• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.869-873
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• 2001

The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

• 한국통신학회논문지
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• 제35권1A호
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• pp.80-86
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• 2010

본 논문은 게이트 채널 길이 0.13 [${\mu}m$]의 p-MOS 트랜지스터에서 음 바이어스 온도 불안정(NBTI) 전류 스트레스 인가에 의한 게이트유기 드레인 누설(GIDL) 전류를 측정 분석하였다. NBTI 스트레스에 의한 문턱전압의 변화와 문턱전압아래 기울기와 드레인 전류 사이에 상관관계로부터, 소자의 특성 변화의 결과로 열화에 대한 중요한 메카니즘이 계면 상태의 생성과 관련이 있다는 것을 분석하였다. GIDL 전류의 측정 결과로부터, NBTI 스트레스에 기인한 계면상태에서 전자-정공 쌍의 생성이 GIDL 전류의 증가의 결과를 도출하였다. 이런 결과로 부터, 초박막 게이트 산화막 소자에서 NBTI 스트레스 후에 증가된 GIDL 전류를 고려해야만 한다. 또한, 동시에 신뢰성 특성과 직류 소자 성능의 고려가 나노 크기의 CMOS 통신회로 설계의 스트레스 파라미터들에서 반드시 있어야 한다.

• 대한전자공학회논문지
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• 제27권5호
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• pp.775-783
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• 1990

In this paper we implemented the fast thinning unit by modifying the pipeline architecture which was proposed by Stanley R. Sternberg. The unit is useful in preprocessing such as image representation and pattern recognition etc. This unit is composed of interface part, local memory part, address generation part, thinning processing part and control part. In thinning processing part, we shortened the thinning part which performed by means of look up table using window mapping table. Thus we improved the weakness of SAP, in which the number of delay pipeline and window pipeline are equal to image column size. Two independent memorys using tri-state buffer enable the two direction flow of address generated by address generation part. This unit avoids the complexity of architecture and has flexibility of image size by means of simple modification of logic bits.

• 정보저장시스템학회논문집
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• 제7권2호
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• pp.60-64
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• 2011

Chemical mechanical planarization is one of the core processes in fabrication of semiconductors, which are increasingly used for information storage devices like solid state drives. For higher data capacity in storage devices, CMP process is required to show ultimate precision and accuracy. In this work, 2-dimensional finite element models were developed to investigate the effects of the slurry particle impact on microscratch generation and the phenomena generated at pad-particle-wafer contact interface. The results revealed that no plastic deformation and corresponding material removal could be generated by simple impact of slurry particles under real CMP conditions. From the results of finite element simulations, it could be concluded that the pad-particle mixture formed in CMP process would be one of major factors leading to microscratch generation.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.10-15
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• 2013

Adsorption behavior of counterions under a Langmuir monolayer was investigated by sum-frequency generation (SFG) spectroscopy. By comparing SFG spectra of arachidic acid (AA) Langmuir monolayer/water interface with and without added salt, it was found that the simple trivalent cation $La^{3+}$ adsorbed on AA monolayer only when the carboxylic headgroups are charged (deprotonated), implying that counterion adsorption is induced by Coulomb interaction. On the other hand, metal hydroxide complex $Fe(OH)_3$ adsorbed even on a charge-neutral AA monolayer, indicating that the adsorption of iron hydroxide is due to chemical interaction such as covalent or hydrogen bonding to the headgroup of the molecules at the monolayer.

• 비파괴검사학회지
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• 제29권6호
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• pp.534-549
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• 2009

As the thin film technology has emerged in various fields, adhesion of the film interface becomes an important issue in terms of the longevity and durability of thin film devices. Diverse nondestructive methods utilizing acoustic techniques have been developed to assess the interfacial integrity. As an effective technique based on the ultrasonic wave focusing and the surface acoustic wave(SAW) generation, scanning acoustic microscopy(SAM) has been investigated for adhesion evaluation. Visualization of film microstructures and quantification of adhesion weakness levels by SAW dispersion are the recent achievements of SAM. To overcome the limitations in the theoretical dispersion model only suitable for perfectly elastic and isotropic materials, a new model has been more recently developed in consideration of film anisotropy and viscoelasticity and applied to the adhesion evaluation of polymeric films fabricated on semiconductive wafers.

• 한국유체기계학회 논문집
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• 제5권1호
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• pp.13-19
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• 2002

In the present study, a numerical simulation is performed for the flow through a cooling fan. The computation was performed by using commercial code, STAR-CD. A rotating fan was simulated by rotational motions using MRF (Multiple Rotating Reference Frame) in a steady-state analysis and sliding interface (rotating meshes) in an unsteady-state analysis. The results of numerical computation were in good agreement with experimental data. In order to calculate the acoustic signal, the unsteady flow-field was firstly calculated. The acoustics of the fan is calculated by using acoustic analogy based on the unsteady flow-field. The predicted acoustic signal shows the characteristics of the uneven bladed-fan.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2348-2350
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• 1998

The hybrid control system for a wheeled mobile robot with nonholonomic constraints to perform a cluttered environment maneuver is proposed. The proposed hybrid control system consists of a continuous state system for the trajectory control, a discrete state system for the motion and orientation control, and an interface control system for the interaction process between the continuous dynamics and the discrete dynamics The continuous control systems are modeled by the switched systems with the control of driving wheels, and the digital automata for motion control are modeled and implemented by the abstracted motion of mobile robot. The motion control tasks such as path generation, motion planning, and trajectory control for a cluttered environment are investigated as the applications by simulation studies.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.