• Title/Summary/Keyword: interface temperature

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A Study on Development of the High-Power Low-Loss Waveguide Circulator for Ka-band Millimeter-Wave Seeker (밀리미터파대역(Ka-대역)탐색기용 고 전력 저 손실 도파관 순환기 개발에 관한 연구)

  • Jung, Chae-Hyun;Han, Sung-Min;Baek, Jong-Gyun;Lee, Kook-Joo;Park, Chang-Hyun;Kwon, Jun-Beom
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.6
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    • pp.83-88
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    • 2017
  • In this paper, a 3-port waveguide circulator of Ka-band millimeter-wave for isolation between transmit channel and receive channel at high power transmit mode is designed and fabricated for the seeker of the guided missile and circulator performance is verified through the S-parameter, high power and operation temperature test. At the configuration design, interface design between a seeker antenna and the circulator is considered and half-height of standard waveguide is applied for minimum and light weight body. The shape of permanent magnet and ferrite is optimized by simulation and tuning dielectrics at each port are placed for the best performance. In Fc(center frequency)${\pm}1000MHz$, designed waveguide circulator has below -20 dB return loss, below 0.5 dB insertion loss and below -23 dB isolation. It is found that circulator characteristics is similar to design results.

Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors

  • Shin, Hyun-Soo;Ahn, Byung-Du;Rim, You-Seung;Kim, Hyun-Jae
    • Journal of Information Display
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    • v.12 no.4
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    • pp.209-212
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    • 2011
  • The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

Metal Gate Electrode in SiC MOSFET (SiC MOSFET 소자에서 금속 게이트 전극의 이용)

  • Bahng, W.;Song, G.H.;Kim, N.K.;Kim, S.C.;Seo, K.S.;Kim, H.W.;Kim, E.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.358-361
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    • 2002
  • Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

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The structural and dielectric polarization characteristics of composite oxide material in $(Ba Ca)TiO_3$-Zn (복합산화물 $(Ba Ca)TiO_3$-ZnO의 구조적 및 유전분극 특성)

  • 홍경진;임장섭;정우성;민용기;김용주;김태성
    • Electrical & Electronic Materials
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    • v.10 no.3
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    • pp.239-246
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    • 1997
  • The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

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A Study on $TiO_2$ Thin Film by PLD for Buffer Layer between Mesoproso $TiO_2$ and FTO of Dye-sensitized Solar Cell (염료 감응형 태양전지에서 Mesoproso $TiO_2$/FTO 사이에 완충층으로써의 PLD로 증착한 $TiO_2$ 박막에 관한 연구)

  • Song, Sang-Woo;Kim, Sung-Su;Roh, Ji-Hyoung;Lee, Kyung-Ju;Moon, Byung-Moo;Kim, Hyun-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.424-424
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    • 2008
  • Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

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A Study on the Shrinkage Stresses in Polymer Concrete Overlays (폴리머 콘크리트 오버레이의 수축응력에 관한 연구)

  • Jo, Young-Kug;Soh, Yang-Seob
    • Magazine of the Korea Concrete Institute
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    • v.9 no.4
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    • pp.197-205
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    • 1997
  • The shrinkage of polymer concrete overlays to cement concrete causes interface shear, normal and axial stresses in the overlays. These can lead to deterioration of the polymer concrete overlays due to affection of adhesion polymer concrete and cement concrete. The shrinkage stress in the polymer concrete cause it to shorten and the shorting is measured: With the modulus of elasticity of the polymer concrete and strain known the stresses can be calculated. The purpose of this study is to provide the basic data of application of polymer concrete overlays such as bridge decks, highway and airport pavement repair and overlay materials. From the test results. It has been found that depending on the type polymer. overlay thickness, time after curing and temperature. the shrinkage stresses are eliminated by relaxation in time ranging from a few hours to a few days.

Full Stack Platform Design with MongoDB (MongoDB를 활용한 풀 스택 플랫폼 설계)

  • Hong, Sun Hag;Cho, Kyung Soon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.12
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    • pp.152-158
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    • 2016
  • In this paper, we implemented the full stack platform design with MongoDB database of open source platform Raspberry PI 3 model. We experimented the triggering of event driven with acceleration sensor data logging with wireless communication. we captured the image of USB Camera(MS LifeCam cinema) with 28 frames per second under the Linux version of Raspbian Jessie and extended the functionality of wireless communication function with Bluetooth technology for the purpose of making Android Mobile devices interface. And therefore we implemented the functions of the full stack platform for recognizing the event triggering characteristics of detecting the acceleration sensor action and gathering the temperature and humidity sensor data under IoT environment. Especially we used MEAN Stack for developing the performance of full stack platform because the MEAN Stack is more akin to working with MongoDB than what we know of as a database. Afterwards, we would enhance the performance of full stack platform for IoT clouding functionalities and more feasible web design with MongoDB.

