• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.55-60
• /
• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.

• The Korean Journal of Ceramics
• /
• v.5 no.4
• /
• pp.336-340
• /
• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1352-1354
• /
• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Journal of Technologic Dentistry
• /
• v.27 no.1
• /
• pp.97-104
• /
• 2005

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens, which is 0.8mm in thickness, were fired at 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. It observed oxide film form of the fired specimens with optical microscope and scanning electron microscope (SEM), and chemical formation of them with energy disperse X-ray spectroscopy (EDX). The other specimens, which is 2mm in thickness, were fired at 1,000$^{\circ}C$ with air and vacuum in order to analyze the diffusion behaviors of alloy-porcelain interface by X-ray dot mapping. The results of this study were as follows: 1. The observation of microstructure of specimens by SEM showed that the more Nb content is high, the more much intermediate compound of rich Nb is observed. 2. The surface morphology of oxide film is most dense in 3% Nb. The heat treatment in air constitutes denser oxide film than heat treatment under vacuum. 3. The diffusion behavior of oxide layer by X-ray dot mapping showed that Si, Al of porcelain diffuse toward metal.

• Journal of the Korean Society for Heat Treatment
• /
• v.16 no.5
• /
• pp.253-259
• /
• 2003

In this study, to find out the reason of deterioration in surface roughness of steel and cast iron after Tufftride, it has been investigated on the relation between the surface roughness and various factors such as the evolution of compound layer, surface morphology, and surface hardness, and change of pore ratio in the compound layer during Tufftride at $580^{\circ}C$. It is found that the surface roughness was increased with the evolution of compound layer during Tufftride of steel and cast iron. The change of surface roughness after Tufftride was reduced with decreasing tho content of carbon and cementite ($Fe_3C$) in the materials. in the cast irons, the various shaped graphites that was exposed to the surface should induce the discontinuous growth of the compound layer, and this resulted in the incoherent interfaces between matrix and compound layer and the deterioration of surface roughness. In the steels, the existence of cementites in the matrix resulted in the incoherent interfaces between matrix and compound layer. It is considered that during Tufftride the surface roughness must be mainly influenced by the formation of the incoherent interface between compound layer and matrix that is affected by some factors such as the microstructure, the composition, and the hardness of the matrix.

• Applied Chemistry for Engineering
• /
• v.18 no.5
• /
• pp.506-510
• /
• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Journal of the Korean Society for Heat Treatment
• /
• v.13 no.4
• /
• pp.246-252
• /
• 2000

Stellite 12 alloy-powder was overlaid on 410 stainless steel valve seat using plasma transferred arc(PTA) process. Variation of characteristic of microstructure and hardness of deposit with current(90~150 A) and preheat temperature(R.T.~$400^{\circ}C$) was investigated. Important conclusion obtained are as follows; All welding conditions used produced a sound deposit layer with no defect in single pass welding. The maximum deposit had 4.0~4.8 mm in thickness and its bead width was increased with increase of current and preheat temperature. The deposit showed hypoeutectic microstruture, which was consisting of primary cobalt dendrite and networked $M_7C_3$ type eutectic carbides. The amount of eutectic carbides was decreased and its dendritic secondary arm spacing was increased with increase of current. Hardness of the deposit was decreased with increase of current. Preheat temperature up to $400^{\circ}C$, however, showed little influence on the hardness and microstructure. The hardness was also influenced by diluted Fe content near the interface in addition to microstructure and dendritic secondary arm spacing. Hot hardness at $500^{\circ}C$ showed higher than 300 HV.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.126-126
• /
• 2018

