• Title/Summary/Keyword: interface treatment

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The Photosensitive Insulating Materials as a Passivation Layer on a-Si TFT LCDs

  • Lee, Liu-Chung;Liang, Chung-Yu;Pan, Hsin-Hua;Huang, G.Y.;Gan, Feng-Yuan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.695-698
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    • 2006
  • The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

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A Study on the Enhancement of Emission Efficiency of an Organic EL Devices Using the RF Plasma (RF 플라즈마를 이용한 유기 EL소자의 발광 효율에 관한 연구)

  • 박상무;김형권;신백균;임경범;이덕출
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.9
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    • pp.400-406
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    • 2003
  • Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

Dielectric Strength Enhancement of Extra High Voltage XLPE Power Cable by Micro-Structural Treatment on Semi-Conductive Interface (XLPE 계면에서의 라멜라 구조 제어 및 전기적 특성)

  • Cho, Dae-Hee;Shim, Sung-Ik;Youn, Bok-Hee;Lee, Sang-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.293-296
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    • 2004
  • 초고압 케이블의 절연물질로 널리 사용되고 있는 가교 폴리에틸렌의 전기적 특성은 라멜라 결정 조직의 밀도와 라멜라 조직의 성장방향과 밀접한 관련이 있는 것으로 알려지고 있다. 본 연구에서는 반도전 물질에 2종의 첨가제를 이용하여 처방한 3종의 반도전 컴파운드에 대하여 시편 제작 조건에 따른 미세 조직을 제어하여 폴리에틸렌의 미세 조직을 변화시킴으로써, 라멜라 조직이 전기적 특성에 미치는 영향을 분석하였다. 전기적 특성은 AC 절연파괴 전압을 측정하였으며, 미세 조직 변화를 조사하기 위하여 TEM 이미지 분석 통하여 라멜라 밀도를 통계적으로 정성 분석하여 상관관계를 규명하였다.

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Characteristics of Oxynitride Dielectics Prepared in $N_2O$ Ambient by Furnace (Furnace로 $N_2O$ 분위기에서 성장시킨 Oxynitride 절연막 특성)

  • 이은구;박인길;박진성
    • Journal of the Korean Ceramic Society
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    • v.32 no.1
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    • pp.31-36
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    • 1995
  • (100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

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AN EXPERIMENTAL STUDY OF LASER EFFECTS ON A BASE METAL ALLOY FOR DENTAL CASTING (레이저가 치과주조용 비귀금속합금에 미치는 영향에 관한 실험적 연구)

  • Kim, Kyoung-Nam
    • The Journal of the Korean dental association
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    • v.22 no.9 s.184
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    • pp.781-792
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    • 1984
  • The purpose of this experiment was to study the effects of laser on a base metal alloy for dental casting. In this study, microhardness, corrosion resistance, wear resistance, interaction behavior of metal-ceramic interface, and bond strength were tested before and after the laser treatment for metal-ceramic alloy. The conclusion arised from this study are as follows: 1. The hardness of lased area was higher than that of unlased area. 2. The corrosion resistance was higher in lased specimen than in unlased specimen. 3. the wear resistance was higher in Iased specimen than in unlased specimen. 4. The EDAX showed that Mo, Si and Al were increased in lased surface but Ni and Cr not increased. 5. The SEM of lased area revealed a typical microstructure. 6. The bond strength of lased specimen was increased in 11.2% than of unlased specimen.

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CONSERVATIVE FINITE VOLUME METHOD ON BOUNDARY TREATMENTS FOR FLOW NETWORK SYSTEM ANALYSES (유동망 시스템 해석을 위한 경계처리에 대한 보존형 유한체적법)

  • Hong, S.W.;Kim, C.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03a
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    • pp.19-26
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    • 2008
  • From numerical point of view on flow network system analyses, stagnation properties are not preserved along streamlines across geometric discontinuities. Hence, GJM and DTM using ghost cell and thermodynamic relations are developed to preserve the stagnation enthalpy for the boundaries, such as the interfaces between junction and branches and the interface between two pipes of different cross-sections in serial pipelines. Additionally, the resolving power and efficiencies of the 2nd order Godunov type FV schemes are investigated and estimated by the tracing of the total mechanical energy during calculating rapid transients. Among the approximate Riemann solvers, RoeM is more suitable with the proposed boundary treatments especially for junction than Roe's FDS because of its conservativeness of stagnation enthalpy across geometric discontinuities.

