• 한국진공학회지
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• 제7권4호
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• pp.334-340
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• 1998

Molecular Beam Epitaxy(MBE)법으로 성장된 $In_xGa_{1-x}As/GaAs$ 에피층에 대해 photoreflectance(PR)실험을 통해 특성을 조사하였다. PR 측정결과 성장된 InxGa1-xAs 에피 층의 띠간격 에너지(E0)신호가 시료의 변형(strain)에 의해 heavy-hole(E0(HH))과 light-hole(E0(LH))로 분리되어 관측되었다. 에피층의 조성과 변형은 각각 시료에서의 Eo(HH) 및 Eo(HH)와 Eo(LH)신호의 에너지 차이를 이용하여 구하였다. 또 160K이하의 온 도에서는 Eo(LH)의 신호가 사라짐을 볼 수 있었다. Franz-Keldysh oscillation(FKO) 피크 로부터 계산되어진 InGaAs/GaAs 계면전장(E)은 In조성의 증가에 따라 $0.75{\times}10^5$V/cm에서 $2.66{\times}10^5$V/cm로 증가하였다. In조성이 x=0.09인 시료에 대한 PR신호의 온도의존성 실험에 서 Varshni계수와 Bose-Einstein계수들을 각각 구하였다.

• 한국재료학회지
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• 제5권6호
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• pp.706-714
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• 1995

원거리 플라즈마 화학증착법을 이용하여 저온에서 이산화규소박막을 제조하였다. 본 연구 에서는 공정변수인 기판의 온도, 반응기체의 조성 및 분압과 플라즈마 전력에 따른 산화막의 재료적인 물성을 평가하였다. XPS결과에서 산화막은 양론비(O/Si=2)보다 약간 적어 실리콘이 많이 함유된 막으로 나타났다. 이 경우 굴절율과 ESR분석에 의해 미결합된 실리콘의 양이 증가함을 알 수 있었다. SIMS분석에 의해 미량의 질소성분이 계면에 존재하는 것과 실리콘 미결함을 관찰하였다. FT-IR로부터 막내 수소량을 정량화하였으며 결합각 분포는 20$0^{\circ}C$이상에서 열산화막과 비슷한 값을 얻었다. 하지만 열산화막에 비해 높은 식각율을 보여 계면 스트레스에 의해 막내의 결합력이 약해진 것으로 생각된다.

• 한국초전도ㆍ저온공학회논문지
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• 제14권4호
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• pp.50-53
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• 2012

This paper describes experimental study on GM-type pulse tube refrigerator (PTR). In a PTR, the pulse tube is only filled with working gas and there exists secondary flow due to a large temperature difference between cold-end and warm-end. The stability of secondary flow is affected by orientation of cold-head and thus, the cooling performance is deteriorated by gas mixing due to secondary flow. In this study, a single stage GM-type pulse tube refrigerator is fabricated and tested. The cooing performance of the fabricated PTR is measured as varying cold-head orientation angle and the results are used as reference data. Then, we divided interior space of pulse tube into three segments, and fixed the various size of screen mesh at interface of each segment to suppress the performance degradation due to secondary flow. For various configuration of pulse tube, no-load test and heat load test are carried out with the fixed experimental condition of charging pressure, operating frequency and orifice valve turns. From experimental results, the fine screen mesh shows the effective suppression of performance degradation for the large orientation angle, but the use of screen mesh cause the loss of cooling capacity rather than the case of no insertion into pulse tube. It should be compromised whether the use of screen mesh in consideration of the installation limitation of a GM-type pulse tube refrigerator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• 마이크로전자및패키징학회지
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• 제17권1호
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• pp.1-7
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• 2010

본 연구에서는 $430^{\circ}C$에서 Bi-10Cu-20Sb-0.3Ni 조성의 솔더 합금과 Cu간의 리플로루 솔더링 시 생성되는 계면 반응층을 분석하였고, 솔더링 시간에 따른 계면 반응층의 성장 속도를 측정하였다. 리플로우 솔더링 후 Bi-10Cu-20Sb-0.3Ni/Cu의 계면 반응층을 분석한 결과, $(Cu,Ni)_2Sb$ 및 $Cu_4Sb$ 금속간 화합물층, 그리고 Bi 조성과 $Cu_4Sb$ 상이 주기적으로 존재하는 아지랑이 형상층이 연속적으로 생성되었다. 또한 120 s까지의 솔더링 시간 영역에서는 계면 반응층의 총 두께가 솔더링 시간에 대해 직선적으로 증가하는 경향이 관찰되었다. 합금원소로 첨가된 Ni은 가장 두꺼운 $Cu_4Sb$ 반응층의 형성에 참여하지 않아 계면 금속간 화합물의 성장 속도를 억제시키는 작용을 나타내지 못했다.

• 대한전기학회논문지
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• 제41권6호
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• 대한전기학회논문지
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• 제41권8호
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.920-926
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• 2011

본 논문에서는 신재생에너지 활용을 위한 다중 추적식 태양광 발전 감성형 LED 가로등을 제안한다. 제안하는 가로등 시스템은 다중 추적방식의 태양광 추적기능을 갖추고 있고 감성형 고품위 LED 램프와 제어회로를 사용하여 센서를 통해 입력되는 온도 및 습도를 기반으로 최대의 일조량을 받을 수 있도록 하였다. 신재생에너지 활용의 핵심 요소인 효율적인 축전지 활용을 위해 충방전 컨트롤러를 개발하였고 원격모니터링 기능 및 제어기능도 구현 하였다. 제안하는 가로등 시스템은 기존 기술에 비하여 추적 동작이 우수하고 에너지효율이 향상되었으며 기존에 개발되지 않았던 추적식 태양광 발전 시스템과 감성형 LED를 결합함으로써 차세대 가로등 시스템의 모델로서의 활용될 수 있게 하였다.

• 한국산학기술학회논문지
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• 제14권9호
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• pp.4117-4123
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• 2013

본 연구에서는 해수용 열교환기의 코팅에 따른 해수 부식특성을 조사하기 위해 실험이 수행되었다. 코팅은 테플론, 전착, 세라믹+실리콘 3종을 선정하였고, 코팅되지 않은 알루미늄 부식과 비교하였다. 해수부식을 가속시키기 위하여 $70^{\circ}C$ 고온의 농도 3.5% 인공해수를 제작하여 9주 동안 침지부식을 시켰다. 침지기간에 따른 코팅의 부식특성 변화를 관찰하기 위하여 임피던스 분광법과 SEM을 이용하였다. Bode 선도에서 얻어진 분극저항으로부터 코팅재질의 내부식성을 확인하였다. 이중코팅은 4주 이후에도 코팅의 내부식성을 유지하였다. 또한 침지기간에 따라서 금속모재와 점착된 코팅면 사이에 블리스터가 발생할 수 있음을 확인하였다.