• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.27-33
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• 2016

Phenolic resin has excellent heat resistance and good mechanical properties as a thermosetting resin. However, its thermosetting characteristics cause it to produce a non-recyclable waste in the form of sprue and runner which is discarded and represents up to 15~20% of the overall products. Forty thousand tons of phenolic resin sprue and runner are disposed of (annually). The (annual) cost of such domestic waste disposal is calculated to be 20 billion won. In this study, discarded phenol resin scraps were pulverized and treated by silanes to improve their interfacial adhesion with HDPE. The sizes of the pulverized pulverulent bodies and fine particles were (100um~1000um) and (1~100um), respectively. The pulverized phenol resin was treated with 3-(methacryloyloxy) propyltrimethoxysilane and vinyltrimethoxy silane and the changes in its characteristics were evaluated. The thermal properties were evaluated by DSC and HDT. The mechanical properties were assessed by a notched Izod impact strength tester. When the silane treated phenol resin was added, the heat distortion temperature of HDPE increased from $77^{\circ}C$ to $96^{\circ}C$ and its crystallinity and crystallization temperature also increased. Finally, its impact strength and tensile strength increased by 20% and 50%, respectively, in comparison with the non-treated phenol resin.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.