• 한국표면공학회지
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• 제52권4호
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• pp.203-210
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• 2019

In this work, anodizing behavior of 6xxx series aluminum alloys was studied under constant current density and constant voltage conditions in 20% sulfuric acid solution by V-t curves, I-t curves, thickness measurement, observations of surface appearance and cross-sectional observation of anodizing films. The film growth rate of the anodizing films on Al6063, Al6061 and Al6082 obtained at 20 V were $0.63{\mu}m/min$. $0.46{\mu}m/min$ and $0.38{\mu}m/min$, respectively. Time to the initiation of imperfections at the oxide/substrate interface under constant current condition was shortened and colors of anodizing films became darker with the amount of alloying elements in 6xxx series aluminum alloys. Based upon the experimental results obtained in this work, it is concluded that maximum anodizing film thickness without interfacial defects is reduced with increasing amount of alloying elements and brighter anodizing films can be obtained by decreasing amount of alloying elements in the aluminum alloys.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.428-432
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• 2012

Polyamidimide (PAI)-colloidal silica (CS) nanohybrid films were synthesized by an advanced sol-gel process. The synthesized PAI-CS hybrid films have a uniform and stable chemical bonding and there is no interfacial defects observed by TEM. The thermal degradation ratio of PAI-CS (10 wt%) hybrid films is delayed by 100 ℃ compared with pure PAI sample determined by on set temperature range in TGA. The dielectric constant of PAI-CS (10 wt%) hybrid films decreases with increasing CS content up to about 5 wt% but increases at higher CS content, which is not explained simply by effective medium therories (EMT). The duration time of PAI-CS (10 wt%) hybrid coil is 38 sec, which is very longer than that of pure PAI coil sample. The PAI-CS (10 wt%) hybrid film has a higher breakdown voltage resistance than the pure PAI film at surge environment and exhibits superior heat resistance. The PAI-CS (10 wt%) sample shows the advanced and stable thermal emission properties in transformer module compared with the pure PAI sample. This result illustrates that the advanced thermal conductivity and expansion properties of PAI-CS sample in the case of appropriate sol-gel processes brings the stable thermal emission in transformer system. Therefore, new PAI-CS hybrid samples with such stable thermal emission properties are expected to be used as a high functional coating application in ET, IT and electric power products.

• Elastomers and Composites
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• 제48권3호
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• pp.216-220
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• 2013

본 연구에서는 목분-고분자 복합체(Wood Flour-Polymer Composite, WPC)의 상분리 특성을 조사하고 이를 토대로 목분함량에 따른 WPC의 기계적 물성 변화에 관한 원인을 규명하였다. 이를 위해 고분자 매트릭스로 폴리프로필렌을 사용하여 서로 다른 함량의 목분을 갖는 시편을 제조하였다. 서로 다른 목분 함량을 갖는 시편들의 DSC thermogram으로부터 목분 함량에 따른 고분자 PP의 결정화 경향과 $T_m$ 경향을 분석하였다. 목분 함량이 증가함에 따라 고분자 PP의 결정량 및 $T_m$값 모두 감소하다 다시 증가하는 결과를 나타내었다. 이로부터 낮은 목분 함량에서는 목분이 매트릭스인 고분자 내에 분산되어 있으나 일정 목분 함량이상에서는 WPC의 매트릭스인 PP와 목분사이에 상분리가 일어남을 확인할 수 있었다. 한편, WPC 시편의 인장강도는 목분 함량이 증가할수록 감소하는 결과를 나타내었다. 낮은 목분 함량에서는 고분자에 분산된 목분과 고분자 사이에서의 낮은 계면 결합력과 시편내에서 강도를 높이는 역할을 하는 결정량의 감소가, 높은 목분 함량에서는 PP와 목분사이에서의 상분리로 인한 계면 결함이 WPC 시편의 인장강도를 목분함량 증가에 따라 지속적으로 감소시키는 원인이 되는 것으로 파악되었다. WPC 시편의 충격강도는 목분 함량이 증가함에 따라 증가하다가 목분 함량이 20%인 경우 최고값을 나타내며, 그 이후 다시 감소하는 경향을 나타내었는데, 낮은 목분 함량에서는 목분 함량이 증가할수록 시편의 결정량이 감소하므로 시편의 취성 감소에 의해 충격강도가 향상되나, 높은 목분 함량에서는 고분자 매트릭스와 목분 사이의 상분리로 인해 다시 충격강도가 저하되기 때문인 것으로 판단된다.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2004년도 학술대회지
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• pp.347-351
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• 2004

[ $Si_3N_4$ ] composites have been extensively studied for engineering ceramics, because it has excellent room and high temperature strength, wear resistance properties, good resistance to oxidation, and good thermal and chemical stability. In the present work, carbon short fiber reinforced $Si_3N_4$ ceramics were fabricated by hot press method in $N_2$ atmosphere at $1800^{\circ}C$ using $Al_2O_3\;and\;Y_2O_3$ as sintering additives. Content of carbon short fiber was $0\%,\;0.1\%\;and\;0.3\%$. The composites were evaluated in terms of density, flexural strength and elastic modulus through the 3-point bending test at room temperature. Also, The wear behavior was determined by the pin on disk wear tester using silicon nitride ball. Experimental density and flexural strength decreased with increasing content of carbon fiber. But specific modulus increased with increasing content of carbon fiber. In addition, friction coefficient and specific wear loss decreased with increasing content of carbon short fiber by reason of interfacial defects between matrix and fiber.

• 한국재료학회지
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• 제4권1호
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• pp.31-36
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• 1994

Mn-Zn ferrite를 가공하여 VCR헤드의 제조과정에서 비자성체 gap용 $SiO_{2}$증착층과 유리와의 접합시 유리내에 기포 형태의 결함이 발생하는 경우가 있다. 기판의 조도나 $SiO_{2}$의 증착속도의 영향을 분석한 결과, 기포의 생성원인이 $SiO_{2}$ 증착층과 접합유리의 융착시 계면에 존재하는 요철의 불완전한 충진에 의한 것으로 나타났다. 따라서 이러한 기포생성을 억제시키는 위해서는 기판을 최대한 경면 연마시켜 표면조도를 작게하고 $SiO_{2}$증착속도를 조절함으로써 $SiO_{2}$증착층의 표면조도를 작게하여 유리 융착시 계변의 요철 크기를 작게해야 한다. 기판을 0.05$\mu\textrm{m}$알루미나 분말로 경면연마시키고, 10% Osub 2/분압을 갖는 Ar plasma상태하로 조절된 증착속도로 즈악된 $SiO_{2}$증착층과 접합유리의 융착시 기포가 전혀 발생치 않았다.

• 폴리머
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• 제34권2호
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• pp.108-115
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• 2010

본 연구는 MWCNT로 보강된 SBR 나노복합재료를 컴파운딩법(compounding)으로 제조하여 산 처리된 MWCNT와 커플링제 상호간의 물리적 화학적 특성을 조사하였다. 황산과 질산으로 산화된 MWCNT는 FT-IR 분석 결과 -COOH로 기능화됨을 확인하였고, Raman 분석 결과 표면의 defect 존재와 disorder됨을 확인하였다. 또한, 제조된 SBR 복합재료의 가황 특성, 전기적 열적 특성 및 기계적 특성을 비교 평가하였다. 그 결과 산 처리된 MWCNT와 커플링제와의 상호 결합력으로 인해 기계적 물성은 상대적으로 증가하였으나, 전기적 열적 특성은 MWCNT의 defects나 disorder의 형성과 chopping으로 인해 감소됨을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Journal of Information Display
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• 제12권4호
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• pp.209-212
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• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.