various attempts to solve this problem, but it is not easy to find a clear solution. Therefore, in this study, a soundproofing material between floors was developed that can improve the sagging that occurs after construction. And as a result of testing the developed interlayer soundproofing material, both light weight and weight were grade 1. And it was analyzed that maintenance performance could be improved with integrated structural characteristics.

• 한국진공학회지
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• 제10권4호
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• pp.403-410
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• 2001

본 연구에서는 차세대 Cu 박막 증착 방법으로 유망한 CVD(chemical vapor deposition)방법으로 실질적 배선 증착 공정과 동일하게 시행하여 여러 조건에서 Cu를 증착하여 가장 EM에 관하여 높은 내구성을 가지는 조건을 알아보고 또한 박막의 미세구조가 EM에 어떠한 영향을 미치는지를 알아보았으며 MOCVD 방식으로 증착한 Cu박막의 표면과 barrier layer인 TiN과의 응력(stress)을 조사하여 차세대 EM모델인 grain boundary grooving 모델에 실질적으로 적용하였다. 또한, 이러한 실험을 행 한 후에 정확한 EM 현상을 관찰하고 분석하여 반도체 소자의 신뢰성과 성능개선, 결함 예측, 그리고 소자의 배선설계에 중요한 정보를 제공할 것이다. 또한, 보다 우수한 EM 특성을 가질 수 있게 하기 위해 barrier layer위에 Cu와의 접착력(adhesion)을 향상시킬 수 있는 promoter로 Al을 이용하여 얇게 증착한 후 EM축적 파괴 실험을 하여 EM에 대한 높은 저항성을 실질적으로 가질 수 있는지에 대한 실험도 병행하였다.

• 한국재료학회지
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• 제27권7호
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• 한국기계가공학회지
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• 제8권3호
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• pp.62-67
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• 2009

Pt thin films on Cr or Ti interlayer were deposited onto a tungsten carbide(WC) substrate by the ion beam assisted DC magnetron sputtering. The various atomic percent of Cr and Ti underneath of the Pt films were prepared to examine the total thin film characteristics. The microstructure and surface analysis of the specimen were conducted by using the SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Pt thin film also were examined. The interlayer of pure Ti was formed with 40 nm thickness while that of pure Cr was done with 50 nm as standard reference. The growth rate of either Cr or Ti thin film was almost same under the same deposition conditions. The SEM images showed that anisotropic grain of Pt thin films consisting of dense columnar structures irrespectively grew from the different target compositions. The values of hardness and adhesion strength of Cr/Pt thin film coated on a WC substrate were higher than those of Ti/Pt thin film.

• Korean Chemical Engineering Research
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• 제54권2호
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• pp.274-277
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• 2016

녹색 발광다이오드의 다양자우물층과 전자막이층 사이에 p형 중간층 삽입이 소자의 특성에 미치는 영향이 소자 시뮬레이션을 통하여 연구되었다. 중간층의 Mg 도핑 깊이에 따른 발광다이오드의 전류-전압, 발광파장, 누설전류, 광효율 특성이 분석되었으며 최적의 발광 특성을 나타내는 소자 구조가 제시되었다. 중간층 전 영역이 p형으로 도핑된 구조와 30 nm까지 도핑된 구조는 누설전류 억제를 통하여 녹색 발광다이오드의 가장 큰 문제점 중에 하나인 효율 드룹 현상을 효과적으로 완화하였다. 특히, 30 nm까지 도핑된 구조는 전류-전압 및 발광 특성에 있어서 가장 향상된 결과를 보였다.

