• 제목/요약/키워드: interface state generation

검색결과 74건 처리시간 0.038초

한전(韓電)EMS의 상태추정기법(狀態推定技法)과 MMI 형식(形式) (State Estimation Method and MMI Format of KEPCO EMS)

  • 이경재;유승철;김영한;이효상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.866-869
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    • 1988
  • In the operation of a power system, the security of the system has acquired significant importance to supply electric power of better quality. The State Estimator, a part of security functions, provides a complete real time solution estimate of the steady-state conditions of the power system for use by the Real Time Network Analysis functions. This paper briefly introduces the Fast Decoupled Weighted Least Square State Estimator which is adopted in the KEPCO EMS with features of Man-Machine Interface.

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Finite Element Model to Simulate Crack Propagation Using Interface Elements and Its Verification in Tensile Test

  • Chu, Shi;Yu, Luo;Zhen, Chen
    • Journal of Advanced Research in Ocean Engineering
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    • 제1권1호
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    • pp.36-43
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    • 2015
  • Since the crack generation and its propagation caused by welding defects is one of the main hull damage patterns, the simulation of crack propagation process has an important significance for ship safety. Based on interface element method, a finite element model to simulate crack propagation is studied in the paper. A Lennard-Jones type potential function is employed to define potential energy of the interface element. Tensile tests of steel flat plates with initial central crack are carried out. Surface energy density and spring critical stress that are suitable for the simulation of crack propagation are determined by comparing numerical calculation and tests results. Based on a large number of simulation results, the curve of simulation correction parameter plotted against the crack length is calculated.

효과적인 모델 기반 안드로이드 GUI 테스팅을 위한 GUI 상태 비교 기법 (A GUI State Comparison Technique for Effective Model-based Android GUI Testing)

  • 백영민;홍광의;배두환
    • 정보과학회 논문지
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    • 제42권11호
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    • pp.1386-1396
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    • 2015
  • 안드로이드(Android) 어플리케이션(앱)의 신뢰성과 사용성 검증을 위해, 앱의 기능 검사와 크래쉬(Crash) 탐지 등을 위한 다양한 GUI 테스팅(Graphical User Interface Testing) 기법이 널리 사용되고 있다. 그 중 모델 기반(Model-based) GUI 테스팅 기법은 GUI 모델을 이용해 테스트 케이스를 생성하기 때문에, 기법의 유효성(Effectiveness)은 기반 모델의 정확도에 의존적이다. 따라서 모델 기반 기법의 유효성 향상을 위해서는 테스트 대상 앱의 행위를 충분히 반영할 수 있는 모델 생성 기법이 필요하며, 이를 위해 본 연구에서는 GUI 상태를 정밀하게 구분하는 계층적 화면 비교 기법을 통해 테스팅의 유효성과 효율성을 향상시키고자 한다. 또한, 기존 연구 기법과의 비교 실험을 통해 제안 기법이 유효한 모델의 효율적 생성을 가능하게 함을 확인함으로써, 모델 기반 안드로이드 GUI 테스팅의 성능 향상 가능성을 제시한다.

PSCAD/EMTDC를 이용한 풍력발전시스템의 과도현상 시뮬레이션에 관한 연구 (Study on the Transient Phenomenon Simulation of Wind Power Generation System using PSCAD/EMTDC)

  • 한상근;박민원;유인근
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.309-312
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    • 2002
  • For the purpose of more effective simulation of the utility interactive WPGS(Wind Power Generation System) the SWRW (Simulation method for WPGS using Real Weather condition) is used in this paper, in which those of three topics for the WPGS simulation. user-friendly method, applicability to grid-connection and the utilization of the real weather conditions, are satisfied. The simulation of the WPGS using the real weather condition including components modeling of wind turbine system is achieved by introducing the interface method of a non-linear external parameter and FORTRAN using PSCAD/EMTDC. The simulations of steady-state and transient-state are performed effectively by the introduced simulation method. The generator output and current supplied into utility can be obtained by the steady-state simulation, and THD can be achieved by analyzing the results as well. The transient - state of the WPGS can be analyzed by the simulation results of over cut-out wind speed.

