• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Nuclear Engineering and Technology
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• 제33권2호
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• pp.241-253
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• 2001

Under severe accidents, the pressure and temperature response has an important role for the integrity of a nuclear power plant containment. The history of the pressure and temperature is characterized by the amount and state of steam/air mixture in a containment. Recently, the heat transfer rate to the structure surface is supposed to be increased by the wavy interface formed on condensate film. However, in the calculation by using CONTAIN code, the condensation heat transfer on a containment wall is calculated by assuming the smooth interface and has a tendency to be underestimated for safety. In order to obtain the best- estimate heat transfer calculation, we investigated the condensation heat transfer model in CONTAIN 1.2 code and adopted the new forced convection correlation which is considering wavy interface. By using the film tracking model in CONTAIN 1.2 code, the condensate film is treated to consider the effect of wavy interface. And also, it was carried out to investigate the effect of the different cell modelings - 5-cell and 10-cell modeling - for KNGR(Korean Next Generation Reactor) containment phenomena during a severe accident. The effect of wavy interface on condensate film appears to cause the decrease of peak temperature and pressure response . In order to obtain more adequate results, the proper cell modeling was required to consider the proper flow of steam/air mixture.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• 한국통신학회논문지
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• 제30권2A호
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• pp.137-146
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• 2005

SoC 설계 복잡도의 증가로 인한 설계 비용 감소 및 짧은 time-to-market의 만족을 위해 IP에 기반한 설계 방식이 사용되고 있다. 기존에 설계 검증된 IP를 사용할 경우 시스템 버스와의 통신을 가능하게 하는 인터페이스 회로를 설계해 주어야 하며, 설계 비용을 감소시키기 위해서는 인터페이스 회로의 자동생성이 요구된다. 본 논문에서는 IP프로토콜을 기술하는 방법과 이 기술을 통하여 IP의 프로토콜 제어를 위한 FSM(Finite State Machine)을 생성하여 버스와의 인터페이스 회로를 자동생성하는 방법을 제안한다. 제안한 시스템에서는 프로토콜 분석의 어려움을 줄이기 위해 표준화된 버스의 FSM을 라이브러리화 하였다. 제안된 방법으로 AMBA AHB에 사용되는 슬레이브 형태 IP의 인터페이스 회로를 자동생성한 결과 매뉴얼로 설계한 인터페이스 회로에 비해 면적은 4.5%의 증가를 보였다. 100 Mhz의 버스 동작 속도와 34 Mhz의 슬레이브 모듈의 동작 속도 환경에서 16개의 32 비트 데이터를 버스트 모드로 전송시 latency는 평균 7.1%의 증가를 보였으나, 시스템 버스의 점유는 평균 64.9% 정도로 감소하였다. 본 논문에서 제안한 시스템을 사용하여 시스템 버스의 효율을 증가한 인터페이스 회로를 생성해 낼 수 있다.

• 대한전자공학회논문지SD
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• 제44권2호
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• pp.13-18
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• 2007

본 연구에서는 Lateral DMOS 소자열화 메카니즘이 게이트 산화층의 두께에 따라 다른 것을 측정을 통하여 알 수 있었다. 얇은 산화층 소자는 채널에 생성되는 계면상태와 drift 영역에 포획되는 홀에 의하여 소자가 열화 되고 두꺼운 산화층 소자에서는 채널 영역의 계면상태 생성에 의해서 소자가 열화 되는 것으로 알 수 있었다. 그리고 소자 시뮬레이션을 통하여 다른 열화 메카니즘을 입증할 수 있었다. DC 스트레스에서의 소자 열화와 AC 스트레스에서 소자열화의 비교로부터 AC스트레스에서 소자열화가 적게 되었으며 게이트 펄스의 주파수가 증가할수록 소자열화가 심함을 알 수 있었다. 그 결과로부터 RF LDMOS 에서는 소자열화가 소자설계 및 회로설계에 중요한 변수로 작용할 수 있음을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제46권5호
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• pp.595-604
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• 2014

SILER (Seismic-Initiated event risk mitigation in LEad-cooled Reactors) is a Collaborative Project, partially funded by the European Commission in the $7^{th}$ Framework Programme, aimed at studying the risk associated to seismic-initiated events in Generation IV Heavy Liquid Metal reactors, and developing adequate protection measures. The project started in October 2011, and will run for a duration of three years. The attention of SILER is focused on the evaluation of the effects of earthquakes, with particular regards to beyond-design seismic events, and to the identification of mitigation strategies, acting both on structures and components design. Special efforts are devoted to the development of seismic isolation devices and related interface components. Two reference designs, at the state of development available at the beginning of the project and coming from the $6^{th}$ Framework Programme, have been considered: ELSY (European Lead Fast Reactor) for the Lead Fast Reactors (LFR), and MYRRHA (Multi-purpose hYbrid Research Reactor for High-tech Applications) for the Accelerator-Driven Systems (ADS). This paper describes the main activities and results obtained so far, paying particular attention to the development of seismic isolators, and the interface components which must be installed between the isolated reactor building and the non-isolated parts of the plant, such as the pipe expansion joints and the joint-cover of the seismic gap.

• 한국게임학회 논문지
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• 제10권5호
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• pp.3-13
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• 2010

본 논문은 게임적 행위, 게임적 체험, 게임적 인간이라는 일련의 과정에 주목한다. 현대에서의 게임의 강력한 효과는 게임적 인간이라는 새로운 인간형을 생산하고 있다. 특히 체감형 게임의 형태는 그것의 매체적 특질에 의해 가장 강력한 효과를 발생시킬 수 있다는 점에서 논의의 주요한 대상으로 삼는다. 본 논문에서는 우선 체감형 게임에서의 체험을 분석하고, 체감형 게임이 담지하고 있는 게임-공간의 확장성을 탐구한다. 그리고 체감형 게임이 생성하고 있는 새로운 게임적 인간을 '게임적 신인류'로 개념화한다. 이러한 논의는 체감형 게임이 가속화시킨 다양한 사회적 현상에 대해 새로운 해석을 반영하여 그것의 사회적 의미를 도출해 보기 위한 시도이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 한국전산유체공학회지
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• 제11권1호
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• pp.29-35
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• 2006

A code is developed to analyze a spherically symmetric underwater explosion. The arbitrary Lagrangian-Eulerian(ALE) Godunov scheme for two-phase flow is used to calculate numerical fluxes through moving control surfaces. For detonation gas of TNT and liquid water, the Jones-Wilkins-Lee(JWL) equation of states and the isentropic Tait relation are used respectively. It is suggested to use the Godunov variable to estimate the velocity of a material interface. The code is validated through comparisons with other results on the gas-water shock tube problem. It is shown that the code can handle generation of discontinuity and recovering of continuity in the normal velocity near the material interface during shock waves interact with the material interface. The developed code is applied to analyze a spherically symmetric underwater explosion. Repeated transmissions of shock waves are clearly captured. The calculated period and maximum radius of detonation gas bubble show good agreements with experimental and other numerical results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.