• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.866-869
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• 1988

In the operation of a power system, the security of the system has acquired significant importance to supply electric power of better quality. The State Estimator, a part of security functions, provides a complete real time solution estimate of the steady-state conditions of the power system for use by the Real Time Network Analysis functions. This paper briefly introduces the Fast Decoupled Weighted Least Square State Estimator which is adopted in the KEPCO EMS with features of Man-Machine Interface.

• Journal of Advanced Research in Ocean Engineering
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• v.1 no.1
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• pp.36-43
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• 2015

Since the crack generation and its propagation caused by welding defects is one of the main hull damage patterns, the simulation of crack propagation process has an important significance for ship safety. Based on interface element method, a finite element model to simulate crack propagation is studied in the paper. A Lennard-Jones type potential function is employed to define potential energy of the interface element. Tensile tests of steel flat plates with initial central crack are carried out. Surface energy density and spring critical stress that are suitable for the simulation of crack propagation are determined by comparing numerical calculation and tests results. Based on a large number of simulation results, the curve of simulation correction parameter plotted against the crack length is calculated.

• Journal of KIISE
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• v.42 no.11
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• pp.1386-1396
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• 2015

Graphical user interface testing (GUI testing) techniques have been widely used to test the functionality of Android applications (apps) and to detect faults for verification of the reliability and usability of apps. To adequately test the behaviors of apps, a number of studies on model-based GUI testing techniques have been performed on Android apps. However, the effectiveness of model-based techniques greatly depends on the quality of the GUI model, because model-based GUI testing techniques generate test inputs based on this model. Therefore, in order to improve testing effectiveness in model-based techniques, accurate and efficient GUI model generation has to be achieved using an improved model generation technique with concrete definition of GUI states. For accurate and efficient generation of a GUI model and test inputs, this study suggests a hierarchical GUI state comparison technique and evaluates this technique through comparison with the existing model-based techniques, considering activities as GUI states. Our results show that the proposed technique outperforms existing approaches and has the potential to improve the performance of model-based GUI testing techniques for Android apps.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.309-312
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• 2002

For the purpose of more effective simulation of the utility interactive WPGS(Wind Power Generation System) the SWRW (Simulation method for WPGS using Real Weather condition) is used in this paper, in which those of three topics for the WPGS simulation. user-friendly method, applicability to grid-connection and the utilization of the real weather conditions, are satisfied. The simulation of the WPGS using the real weather condition including components modeling of wind turbine system is achieved by introducing the interface method of a non-linear external parameter and FORTRAN using PSCAD/EMTDC. The simulations of steady-state and transient-state are performed effectively by the introduced simulation method. The generator output and current supplied into utility can be obtained by the steady-state simulation, and THD can be achieved by analyzing the results as well. The transient - state of the WPGS can be analyzed by the simulation results of over cut-out wind speed.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.2
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• pp.348-354
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• 2009

It has analyzed that the device degradation by NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOSFETs. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is govern by interface traps density at the silicon/oxide interface. from the relation between the variation of threshold voltage and subthreshold slope, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. Therefore, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress engineering of nanoscale CMOSFETs.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• The KIPS Transactions:PartC
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• v.16C no.6
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• pp.747-752
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• 2009

The AUTOSAR(AUTOmotive Open System ARchitecture) is an open software platform for automotive. The AUTOSAR contains the modules of FlexRay that is the next generation automotive network protocol. We have developed the modules including FlexRay State Manager, FlexRay Transport, FlexRay Interface, FlexRay Transceiver Driver and FlexRay Driver based on the standard of the module. This thesis presented not only the result of development but the result of design and implementation. And the developed modules were ported to the microcontroller board and verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.324-327
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• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.114-118
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• 2022

The stabilized all-solid-state battery structure indicate a fundamental alternative to the development of next-generation energy storage devices. Existing liquid electrolyte structures severely limit battery stability, creating safety concerns due to the growth of Li dendrites during rapid charge/discharge cycles. In this study, a low-dimensional graphene quantum dot layer structure was applied to demonstrate stable operating characteristics based on Li+ ion conductivity and excellent electrochemical performance. Transmission electron microscopy analysis was performed to elucidate the microstructure at the interface. The low-dimensional structure of GQD-based solid electrolytes has provided an important strategy for stable scalable solid-state lithium battery applications at room temperature. This study indicates that the low-dimensional carbon structure of Li-GQDs can be an effective approach for the stabilization of solid-state Li matrix architectures.