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CONSERVATIVE FINITE VOLUME METHOD ON BOUNDARY TREATMENTS FOR FLOW NETWORK SYSTEM ANALYSES (유동망 시스템 해석을 위한 경계처리에 대한 보존형 유한체적법)

  • Hong, S.W.;Kim, C.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.10a
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    • pp.19-26
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    • 2008
  • From numerical point of view on flow network system analyses, stagnation properties are not preserved along streamlines across geometric discontinuities. Hence, GJM and DTM using ghost cell and thermodynamic relations are developed to preserve the stagnation enthalpy for the boundaries, such as the interfaces between junction and branches and the interface between two pipes of different cross-sections in serial pipelines. Additionally, the resolving power and efficiencies of the 2nd order Godunov type FV schemes are investigated and estimated by the tracing of the total mechanical energy during calculating rapid transients. Among the approximate Riemann solvers, RoeM is more suitable with the proposed boundary treatments especially for junction than Roe's FDS because of its conservativeness of stagnation enthalpy across geometric discontinuities.

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A Study on Strain-Void Growth Mechanism of Dual Phase Steel by Statistical Method (통계적 방법을 이용한 복합조직강의 변형률과 보이드 성장거동에 관한 연구)

  • 오경훈;유용석;오택열
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.533-538
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    • 2000
  • Ductile fracture of dual phase steel begins with void nucleation, at martensite-ferrite interface of deformed martensite particle. In this study, void nucleation, growth, and coalescence under various strain were studied in dual phase steel. Therefore, by means of the heat treatment of low carbon steel, the study deals with void nucleation and growth for ferrite grain size and martensite volume fraction of dual phase steel using statistical method. Void nucleation and growth with increasing strain are shown depend upon the ferrite grain size. Voids volume fraction generally increase as ferrite grain size decease.

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A Consideration of Void Formation Mechanism at Gate Edge Induced by Cobalt Silicidation (코발트 실리사이드에 의한 게이트 측벽 기공 형성에 대한 고찰)

  • 김영철;김기영;김병국
    • Korean Journal of Crystallography
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    • v.12 no.3
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    • pp.166-170
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    • 2001
  • Dopants implanted in silicon substrate affect the reaction between cobalt and silicon substrate. Phosphorous, unlike boron and arsenic, suppressing the reaction between cobalt and silicon induces CoSi formation during a low temperature thermal treatment instead of CoSi₂formation. The CoSi layer should move to the silicon substrate to fill the vacant volume that is generated in the silicon substrate due to the silicon out-diffusion into the cobalt/CoSi interface. The movement of CoSi at gate sidewall spacer region is suppressed by a cohesion between gate oxide and CoSi layers, resulting in a void formation at the gate sidewall spacer edge.

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Nonlinear Time Reversal Focusing and Detection of Fatigue Crack

  • Jeong, Hyun-Jo;Barnard, Dan
    • Journal of the Korean Society for Nondestructive Testing
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    • v.32 no.4
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    • pp.355-361
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    • 2012
  • This paper presents an experimental study on the detection and location of nonlinear scattering source due to the presence of fatigue crack in a laboratory specimen. The proposed technique is based on a combination of nonlinear elastic wave spectroscopy(NEWS) and time reversal(TR) focusing approach. In order to focus on the nonlinear scattering position due to the fatigue crack, we employed only one transmitting transducer and one receiving transducer, taking advantage of long duration of reception signal that includes multiple linear scattering such as mode conversion and boundary reflections. NEWS technique was then used as a pre-treatment of TR for spatial focusing of reemitted second harmonic signal. The robustness of this approach was demonstrated on a cracked specimen and the nonlinear TR focusing behavior is observed on the crack interface from which the second harmonic signal was originated.