최근 차세대 디스플레이인 flexible 하고 transparent 한 디스플레이 개발이 진행 중 이며, 이러한 디스플레이가 개발 되기 위해 백 플레인으로 사용되는 Thin Film Transistor (TFT) 또한 차세대 디스플레이 못지 않게 연구가 진행 되고 있다. 기존의 무기물을 기반으로 하고 Rigid한 TFT는 현재 많은 곳에 적용이 되어 사람들이 사용 하고 있다. 하지만 이미 시장은 포화상태이며 차세대 디스플레이 컨셉인 flexible 하고 투명한 것과 맞지 않는다. 그래서 유연하며 투명한 특성을 가진 TFT에 대한 연구가 활발히 진행 되고 있으며 많은 성과를 이루었다. 이러한 소자를 이용하여 훗날 Electronic-skin(e-skin)이라 부르는 전자 피부를 활용하여 실시간 모니터링 할 수 있는 헬스 케어 분야 등에 활용 가치 또한 높다. 현재 유연하며 투명한 기판 및 물질 개발에 많은 연구 개발이 진행 되고 있다. 하지만 유연한 기판을 사용하여 TFT를 제작한 후 stress나 bending에 대한 내구성과 안정성, 신뢰성 등이 무기물을 기반으로 한 TFT에 비해 좋지 않은 실정이다. 따라서 유연하며 투명한 기판을 사용한 TFT에 대한 안정성, 신뢰성 등을 확보하여야 한다. 본 연구 에서는 유연한 기판을 사용하여 TFT를 제작 한 후, TFT특성과 안정성을 확보하는 것을 목표로 실험을 진행하였다. 우리는 Mo전극과 Parylene 기판을 사용하여 유연한 TFT소자를 탑 게이트 구조로 제작 하였고 Rigid한 Glass기판 위에 Floating Process를 진행하기 위해 PVA층을 코팅 후 그 위에 Parylene을 CVD로 증착 하고 IGZO를 Sputter를 사용해 증착했다. Parylene은 DI Water 70도에서 Floating 공정을 통해 Rigid 기판에서 탈착 시켰다. 유연한 기판 위에 TFT를 제작 후 bending에 대한 특성 변화 및 안정성에 대한 측정을 실시하였다. Bending에 대한 특성 변화는 우수한 결과가 나왔지만 안정성 측정 중 Negative Bias Stress(NBS) 상에서 비정상적인 On Current Drop 현상이 발생 되었다. Parylene과 Channel층 사이 interface roughness로 인해 charge trap이 되고 이로 인해 On Current Drop 이라는 현상으로 나타났다. 그래서 우리는 Parylene 기판과 Channel 층간의 surface roughness를 개선하기 위한 방법으로 UV Treatment를 사용하였고 시간을 다르게 하여 surface 개선을 진행했다. Treatment 시간을 증가 시킴에 따라 Surface roughness가 많이 좋아 졌으며, Surface를 개선하고자 비정상적인 On Current Drop 현상이 없어졌으며 위 실험으로 Polymer의 surface roughness에 따라 TFT에 대한 안정성에 대한 신뢰성이 확보 될 수 있는 것을 확인 하였다.

• Journal of Surface Science and Engineering
• /
• v.48 no.6
• /
• pp.260-268
• /
• 2015

The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.343-350
• /
• 2003

Using Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ powders prepared by solid state reaction and spray drying method, the nucleation and growth behaviors of superconducting and second phases were investigated during isothermal heat treatment. When the spray drying power was used in contrast with solid state reaction powder, Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2223) phase could be formed at the relatively shot time and second phases were much bigger. Quantitative analysis showed that as the heat treatment time increased, more Bi$_2$Sr$_2$Ca$_2$.$_2$Cu$_3$ $O_{x}$ (2212) changed to 2223 and the major second phase was changed from (Sr,Ca)$_{14}$Cu$_{24}$ $O_{x}$(14:24) to (Sr,Ca)$_2$Cu$_1$ $O_{x}$ (2:l). The superconducting phase formed at the relatively short time 14:24 phase. Following the Bi-free phase of 14:24 Phase, but long time was needed in places far from the 14:24 phase. Following the formation of the 2212 phase near the 14:24 phase, the 2223 phase nucleated preferentially at the interface between the 2212 and 14:24 phases. The preferential nuclcation of 2223 was explained by its structural similarity and low Interfacial energy with both the Bi-free and 2212 Phases.12 Phases.