• Title/Summary/Keyword: interface treatment

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Effects of anaerobic sealing agents on preload maintenance of screw-retained implant prosthesis with surface of screws (임플란트 보철물 나사의 전하중 유지에 나사 표면에 따른 혐기성 나사 고정제의 효과)

  • Ryu, Seung-Beom;Heo, Seong-Joo;Koak, Jai-Young;Kim, Seong-Kyun
    • The Journal of Korean Academy of Prosthodontics
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    • v.58 no.2
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    • pp.103-109
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    • 2020
  • Purpose: The purpose of this study was to evaluate the preload maintenance of the retaining screw when using anaerobic sealing agents in implant fixture and abutment components. Specifically, the study examines the effects of anaerobic sealing agents on different types of screws. Materials and methods: External hexagon implants made of titanium and anti-rotational abutments were used. Titanium abutment screws and ebony abutment screws from the same manufacturer were used. The experiment was divided into four groups (n = 10 in each group). In the control group, no sealing agent was used at the implant fixture and abutment screw interface. All abutment screws were tightened according to the manufacturer's recommended torque (30 N.cm). After 24 hours, the removal torque (detorque) of each screw was measured using a digital torque gauge device. The data were analyzed by two-way ANOVA test according to normality distribution satisfaction. Results: Looking at the results for each group, titanium screws and no treatment showed detorque values of 20.3 ± 1.6 N.cm. titanium screws and applied anaerobic sealing agent showed detorque values of 32.4 ± 6.7 N.cm. Ebony screws and no treatment showed detorque values of 20.2 ± 1.5 N.cm. ebony screws and applied anaerobic sealing agent showed detorque values of 30.4 ± 4.5 N.cm. Conclusion: The detorque value was higher in the case of using anaerobic sealing agents in both the titanium screw and ebony screw groups. But there was no difference between the two screws.

Interfacial and Mechanical Properties of MGF Reinforced p-DCPD Composites with Surface Treatments (MGF 표면처리에 따른 p-DCPD 복합재료의 계면 및 기계적 특성 연구)

  • Kwon, Dong-Jun;Shin, Pyeong-Su;Kim, Jong-Hyun;Ha, Jung-Chan;Park, Joung-Man
    • Composites Research
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    • v.29 no.5
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    • pp.282-287
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    • 2016
  • p-DCPD (poly dicyclopentadiene) is the resin that the versatile mechanical properties can be changeable via the control of inner monomer and catalysts. In this work, to improve the strength of composites, surface treated MGF (milled glass fiber) was used as an reinforcement in p-DCPD by molybdenum (Mo) catalyst matrix. The optimum concentration of surface treatment was obtained and the cohesion of MGF themselves increased with concentration. In case of 0.2 wt% silane concentration, the maximized mechanical properties of MGF/p-DCPD composite exhibited because of minimized MGF cohesion. When butyl silane showing minimizing cohesion was used as the optimized alkyl length, high tensile and flexure strength exhibited due to the steric hindrance effect among MGFs. Mechanical and their fractured surfaces of MGF/p-DCPD composites was compared for 4 different chemical functional groups. Norbornene functional groups containing similar chemical structure to DCPD matrix exhibited higher interfacial adhesion between MGFs and DCPD matrix.

Fabrication and loss measurement of $P_2O_5-SiO_2$ optical waveguides on Si (Si을 기판으로한 $P_2O_5-SiO_2$ 광도파로의 제작 및 손실측정)

  • 이형종;임기건;정창섭;정환재;김진승
    • Korean Journal of Optics and Photonics
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    • v.3 no.4
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    • pp.258-265
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    • 1992
  • A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

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Characteristic and Adhesive Strength Change by Heat Treatment of the Plasma Sprayed $ZrO_{2}$- Thermal Barrier Coatings(TBC) (플라즈마 용사된 $ZrO_{2}$-단열 코팅층의 특성 및 열처리에 따른 접합강도변화)