Computational Investigation of Turbulent Swirling Flows in Gas Turbine Combustors

  • Benim, A.C.;Escudier, M.P.;Stopford, P.J.;Buchanan, E.;Syed, K.J.
    • International Journal of Fluid Machinery and Systems
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    • v.1 no.1
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    • pp.1-9
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    • 2008
  • In the first part of the paper, Computational Fluid Dynamics analysis of the combusting flow within a high-swirl lean premixed gas turbine combustor and over the $1^{st}$ row nozzle guide vanes is presented. In this analysis, the focus of the investigation is the fluid dynamics at the combustor/turbine interface and its impact on the turbine. The predictions show the existence of a highly-rotating vortex core in the combustor, which is in strong interaction with the turbine nozzle guide vanes. This has been observed to be in agreement with the temperature indicated by thermal paint observations. The results suggest that swirling flow vortex core transition phenomena play a very important role in gas turbine combustors with modern lean-premixed dry low emissions technology. As the predictability of vortex core transition phenomena has not yet been investigated sufficiently, a fundamental validation study has been initiated, with the aim of validating the predictive capability of currently-available modelling procedures for turbulent swirling flows near the sub/supercritical vortex core transition. In the second part of the paper, results are presented which analyse such transitional turbulent swirling flows in two different laboratory water test rigs. It has been observed that turbulent swirling flows of interest are dominated by low-frequency transient motion of coherent structures, which cannot be adequately simulated within the framework of steady-state RANS turbulence modelling approaches. It has been found that useful results can be obtained only by modelling strategies which resolve the three-dimensional, transient motion of coherent structures, and do not assume a scalar turbulent viscosity at all scales. These models include RSM based URANS procedures as well as LES and DES approaches.

Humidity Effects on the Electrical Properties of InP Tunnel MIS Diodes (습도가 InP 턴넬 MIS 소자의 전기적 특성에 미치는 영향)

  • Im, Han-Jo;Jeong, Sang-Gu;Kim, Hyeon-Nam
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.4
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    • pp.52-57
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    • 1984
  • The electrical properties and their instability of InP tunnel MIS diodes fabricated by inserting the chemically grown oxide between metal and n-lnP (100) surface have been in-vestigated. The structure of the gown oxide was the mixture of In2O3 and P2O5, as was other low-temperature grown oxide, and its thickness was estimated to be the order of 200 $A^{\circ}$. The forward and reverse currents increased even with slight heat treatment of diodes in vacuum, and they were reduced when the diodes were exposed to humid ambient. It was discussed that the observed instability in I-V characteristics is due to a change of the physicochemical properties of the oxide film and of the interface states between oxide and InP according to the absorption of H2O.

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Seismic properties of Gas Hydrate using Modeling Technique (모델링 기술을 이용한 심해 Gas Hydrate의 탄성파 특성 연구)

  • Shin, Sung-Ryul;Yeo, Eun-Min;Kim, Chan-Su;Kim, Young-Jun;Park, Keun-Pil;Lee, Ho-Young
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2005.11a
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    • pp.156-157
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    • 2005
  • Gas hydrate is ice-like crystalline lattice, formed at appropriate temperature and pressure, in which gas molecules are trapped. It is worldwide popular interesting subject as a potential energy. In korea, a seismic survey for gas hydrate have performed over the East sea by the KIGAM since 1997. In this paper, we had conducted numerical and physical modeling experiments for seismic properties on gas hydrate with field data which had been acquired over the East sea in 1998. We used a finite difference seismic method with staggered grid for 2-D elastic wave equation to generate synthetic seismograms from multi-channel surface seismic survey, OBC(Ocean Bottom Cable) and VSP(Vertical Seismic Profiling). We developed the seismic physical modeling system which is simulated in the deep sea conditions and acquired the physical model data to the various source-receiver geometry. We carried out seismic complex analysis with the obtained data. In numerical and physical modeling data, we observed the phase reversal phenomenon of reflection wave at interface between the gas hydrate and free gas. In seismic physical modeling, seismic properties of the modeling material agree with the seismic velocity estimated from the travel time of reflection events. We could easily find out AVO(Amplitude Versus Offset) in the reflection strength profile through seismic complex analysis.

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