• Earthquakes and Structures
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• 제23권1호
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• pp.101-113
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• 2022

A new type of fabricated subway station construction technology can effectively solve these problems. For a new type of metro structure form, it is necessary to clarify its mechanical properties, especially the seismic performance. A soil-structure elastoplastic finite element model is established to perform three-dimensional nonlinear dynamic time-history analysis based on the first fabricated station structure-Yuanjiadian station of Changchun Metro Line 2, China. Firstly, the nonlinear seismic response characteristics of the fabricated and cast-in-place subway stations under different seismic wave excitations are compared and analyzed. Then, a comprehensive analysis of several important parameters that may affect the seismic response of fabricated subway stations is given. The results show that the maximum plastic strain, the interlayer deformation, and the internal force of fabricated station structures are smaller than that of cast-in-place structure, which indicates that the fabricated station structure has good deformation coordination capability and mechanical properties. The seismic responses of fabricated stations were mainly affected by the soil-structure stiffness ratio, the soil inertia effect, and earthquake load conditions rarely mentioned in cast-in-place stations. The critical parameters have little effect on the interlayer deformation but significantly affect the joints' opening distance and contact stress, which can be used as the evaluation index of the seismic performance of fabricated station structures. The presented results can better understand the seismic responses and guide the seismic design of the fabricated station.

• 공업화학
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• 제8권5호
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• pp.742-748
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• 1997

초경공구(WC-Co)의 성능 향상을 목적으로 고경도, 높은 열전도도의 특성 등을 가진 다이아몬드 막을 코팅하고 있으나 WC-Co 기판표면의 특성상 문제점으로 인하여 코팅의 어려움이 있다. 이 문제의 해결을 위하여 WC-Co기판위에 중간층을 도입한 후 다이아몬드 막을 증착시키는 새로운 방법을 고려하였으며 중간층의 제조에 무전해 Ni-P도금법을 사용하였다. 무전해도금을 위한 WC-Co기판의 전처리, 무전해도금 및 열처리, 다이아몬드 막 증착의 공정에 대하여 조사하였다. 형성되는 계면의 구조와 성분, 계면간의 밀착력 등을 Scratch Tester, Roughness Tester, SEM/EDS, XRD, Raman Spectroscopy를 사용하여 분석하였다. 무전해도금의 전처리로서 산에 의한 방법과 다이아몬드 분말에 의한 방법을 사용하였으며 두 경우에 모두 WC-Co기판의 표면조도의 감소, 표면 Co성분의 감소, 그리고 밀착력 저하가 관찰되었다. 무전해도금층의 열처리시 영향을 조사하였으며 온도 증가에 따라 Ni 결정이 형성되며 이로 인하여 도금의 밀착력이 증가되며 Ni 결정이 성장함을 관찰하였다. 또한 열처리된 Ni-P도금 위에서 다이아몬드막 증착 실험을 실시하였으며 증착온도를 증가시킴에 따라 다이아몬드 형성이 증가되어 $800^{\circ}C$일때 양호한 다이아몬드 막을 얻을 수 있었다. 본 연구의 방법 및 실험조건은 WC-Co를 비롯하여 다이아몬드 막 형성이 어려운 소재들의 코팅에 효과적으로 이용될 수 있다.

• 센서학회지
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• 제12권2호
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• pp.66-71
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• 2003

Pt/AlGaN Schottky-type UV photodetectors were designed and fabricated. A low-temperature AlGaN interlayer buffer was grown between the AlGaN and GaN film in the diode structure epitaxy to obtain crack-free AlGaN active layers. A comparison was then made of the structural, electrical, and optical characteristics of two different diodes: one with an AlGaN($0.5\;{\mu}m$)/n+-GaN(2 nm) structure (type 1) and the other with an AlGaN($0.5\;{\mu}m$)/AlGaN interlayer($150\;{\AA}$)/n+-GaN($3\;{\mu}m$) structure(type 2). A crack-free AlGaN film was obtained by the insertion of a low-temperature AlGaN interlayer with an aluminum mole fraction of 26% into the $Al_xGa_{1-x}N$ layer. The fabricated Pt/$Al_{0.33}Ga_{0.67}N$ photodetector had a leakage current of 1 nA for the type 1 diode and $0.1\;{\mu}A$ for the type 2 diode at a reverse bias of -5 V. For the photoresponse measurement, the type 2 diode exhibited a cut-off wavelength of 300 nm, prominent responsivity of 0.15 A/W at 280 nm, and UV-visible extinction ratio of $1.5{\times}10^4$. Accordingly, the Pt/$Al_{0.33}Ga_{0.67}N$ Schottky-type ultraviolet photodetector with an AlGaN interlayer exhibited superior electrical and optical characteristics and improved UV detecting properties.