  • Kim, Byoung-Hee;Suhr, Dong-Soo
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.505-512
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    • 1998
  • In this study, two-layer thermal barrier coatings composed of plasma sprayed 0.3mm $ZrO_2(8wt% Y_2o_3)$ ceramic coating layer and O.lmm $NiCrAlCoY_20_3$ bond coating layer on AISI 316 were investigated microstructure of the coating, oxidation of the metallic bond coating and adhesive strength to evaluate the durability of coating layer after cyclic and isothermal test at 90$0^{\circ}C$. And quantitative phase analysis of $ZrO_2(8wt% Y_2o_3)$ ceramic coating was performed as a function of thermal exposure time using XRD technique. The results showed that the amount of m - 2rO, phase in the coating was slightly increased with increasing thermal exposure time at 90$0^{\circ}C$. The c/a ratio of t' - $ZrO_2$ in the as-sprayed coating was 1.0099 and slightly increased to 1.0115 after 100 hours heat treatment. It was believed that $Y_2O_3$ in high yttria tetragonaJ(t') was transformed to low yttria tetragonaJ(t) by $Y_2O_3$ diffusion with increasing thermal exposure time. The adhesive strength was gradually decreased as thermal exposure time increased. After the isothermal test, the failure predominantly occured in ceramic coating layer. On the other hand. the specimens after cyclic thermal test were mostly failed at bond coating/ceramic coating interface. The failure was oeeured by decreasing the bond strength between bond coating and oxide scale which were formed by oxidation of the metallic elements within bond coating and by thermal stress due to thermal expansion mismatches between the oxide scale and ceramic coating.

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Effect of tribochemical silica coating on the shear bond strength of rebonded monocrystalline ceramic brackets (단결정형 세라믹 브라켓의 재접착 시 tribochemical silica coating이 전단접착강도에 미치는 영향)

  • Jeon, Young-Mi;Son, Woo-Sung;Kang, Sang-Wook
    • The korean journal of orthodontics
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    • v.40 no.3
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    • pp.184-194
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    • 2010
  • Objective: The purpose of this study was to investigate the effect of tribochemical silica coating on the shear bond strength (SBS) of rebonded ceramic brackets using nano-filled flowable composite resin. Methods: A total of 60 premolars were prepared and divided into 4 equal groups as follows: Tribochemical silica coating (TC) + Transbond XT (XT), TC + Transbond supreme LV (LV), Sandblast treatment (SA) + XT, SA + LV. Treated ceramic brackets were rebonded on the premolars using each adhesive. All samples were tested in shear mode on a universal testing machine. Results: SBS of silica coated groups were high enough for clinical usage (TCLV: 10.82 $\pm$ 1.82 MPa, TCXT: 11.50 $\pm$ 1.72 MPa). But, SBS of the sandblast treated groups had significantly lower values than the tribochemical silica coated groups (SALV, 1.23 $\pm$ 1.16 MPa; SAXT, 1.76 $\pm$ 1.39 MPa; p < 0.05). There was no difference between the shear bond strength by type of adhesive. In the silica coated groups, 77% of the samples showed bonding failure in the adhesive. In the sandblast treated group, all bonding failures occurred at the bracket-adhesive interface. Conclusions: The result of this study suggest that newly introduced nano-filled flowable composite resin and tribochemical silica coating application on debonded ceramic bracket bases can produce appropriate bond strengths for orthodontic bonding.

Reaction Characteristics between In-l5Pb-5Ag Solder and Au/Ni Surface Finish and Reliability Evaluation of Solder Joint (In-l5Pb-5Ag 솔더와 Au/Ni Surface Finish와의 반응 특성 및 접합 신뢰성 평가)

