• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.753-761
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• 2014

We propose a two-step UV irradiation procedure to fabricate polymer-dispersed liquid crystal (PDLC) films by lamination. During the first UV treatment, before lamination, the UV-curable monomers coated on one film substrate are solidified through photo-polymerization as the phase separation between the liquid crystals and the monomers. Introducing an adhesion-enhancement layer on the other plastic substrate and controlling the UV irradiation conditions ensure that UV-induced cross-linkable functional groups remain on the surfaces of the photo-polymerized layers. Thereby, the adhesion stability between the top and bottom films is much improved during a second (post-lamination) UV treatment by further UV-induced cross-linking at the interface. Because the adhesion-enhancement and PDLC layers prepared by the bar-coating process are solidified before lamination, the PDLC droplet distribution and the cell gap between the two plastic substrates remain uniform under the lamination pressure. This ensures that the voltage-controlled light transmittance is uniform across the entire sample.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Journal of Dental Rehabilitation and Applied Science
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• v.18 no.2
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• pp.127-144
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• 2002

There is an increasing appreciation of the vital role that biomechanics play in the performance of oral implant. The aim of this article is to provide some basic principles that will allow a clinician to formulate a biomechanically valid treatment plan. However, at this point in the history of oral implantology, the clinician should realize that we do not know enough to provide absolute biomechanical rules that will guarantee success of all implants in all situations. To examine the biomechanical questions, one must begin with an analysis of the distribution of biting forcess to implants. Related topics, such as stress transfer to surrounding tissues and interrelationships between bone biology and mechanical loading are major subjects, deserving a separate discussion. Once rigid fixation, angulation, crestal bone level, contour, and gingival health are achieved, stress beyond physiologic limits is the primary cause of initial bone loss around implants. The restoring dentist has specific responsibilities to reduce overload to the bone-implant interface. These include proper diagnosis, leading to a treatment plan designed with adequate retention and form, and progressive loading to improve the amount and density of bone and further reduce the risk of stress beyond physiologic limits. The major remaining factor is the development of occlusal concept in harmony with the rest of the stomagnetic system.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.415-422
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• 2005

Using stretch sensors, a stuttering treatment training device that improve the abnormal breathing of stutterer was designed and developed. To improve stutterer's inadequate breathing method that is one of principal reason of stammering, the device estimates breathing method by checking the changes of the stretch sensor's resistances those are put on the chest and abdomen of user. And a vocal exercise program that carry out exercises only when the user maintains the abdominal breathing was designed. Using a PIC16C711 device that includes an A/D convertor, a main controller was designed and the vocal exercises software was developed using Director and C program with graphic user interface for user convenience. The controller sends the resistance data of sensors to PC through the serial port and the software verifies the breathing method. And the device was designed that the RTS (request to send) pin of serial port in PC is used as a power source so that it can work without any battery or other power source. Three stutterers have carried out the clinical experiments using the implemented device for two months and the results showed it was excellent to alleviate the stuttering.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.518-522
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• 2011

Cartesian grid system has mainly been used in the casting simulation even though it does not nicely represent sloped and curved surfaces. These distorted boundaries cause several problems. A special treatment is necessary to clear these problems. A cut cell method on Cartesian grids has been developed to simulate three-dimensional mold filling Cut cells at a cast-mold interface are generated on Cartesian grids. Governing equations were computed using volume and areas of cast at cut cells. In this paper, we propose a new method that can consider the cutting cells which are cut by casting and mold based on the patial cell treatment (PCT). This method provides a better representation of geometry surface and will be used in the computation of velocities that are defined on the cell boundaries in the Cartesian gird system. Various test examples for several casting process were computed and validated. The analysis results of more accurate fluid flow pattern and less momentum loss owing to the stepped boundaries in the Cartesian grid system were confirmed. We can know the momentum energy at the cut cell is conserved by using the cut cell method. By using the cut cell method. performance of computation gets better because of reducing the whole number of meshes.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.955-961
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• 2002

2.7vol%TiNi/6061 Al composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum hot press. It was investigated by OM, SEM, EPMA and XRD analysis for the behavior of diffusion layer formation on various heat treatment condition. Thickness of diffusion layer was increased proportionally according to heat treatment time. The layer was formed by the mutual diffusion of TiNi and Al. The diffusion rate from TiNi fiber to Al matrix was faster than that of reverse diffusion path. The more diffused layer was formed in Al matrix. The diffusion at interface layer was consisted of $A1_3$Ti, $Al_3$Ni analyzed by EPMA, XRD results.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.249-256
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• 2006

Structural studies have been performed on precipitation hardening found in $L1_2$ ordered ${\gamma}^{\prime}-Ni_3(Al,Ti)$ alloys using transmission electron microscopy. A uniform solid solution of ${\gamma}^{\prime}-L1_2$ ordered phase supersaturated with Ni can be obtained by solution annealing in a suitable temperature range. The ${\gamma}^{\prime}$ phase hardens appreciably by the fine precipitation of disordered ${\gamma}$. The shape of ${\gamma}$ precipitates formed during aging is initially spherical or round-cubic and grow into platelets as aging proceeds. High resolution electron microscopy revealed that the ${\gamma}$ precipitates are perfectly coherent with the matrix ${\gamma}^{\prime}$ as long as the ${\gamma}$-precipitates are plates. The loss of coherency initiates by the introduction of dislocations at the ${\gamma}/{\gamma}^{\prime}$ interface followed by the step formation at the dislocations. The ${\gamma}$ precipitates become globular after the loss of coherency. The strength of ${\gamma}^{\prime}-Ni_3(Al,Ti)$ increases over the temperature range of experiment by the precipitation of fine ${\gamma}$ particles. The peak temperature where a maximum strength was obtained shifted to higher temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.1-9
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• 2007

OSP(organic solderability preservatives) finish has been considered as a very effective process for substituting the metal surface treatment of Ni/Au finish because of lower cost, interface property and environmental issue of OSP finish. However, the discoloration of OSP layer is formed during assembly process consisting of various steps of temperature. The causes of discoloration and the characterization of solder joint were investigated with a degree of discoloration and the assembly process of OSP finished products, which was also compared statistically with that of conventional Ni/Au finished products. As the results, the solution of process trouble for OSP finished products is able to be offered.