• Journal of IKEEE
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• v.25 no.1
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• pp.156-167
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• 2021

In this paper, we propose a digital transceiver unit design for in-building of 5G optical repeaters that extends the coverage of 5G mobile communication network services and connects to a stable wireless network in a building. The digital transceiver unit for driving the proposed 5G optical repeater is composed of 4 blocks: a signal processing unit, an RF transceiver unit, an optical input/output unit, and a clock generation unit. The signal processing unit plays an important role, such as a combination of a basic operation of the CPRI interface, a 4-channel antenna signal, and response to external control commands. It also transmits and receives high-quality IQ data through the JESD204B interface. CFR and DPD blocks operate to protect the power amplifier. The RF transmitter/receiver converts the RF signal received from the antenna to AD, is transmitted to the signal processing unit through the JESD204B interface, and DA converts the digital signal transmitted from the signal processing unit to the JESD204B interface and transmits the RF signal to the antenna. The optical input/output unit converts an electric signal into an optical signal and transmits it, and converts the optical signal into an electric signal and receives it. The clock generator suppresses jitter of the synchronous clock supplied from the CPRI interface of the optical input/output unit, and supplies a stable synchronous clock to the signal processing unit and the RF transceiver. Before CPRI connection, a local clock is supplied to operate in a CPRI connection ready state. XCZU9CG-2FFVC900I of Xilinx's MPSoC series was used to evaluate the accuracy of the digital transceiver unit for driving the 5G optical repeater proposed in this paper, and Vivado 2018.3 was used as the design tool. The 5G optical repeater digital transceiver unit proposed in this paper converts the 5G RF signal input to the ADC into digital and transmits it to the JIG through CPRI and outputs the downlink data signal received from the JIG through the CPRI to the DAC. And evaluated the performance. The experimental results showed that flatness, Return Loss, Channel Power, ACLR, EVM, Frequency Error, etc. exceeded the target set value.

• Journal of Internet of Things and Convergence
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• v.10 no.3
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• pp.19-24
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• 2024

Recent advances in large-scale data processing technologies such as big data, cloud computing, and artificial intelligence have increased the demand for high-performance storage devices in data centers and enterprise environments. In particular, the fast data response speed of storage devices is a key factor that determines the overall system performance. Solid state drives (SSDs) based on the Non-Volatile Memory Express (NVMe) interface are gaining traction, but new bottlenecks are emerging in the process of handling large data input and output requests from multiple hosts simultaneously. SSDs typically process host requests by sequentially stacking them in an internal queue. When long transfer length requests are processed first, shorter requests wait longer, increasing the average response time. To solve this problem, data transfer timeout and data partitioning methods have been proposed, but they do not provide a fundamental solution. In this paper, we propose a dual queue based scheduling scheme (DQBS), which manages the data transfer order based on the request order in one queue and the transfer length in the other queue. Then, the request time and transmission length are comprehensively considered to determine the efficient data transmission order. This enables the balanced processing of long and short requests, thus reducing the overall average response time. The simulation results show that the proposed method outperforms the existing sequential processing method. This study presents a scheduling technique that maximizes data transfer efficiency in a high-performance SSD environment, which is expected to contribute to the development of next-generation high-performance storage systems

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Journal of the Society of Disaster Information
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• v.15 no.4
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• pp.524-530
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• 2019

Purpose: In this paper, we construct a detailed three-dimensional interface element using a three-dimensional analysis program, and evaluate the composite behavior stability of the connector by applying physical properties such as the characteristics of general members and those of reinforced members Method: The analytical model uses solid elements, including non-linear material behavior, to complete the modeling of beam structures, circular flanges, bolting systems, etc. to the same dimensions as the design drawing, with each member assembled into one composite behavior linkage. In order to more effectively control the uniformity and mesh generation of other element type contact surfaces, the partitioning was performed. Modeled with 50 carbon steel materials. Results: It shows the displacement, deformation, and stress state of each load stage by the contact adjoining part, load loading part, fixed end part, and vulnerable anticipated part by member, and after displacement, deformation, The effect of the stress distribution was verified and the validity of the design was verified. Conclusion: Therefore, if the design support of the micro pile is determined based on this result, it is possible to identify the Vulnerable Parts of the composite behavior connector and the degree of reinforcement.