  • 이종현;엄용성;최광성;최병석;윤호경;박흥우;문종태
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.1-9
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    • 2002
  • The metallurgical reaction properties between the pad consisted of 0.5 $\mu\textrm{m}$Au/5 $\mu\textrm{m}$Ni/Cu layers on a conventional ball grid array (BGA) substrate and In-15 (wt.%)Pb-5Ag solder ball were characterized during the reflow process and solid aging. During the reflow process of 1 to 5 minutes, it was observed that thin $AuIn_2$ or Ni-In intermetallic layer was formed at the interface of solder/pad. The dissolution rate of the Au layer into the molten solder was about $2\times 10^{-3}$ $\mu\textrm{m}$/sec which is remarkably low in comparison with a eutectic Sn-37Pb solder. After solid aging treatment for 500 hrs at $130^{\circ}C$, the thickness of $Ni_{28}In_{72}$ intermetallic layer was increased to about 3 $\mu\textrm{m}$ in all the conditions nevertheless the initial reflow time was different. These result show that In atoms in the solder alloy were diffused through the $AuIn_2$ phase to react with underlaying Ni layer during solid aging treatment. From the microstructural observation and shear tests, the reaction properties between In-15Pb-5Ag alloy and Au/Ni surface finish were analyzed not to trigger Au-embrittlement in the solder joints unlike Sn-37Pb composition.

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Characteristic of Ru Thin Film Deposited by ALD

  • Park, Jingyu;Jeon, Heeyoung;Kim, Hyunjung;Kim, Jinho;Jeon, Hyeongtag
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.78-78
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    • 2013
  • Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

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Thermal Behavior and Crystallographic Characteristics of an Epitaxial C49-$TiSi_2$ Phase Formed in the Si (001) Substrate by $N_2$Treatment (Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구)

  • Yang, Jun-Mo;Lee, Wan-Gyu;Park, Tae-Soo;Lee, Tae-Kwon;Kim, Joong-Jung;Kim, Weon;Kim, Ho-Joung;Park, Ju-Chul;Lee, Soun-Young
    • Korean Journal of Materials Research
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    • v.11 no.2
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    • pp.88-93
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    • 2001
  • The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

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A Study on the Release Characteristics During Wafer-Level Lens Molding Using Thermosetting Materials (열경화성 소재를 사용한 웨이퍼 레벨 렌즈 성형 중 이형 특성에 관한 연구)

  • Park, Si-Hwan;Hwang, Yeon;Kim, Dai-Geun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.1
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    • pp.461-467
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    • 2021
  • Among the defect factors that can occur when a wafer-level lens is molded using a thermosetting material, the mold sticking problem of a molded lens during the release process can damage the molded substrate and deform the substrate at the wafer level. An experiment was conducted to examine the factors affecting the demolding force in the lens forming process. The demolding force was examined according to the coating material of the molds. The mold was surface-treated with ITO and Ti, followed by plasma treatment in an O2 atmosphere. A DLC coating was then performed, and the curing and releasability were examined. A coating method for the pull-off experiment was selected based on the results. To measure the demolding force according to the curing process conditions, a method of curing at a constant pressure and a method of curing at a constant position were applied. As a result, the TiO2 surface treatment reduced the release force. When cured by controlling the location, curing shrinkage can reduce the adhesion energy of the interface during curing, resulting in better demolding.

Effects of Dielectric Curing Temperature and T/H Treatment on the Interfacial Adhesion Energies of Ti/PBO for Cu RDL Applications of FOWLP (FOWLP Cu 재배선 적용을 위한 절연층 경화 온도 및 고온/고습 처리가 Ti/PBO 계면접착에너지에 미치는 영향)

  • Kirak Son;Gahui Kim;Young-Bae Park
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.52-59
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    • 2023
  • The effects of dielectric curing temperature and temperature/humidity treatment conditions on the interfacial adhesion energies between Ti diffusion barrier/polybenzoxazole (PBO) dielectric layers were systematically investigated for Cu redistribution layer applications of fan-out wafer level package. The initial interfacial adhesion energies were 16.63, 25.95, 16.58 J/m2 for PBO curing temperatures at 175, 200, and 225 ℃, respectively. X-ray photoelectron spectroscopy analysis showed that there exists a good correlation between the interfacial adhesion energy and the C-O peak area fractions at PBO delaminated surfaces. And the interfacial adhesion energies of samples cured at 200 ℃ decreased to 3.99 J/m2 after 500 h at 85 ℃/85 % relative humidity, possibly due to the weak boundary layer formation inside PBO near Ti/PBO interface.