• Journal of Electrochemical Science and Technology
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• v.14 no.1
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• pp.85-95
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• 2023

In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li₇La₃Zr₂O₁₂, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10^-3 S cm^-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li⁺ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li⁺ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO₄ (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g^-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.

• Journal of the Korean Society of Safety
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• v.28 no.5
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• pp.5-9
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• 2013

Recently, eco-friendly sources of energy by fuel cells that use hydrogen as an energy source has emerged as the next generation of energy to solve the problem of environmental issues and exhaustion of energy. A solid oxide fuel cell(SOFC) classified based on the type of ion transfer mediator electrolyte has actively being researched. However, the reliability according to the thermal cycle is low during the operation of the fuel cell, and deformation problem comes from the difference in thermal expansion coefficient between the electrode material, the components made of ceramic material is also brittle, which means disadvantages in terms of the strength. Therefore, in this study, considering the states of the manufacturing and operating of SOFC single cells, the stress analyses in the each of the interfacial layer between the anode, electrolyte and the cathode were performed to get the basic data for reliability assessment of SOFC. The obtained results show that von Mises stress according to the thickness direction on operating state occurred maximum stress value in the electrolyte layer. And also the stresses inside the active area on a distance of 1 ${\mu}m$ from the electrode interface were estimated. Futhermore the evaluation was done for the variation of the stress according to the stage of the operation divided into three stages of manufacturing, stack, and operating.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.361-366
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• 2011

By using Monte Carlo simulation method we developed a new molecular simulation software which can be used to predict the thermodynamic properties of organic compounds. Starting from molecular structure and intermolecular potential function, rigorous statistical mechanical principles give a probability distribution for the behavior of a system containing many molecules, which enables us to calculate macroscopic thermodynamic properties of the system. The software developed in this work, cheMC, is based on Windows platform providing with easy access. One can efficiently administrate simulations by using an intuitive interface equipped with visualization tool and chart generation. It is expected that molecular simulations supplement the equation of state approach and will play a more important role in the study of thermodynamic properties.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.139-147
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• 2017

In recent years, non-volatile memory express (NVMe), a new host controller interface standard, has been adapted to overcome performance bottlenecks caused by the acceleration of solid state drives (SSD). Recently, performance breakthrough cases over AHCI based SATA SSDs by adapting NVMe based PCI Express (PCIe) SSD to servers and PCs have been reported. Furthermore, replacing legacy eMMC-flash storage with NVMe based storage is also considered for next generation of mobile devices such as smartphones. The Linux kernel includes drivers for NVMe support, and as the kernel version increases, the implementation of the NVMe driver code has changed. However, mobile devices are often equipped with older versions of Android operating systems (OSes), where the newest features of NVMe drivers are not available. Therefore, different features of different NVMe driver implementations are not well evaluated on Android OSes. In this paper, we analyze the response time of the NVMe driver for various Linux kernel version.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.158-166
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• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.8
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• pp.1637-1642
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• 2015

Next-generation applications using technology IT fused to biological signals from the emotional state to extract a lot of research has been, and the sensitivity of the human sensory functions influences the physiological condition known to be the fact that. In this paper, Propose an Emotional-lighting control algorithm using bio-signals. LED lighting for Emotion light is environmentally friendly and has a high efficiency and long life. In particular, LED lights are different colors represent the possible single light sphere advantages. And, Human sensitivity for determining a more accurate biological signals using EEG was collected using EEG equipment sensitivity was determined to analyze the EEG.

• Journal of Welding and Joining
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• v.26 no.6
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• pp.67-73
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• 2008

Three-dimensional transient simulation of laser-GMA hybrid welding involving multiple physical phenomena is conducted neglecting the interaction effect of laser and arc heat sources. To reproduce the bubble and pore formations in welding process, a new bubble model is suggested and added to the established laser and arc welding models comprehending VOF, Gaussian laser and arc heat source, recoil pressure, arc pressure, electromagnetic force, surface tension, multiple reflection and Fresnel reflection models. Based on the models mentioned above, simulations of laser-GMA hybrid butt welding are carried out and besides the molten pool flow, top and back bead formations could be observed. In addition, the laser induced keyhole formation and bubble generation duo to keyhole collapse are investigated. The bubbles are ejected from the molten pool through its top and bottom regions. However, some of those are entrapped by solid-liquid interface and remained as pores. Those bubbles and pores are intensively generated when the absorption of laser power is largely reduced and consequently the full penetration changes to the partial penetration.