• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.310-313
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• 2002

Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.61-61
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• 2010

In the present work, we present the optimized the hybrid structures of carbon nanotubes (CNTs) and metal nanocomposites including Cu, Al, Co and Ni using the first principle calculations based on the density functional theory. Introduction of CNTs into a metal matrix has been considered to improve the mechanical properties of the metal matrix. However, the binding energy between metals and pristine CNTs wall is known to be so small that the interfacial slip between CNTs and the matrix occurs at a relatively low external stress. The application of defective or functionalized CNTs has thus attracted great attention to enhance the interfacial strength of CNT/metal nanocomposites. Herein, we design the various hybrid structures of the single wall CNT/metal complexes and characterize the interaction between single wall CNTs and various metals such as Cu, Al, Co or Ni. First, differences in the binding energies or electronic structures of the CNT/metal complexes with the topological defects, such as the Stone-Wales and vacancy, are compared. Second, the characteristics of functionalized CNTs with various surface functional groups, such as -O, -COOH, -OH interacting with metals are investigated.We found that the binding energy can be enhanced by the surface functional group including oxygen since the oxygen atom can mediate and reinforce the interaction between carbon and metal. The binding energy is also greatly increased when it is absorbed on the defects of CNTs. These results strongly support the recent experimental work which suggested the oxygen on the interface playing an important role in the excellent mechanical properties of the CNT-Cu composite[1].

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.364-367
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• 2007

In nano-imprint lithography (NIL) process, which has shown to be a good method to fabricate polymeric patterns, several kinds of pattern defects due to thermal effects during polymer flow and mold release operation have been reported. A typical defect in NIL process with high aspect ratio and low resist thickness pattern is a resist fracture during the mold release operation. It seems due to interfacial adhesion between polymer and mold. However, in the present investigation, FEM simulation of NIL molding process was carried out to predict the defects of the polymer pattern and to optimize the process by FEA. The embossing operation in NIL process was investigated in detail by FEM. From the analytical results, it was found that the lateral flow of polymer resin and the applied pressure in the embossing operation induce the weld line and the drastic lateral strain at the edge of pattern. It was also shown that the low polymer-thickness result in the delamination of polymer from the substrate. It seems that the above phenomena cause the defects of the final polymer pattern. To reduce the defect, it is important to check the initial resin thickness.

• Tribology and Lubricants
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• v.34 no.3
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• pp.115-122
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• 2018

Chemical mechanical polishing (CMP) is a hybrid processing method in which the surface of a wafer is planarized by chemical and mechanical material removal. Since mechanical material removal in CMP is caused by the rolling or sliding of abrasive particles, interfacial friction during processing greatly influences the CMP results. In this paper, the trend of tribology research on CMP process is discussed. First, various friction force monitoring methods are introduced, and three elements in the CMP tribo-system are defined based on the material removal mechanism of the CMP process. Tribological studies on the CMP process include studies of interfacial friction due to changes in consumables such as slurry and polishing pad, modeling of material removal rate using contact mechanics, and stick-slip friction and scratches. The real area of contact (RCA) between the polishing pad and wafer also has a significant influence on the polishing result in the CMP process, and many researchers have studied RCA control and prediction. Despite the fact that the CMP process is a hybrid process using chemical reactions and mechanical material removal, tribological studies to date have yet to clarify the effects of chemical reactions on interfacial friction. In addition, it is necessary to clarify the relationship between the interface friction phenomenon and physical surface defects in CMP, and the cause of their occurrence.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.263-266
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• 1997

We studied an interfacial characteristics of $In_{0.1}Ga_{0.9}As$/ GaAs by photoreflectance (PR) measurement at room temperature. With increasing thickness of epitaxial layer, Franz-Keldysh oscillation (FKO) periods of PR signals were decreased, and interfacial electric field was decreased. This can be explained by the increases of defects due to lattice mismatch near the heterointerface between InGaAs and GaAs. For the thickness of epitaxial layer thinner than the 300$\AA$, InGaAs epitazial layer closed to critical thickness and increased strain, and then the bandgap energy shifted high greatly.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.120-130
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• 1995

To analyze the mechanical property and the residual stress in functionally gradient materials(FGMs), disctype TZP/Ni-and TZP/SUS304-FGM were hot pressed using powder metallurgy compared with directly bonded materials which were fabricated by the same method. The continuous interface and the microstructure of FGMs were characterized by EPMA, WDS, optical microscope and SEM. By fractography, the fracture behavior of FGMs was mainly influenced by the defects which originated from the fabrication process. And the defectlike cracks in the FGMs induced by the residual stress have been shown to cause failure. This fact has well corresponded to the analysis of the residual stress distribution by Finite Element Method (FEM). The residual stress generated on the interface (between each layer, and matrix and second phase, respectively) were dominantly influenced on the sintering temperature and the material constants. As a consequence, the interfacial stability and the relaxation of residual stress could be obtained through compositional gradient.

• Smart Structures and Systems
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• v.19 no.2
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• pp.181-194
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• 2017

In order to investigate the interface debonding defects detection mechanism between steel tube and concrete core of concrete-filled steel tubes (CFSTs), multi-physical fields coupling finite element models constituted of a surface mounted Piezoceramic Lead Zirconate Titanate (PZT) actuator, an embedded PZT sensor and a circular cross section of CFST column are established. The stress wave initiation and propagation induced by the PZT actuator under sinusoidal and sweep frequency excitations are simulated with a two dimensional (2D) plain strain analysis and the difference of stress wave fields close to the interface debonding defect and within the cross section of the CFST members without and with debonding defects are compared in time domain. The linearity and stability of the embedded PZT response under sinusoidal signals with different frequencies and amplitudes are validated. The relationship between the amplitudes of stress wave and the measurement distances in a healthy CFST cross section is also studied. Meanwhile, the responses of PZT sensor under both sinusoidal and sweep frequency excitations are compared and the influence of debonding defect depth and length on the output voltage is also illustrated. The results show the output voltage signal amplitude and head wave arriving time are affected significantly by debonding defects. Moreover, the measurement of PZT sensor is sensitive to the initiation of interface debonding defects. Furthermore, wavelet packet analysis on the voltage signal under sweep frequency excitations is carried out and a normalized wavelet packet energy index (NWPEI) is defined to identify the interfacial debonding. The value of NWPEI attenuates with the increase in the dimension of debonding defects. The results help understand the debonding defects detection mechanism for circular CFST members with PZT technique.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.5-11
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• 2018

Direct energy deposition (DED) technique uses a laser heat source to deposit a metal layer on a substrate. Many researchers have used the DED technique to study the hardfacing of molds and dies. The aim of this study is to obtain high surface hardness and a sound bonding between the AISI M4 deposits and a substrate utilizing a mixed powder that contains M4 and AISI P21 powders. To prevent interfacial cracks between the M4 deposits and the substrate, the mixed powder is pre-deposited onto a JIS S45C substrate, before the deposition of M4 powders. Interfacial defects occurring between the deposits and substrate and changes in the microhardness of the intermediate layer were examined. Observations of the cross-sections of deposited specimens revealed that the interfacial cracks appeared in samples with one and two mixed layers regardless of the mixture ratio. However, the crack was removed by increasing the mixture ratio and the number of intermediate layers. Meanwhile, the microhardness in the mixed layer was found to decrease with increasing ratio of P21 powder in the mixture and that in the upper region of the deposited layers was approximately 800 HV, which was attributed to various alloying elements in the M4 powder.