• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.6
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• pp.4007-4012
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• 2014

This study examined the fabrication and thermal properties of fumed silica/ceramic wool inorganic composites. A predetermined quantity of fumed silica and ceramic wool was mixed uniformly into a slurry state and stabilized in the mold at room temperature, and converted to a massive foamed body through a complete drying process at $150^{\circ}C$. Although the samples without polyvinyl alcohol (PVA) as an interfacial adhesive showed a bulk density of 0.6-0.8 $g/cm^3$ in the range, 10-70wt% fumed silica, those samples with 3wt% PVA exhibited remarkably lower bulk densities with enhanced mechanical and thermal insulation properties, without thermal cracking even above $800^{\circ}C$. The K-factor of the samples was lower in proportion to the fumed silica contents, showing good thermal insulation properties of ca. 0.08 $W/m^{\circ}K$ at $500^{\circ}C$ for the sample with 30wt% fumed silica.

• Composites Research
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• v.23 no.4
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• pp.35-43
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• 2010

The purpose of this paper is to develop a Hybrid Fiber-reinforced High Strength Lightweight Cementitious Composite (HFSLCC) incorporated with lightweight filler and hybrid fibers for lightness and high ductility. Optimal ingredients and mixture proportion were determined on the basis of the micromechanical analysis and the steady-state cracking theory considering the fracture characteristics of matrix and the interfacial properties between fibers and matrix. Then 4 mixture proportions were determined according to the type and amount of fibers and the experiment was performed to evaluate the mechanical performance of those. The HFSLCC showed 3% of tensile strain, 4.2MPa of ultimate tensile stress, 57MPa of compressive strength and $1,660kg/m^3$ of bulk density. The mechanical performance of HFSLCC incorporated with PVA fibers of 1.0 Vol.% and PE fibers of 0.5 Vol.% is similar to those of the HFSLCC incorporated with fibers of 2.0 Vol.%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.