• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Journal of computational fluids engineering
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• v.12 no.4
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• pp.14-19
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• 2007

We present a direct numerical simulation technique and some preliminary results of the capillary spreading of a droplet containing particles on the solid substrate. We used the level-set method with the continuous surface stress for description of droplet spreading with interfacial tension and employed the discontinuous Galerkin method for the stabilization of the interface advection equation. The distributed Lagrangian-multipliers method has been combined for the implicit treatment of rigid particles. We investigated the droplet spreading by the capillary force and discussed effects of the presence of particles on the spreading behavior. It has been observed that a particulate drop spreads less than the pure liquid drop. The amount of spread of a particulate drop has been found smaller than that of the liquid with effectively the same viscosity as the particulate drop.

• Membrane and Water Treatment
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• v.11 no.5
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• pp.353-361
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• 2020

The present study deals with a numerical investigation of heat and mass transfer in a Sweeping Gas Membrane Distillation (SGMD) used for desalination. The governing equations expressing the conservation of mass, momentum, energy and species with coupled boundary conditions were solved numerically. The slip boundary condition applied on the feed saline solution-hydrophobic membrane interface is taken into consideration showing its effects on profiles and process parameters.The numerical model was validated with available experimental data and was found to be in good agreement particularly when the slip condition is considered. The results of the simulations highlighted the effect of slip boundary condition on the velocity and temperature distributions as well as the process effectiveness. They showed in particular that as the slip length increases, the permeate flux of fresh water and process thermal efficiency rise.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.5-32
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• 2000

MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer, The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X-ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.205-208
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• 2004

초고압 케이블의 절연물질로 널리 사용되고 있는 가교 폴리에틸렌의 전기적 특성은 라멜라결정 조직의 밀도와 라멜라 조직의 성장방향과 밀접한 관련이 있는 것으로 알려지고 있다. 본 연구에서는 반도전 물질에 2종의 첨가제를 이용하여 처방한 3종의 반도전 컴파운드에 대하여 시편 제작 조건에 따른 미세 조직을 제어하여 폴리에틸렌의 미세 조직을 변화시킴으로써, 라멜라 조직이 전기적 특성에 미치는 영향을 분석하였다. 전기적 특성은 AC 절연파괴 전압을 측정하였으며, 미세조직 변화를 조사하기 위하여 TEM 이미지 분석 통하여 라멜라 밀도를 통계적으로 정성 분석하여 상관관계를 규명하였다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.631-632
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• 2006

Cr-C-Ni composites were synthesized in situ from elemental powders of Cr, Ni and C by high energy milling followed by reactive sintering. The milled powders with the grain size in nano-scale were pressed to compacts and sintered. During the following thermal treatment at first the chromium carbide was formed and then the $Cr_3C_2-Ni$ cermets were sintered in one cycle. The interface between the binder phase and the carbide grains of the in situ composite has a good bonding strength as it is not contaminated with oxidation films or other detrimental surface reactions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.460-461
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• 2007

In this paper, we studied the properties of a cable insulate capacity between surfaces with the variation of the interfacial breakdown. As a function of silicon oil, the variation of pressure and interfacial roughness were investigated. The insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were improved by increased interfacial pressure, decreased surface roughness, and oil. And It was shown that interfacial breakdown LSR-XLPE insulators is higher that of EPDM-XLPE.