• Journal of Adhesion and Interface
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• v.14 no.3
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• pp.146-159
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• 2013

In the present study, stabilized rayon fabrics were prepared from fast isothermal stabilization processes, which were carried out within four minutes at $350^{\circ}C$. The effects of ultrasonic cleaning and chemical pre-treatment on the chemical composition, physical characteristics, X-ray diffraction pattern, thermal stability and shape of the stabilized rayon fabrics were investigated extensively. In order to reduce the weight loss and thermal shrinkage of rayon fabrics occurring during the stabilization process, ultrasonic cleaning was first conducted and then chemical pre-treatments using $NH_4Cl$, $Na_3PO_4$, $H_3PO_4$, and $ZnCl_2$ were performed, respectively. The results indicated that both ultrasonic cleaning and chemical pre-treatment influenced the weight loss, thermal shrinkage, microstructure, carbon content, thermal stability and fabric shape of stabilized rayon fabrics. Also the results depended on the fast-stabilization time and the type of chemical pre-treatment agents used.

• Journal of Adhesion and Interface
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• v.8 no.4
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• pp.23-31
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• 2007

An atmospheric plasma pre-treatment method was applied to EVA foam, Leather (Action), Rubber and Unwoven to improve its contact angle and adhesion using atmospheric plate type reactor. In order to investigate the optimum reaction condition of plasma treatment, type of reaction gas (nitrogen), rate of gas flow (30~100 mL/min), and reaction time (0~30 sec) were examined in a plate plasma reactor. The result of the surface modification with respect to the treatment procedure was characterized by using SEM. Due to a decrease of the contact angle of various materials, the greatest adhesion strength was achieved at optimum condition such as flow rate of 100 mL/min, reaction time of 10 second for an atmosphere nitrogen gas. Consequently, the atmospheric plasma treatment reduced the contact angle of the EVA foam, Leather (Action) and Rubber also resulted in the improvement of the adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1061-1065
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• 1995

To improve dielectric and mechanical properties of insulating composite by plasma surface treatment, new plasma surface treatment process is designed with concentric and hemi-circle electrodes system, the plasma, which is generated between anode and cathode, is induced to the upper side of the electrode system and treats the surface of the insulators. The optimal surface treatment condition is that pressure : 0.5[torr], flux density 100[gauss], discharge current : 500[mA] and treatment time : 3 minutes. The composite filled with glass cloth surface-treated by plasma shows the improvement in electric and mechanical properties, comparing non- and coupling agent-treated samples.

• Journal of Welding and Joining
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• v.18 no.4
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• pp.64-69
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• 2000

Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

• Journal of Surface Science and Engineering
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• v.26 no.2
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• pp.71-81
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• 1993

Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.6-9
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• 2010

Surface properties of polytetrafluoroethylene(PTFE) films fabricated by rf-magnetron sputtering system with UV surface treatment were investigated to increase water contact angle for their hydrophobic property. We found that the surface morphology and water contact angles of PTFE film modified as a function of the UV treatment times using UV-irradiation were influenced. The water contact angle of PTFE film with optimized UV treatment time for 15 minute showed a high hydrophobicity compared with the film without any surface treatment. We thought that it was due to the energy change of PTFE surface with an adhesion improvement to the glass surface as a smoothing a rough surface with needle-shape and/or the enhancement of an interface property as a removing some defects on the surface like a cleaning effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2022.11a
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• pp.89-90
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• 2022

Arc metal spraying is a widely used method for improving the performance of construction structures such as corrosion resistance and electromagnetic wave shielding. However, when arc metal spraying is applied to a concrete structure, adhesion performance may deteriorate. Therefore, the effect of each surface treatment method on the physical properties between the arc metal spray coating and concrete was reviewed by evaluating the deposition efficiency and adhesion performance according to the arc metal spray surface treatment method (surface reinforcing agent, roughening agent, and sealing agent). As a result, it is suggested as an optimal surface treatment condition to induce non-interface failure by using a roughening agent and to improve the properties of concrete and metal coatings by applying a surface reinforcing agent and sealing agent.