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Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge

  • Kim, Hogyoung;Kim, Min Kyung;Kim, Yeon Jin
    • 한국재료학회지
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    • 제26권10호
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    • pp.556-560
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    • 2016
  • Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

고속용 p-MOSFET에서 NBTI 스트레스에 의한 GIDL 전류의 특성 분석 (The Characteristics Analysis of GIDL current due to the NBTI stress in High Speed p-MOSFET)

  • 이용재;송재열;이종형;한대현
    • 한국정보통신학회논문지
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    • 제13권2호
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    • pp.348-354
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    • 2009
  • 본 논문은 p-MOS 트랜지스터에서 음 바이어스 온도 불안정(NBTI) 전류 스트레스 인가에 의해서 드레인 전류, 문턱 전압, 문턱 전압아래 기울기, 게이트유기 드레인 누설(GIDL) 전류가 변화하는 열화특성을 측정하고 분석하였다. 스트레스 시간, 온도와 전계 의존에 연관된 열화 크기는 실리콘/산화막 계면에서 계면 트랩 생성에 좌우된다는 것으로 나타났다. 문턱 전압의 변화와 문턱 전압아래 기울기 사이에 상관관계로부터, 소자 열화에 대한 중요한 메카니즘이 계면 상태의 생성과 관련이 있다는 것을 분석하였다. GIDL 측정 결과로부터, NBTI 스트레스에 기인한 계면상태에서 전자 정공쌍의 생성이 GIDL 전류의 증가를 가져온다. 그러므로 초박막 게이트 산화막 소자에서 NBTI 스트레스 후에 GIDL 전류 증가를 고려하여 야만 한다. 또한, 신뢰성 특성과 dc 소자 성능을 동시에 고려함이 초고집적 CMOSFET의 스트레스 공학기술에서 상당히 필수불가결하다.

실리콘 질화막의 산화 (The oxidation of silicon nitride layer)

  • 정양희;이영선;박영걸
    • E2M - 전기 전자와 첨단 소재
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    • 제7권3호
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    • pp.231-235
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    • 1994
  • The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

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AUTOSAR 기반의 FlexRay 모듈 개발 (Development of FlexRay Module based on the AUTOSAR)

  • 주홍택;정설영;이명숙
    • 정보처리학회논문지C
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    • 제16C권6호
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    • pp.747-752
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    • 2009
  • AUTOSAR는 자동차용 공개 소프트웨어 플랫폼으로서 차세대 자동차용 네트워크 표준인 FlexRay 모듈을 포함하고 있다. 본 연구는 AUTOSAR 규격을 기반으로 FlexRay 기본 소프트웨어 모듈들인 FlexRay State Manager, FlexRay Transport, FlexRay Interface, FlexRay Transceiver Driver, FlexRay Driver 모듈들을 개발하였다. 또한 개발 과정에서 얻은 설계와 구현 방법을 함께 제시하고, 개발된 모듈들을 마이크로컨트롤러에 탑재하여 동작을 검증하였다.

저온에서 제작된 p-채널 poly-Si TFT의 전기적 스트레스 효과 (Effects of electrical stress on low temperature p-channel poly-Si TFT′s)

  • 백희원;임동규;임석범;정주용;이진민;김영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.324-327
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    • 2000
  • In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

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이종 계면저항 저감 구조를 적용한 그래핀 양자점 기반의 고체 전해질 특성 (Characteristics of Composite Electrolyte with Graphene Quantum Dot for All-Solid-State Lithium Batteries)

  • 황성원
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.114-118
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    • 2022
  • The stabilized all-solid-state battery structure indicate a fundamental alternative to the development of next-generation energy storage devices. Existing liquid electrolyte structures severely limit battery stability, creating safety concerns due to the growth of Li dendrites during rapid charge/discharge cycles. In this study, a low-dimensional graphene quantum dot layer structure was applied to demonstrate stable operating characteristics based on Li+ ion conductivity and excellent electrochemical performance. Transmission electron microscopy analysis was performed to elucidate the microstructure at the interface. The low-dimensional structure of GQD-based solid electrolytes has provided an important strategy for stable scalable solid-state lithium battery applications at room temperature. This study indicates that the low-dimensional carbon structure of Li-GQDs can be an effective approach for the stabilization of solid-state Li matrix architectures.