• 제목/요약/키워드: interface state

검색결과 1,116건 처리시간 0.029초

후속열처리 공정을 이용한 FD Strained-SOI 1T-DRAM 소자의 동작특성 개선에 관한 연구

  • 김민수;오준석;정종완;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.35-35
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    • 2009
  • Capacitorless one transistor dynamic random access memory (1T-DRAM) cells were fabricated on the fully depleted strained-silicon-on-insulator (FD sSOI) and the effects of silicon back interface state on buried oxide (BOX) layer on the memory properties were evaluated. As a result, the fabricated 1T-DRAM cells showed superior electrical characteristics and a large sensing current margin (${\Delta}I_s$) between "1" state and "0" state. The back interface of SOI based capacitorless 1T-DRAM memory cell plays an important role on the memory performance. As the back interface properties were degraded by increase rapid thermal annealing (RTA) process, the performance of 1T-DRAM was also degraded. On the other hand, the properties of back interface and the performance of 1T-DRAM were considerably improved by post RTA annealing process at $450^{\circ}C$ for 30 min in a 2% $H_2/N_2$ ambient.

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Simulation on mass transfer at immiscible liquid interface entrained by single bubble using particle method

  • Dong, Chunhui;Guo, Kailun;Cai, Qinghang;Chen, Ronghua;Tian, Wenxi;Qiu, Suizheng;Su, G.H.
    • Nuclear Engineering and Technology
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    • 제52권6호
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    • pp.1172-1179
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    • 2020
  • As a Lagrangian particle method, Moving Particle Semi-implicit (MPS) method has great capability to capture interface/surface. In recent years, the multiphase flow simulation using MPS method has become one of the important directions of its developments. In this study, some key methods for multiphase flow have been introduced. The interface tension model in multiphase flow is modified to maintain the smooth of the interface and suitable for the three-phase flow. The mass transfer at immiscible liquid interface entrained by single bubble which could occur in Molten Core-Concrete Interaction (MCCI) has been investigated using this particle method. With the increase of bubble size, the height of entrainment column also increases, but the time of film rupture is slightly different. With the increase of density ratio between the two liquids, the height of entrained column decreases significantly due to the decreasing buoyancy of the denser liquid in the lighter liquid. In addition, the larger the interface tension coefficient is, the more rapidly the entrained denser liquid falls. This study validates that the MPS method has shown great performance for multiphase flow simulation. Besides, the influence of physical parameters on the mass transfer at immiscible interface has also been investigated in this study.

Finite Element Model to Simulate Crack Propagation Using Interface Elements and Its Verification in Tensile Test

  • Chu, Shi;Yu, Luo;Zhen, Chen
    • Journal of Advanced Research in Ocean Engineering
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    • 제1권1호
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    • pp.36-43
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    • 2015
  • Since the crack generation and its propagation caused by welding defects is one of the main hull damage patterns, the simulation of crack propagation process has an important significance for ship safety. Based on interface element method, a finite element model to simulate crack propagation is studied in the paper. A Lennard-Jones type potential function is employed to define potential energy of the interface element. Tensile tests of steel flat plates with initial central crack are carried out. Surface energy density and spring critical stress that are suitable for the simulation of crack propagation are determined by comparing numerical calculation and tests results. Based on a large number of simulation results, the curve of simulation correction parameter plotted against the crack length is calculated.

Conductance 법에 의한 $N_{2}Plasma$ 처리한 산화막의 계면상태 밀도에 관한 연구 (The Study on the Interface State Density of $N_{2}Plasma$ Treated Oxide by the Conductance Technique)

  • 성영권;이내인;이승환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.189-192
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    • 1988
  • Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.

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인관과 로봇의 다양한 상호작용을 위한 휴대 매개인터페이스 ‘핸디밧’ (A Portable Mediate Interface 'Handybot' for the Rich Human-Robot Interaction)

  • 황정훈;권동수
    • 제어로봇시스템학회논문지
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    • 제13권8호
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    • pp.735-742
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    • 2007
  • The importance of the interaction capability of a robot increases as the application of a robot is extended to a human's daily life. In this paper, a portable mediate interface Handybot is developed with various interaction channels to be used with an intelligent home service robot. The Handybot has a task-oriented channel of an icon language as well as a verbal interface. It also has an emotional interaction channel that recognizes a user's emotional state from facial expression and speech, transmits that state to the robot, and expresses the robot's emotional state to the user. It is expected that the Handybot will reduce spatial problems that may exist in human-robot interactions, propose a new interaction method, and help creating rich and continuous interactions between human users and robots.

Ti-6Al-4V합금의 고상 확산접합에 관한 연구 (A Study on the Solid State Diffusion Bonding of Ti-6Al-4V Alloy)

  • 강호정;강춘식
    • Journal of Welding and Joining
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    • 제15권6호
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    • pp.32-40
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    • 1997
  • Solid state diffusion bonding is the joining process performed by creep and diffusion, which is accelerated by heating below melting temperature and proper pressing, in vacuum or shielding gas atmosphere. By this process we can obtain sufficient joint which can't be expected from the fusion welding. For Ti-6Al-4V alloy, the optimum solid state diffusion bonding condition and mechanical properties of the joint were found, and micro void morphology at bond interface was observed by SEM. The results of tensile test showed sufficient joint, whose mechanical properties are similar to that of base metal. 850$^{\circ}$C, 3MPa is considered as the optimum bonding condition. Void morphology at interface is long and flat at the initial stage. As the percentage of bonded area increases, however, small and round voids are found. Variation of void shape can be explained as follows. As for the void shrinkage mechanism, at the initial stage, power law creep is the dominant, but diffusion mechanism is dominant when the percentage of bonded area is increased.

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질산산화법을 이용한 SiO2/Si 구조의 계면결함 제거 (Removal of Interface State Density of SiO2/Si Structure by Nitric Acid Oxidation Method)

  • 최재영;김도연;김우병
    • 한국재료학회지
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    • 제28권2호
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    • pp.118-123
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    • 2018
  • 5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

Charge Pumping 방법을 이용한 비휘발성 SNOS FET기억소자의 Si-SiO$_2$계면상태 특성에 관한 연구 (A Study on the Si-SiO$_2$Interface State Characteristics of Nonvolatile SNOS FET Memories using The Charge Pumping Method)

  • 조성두;이상배;문동찬;서광열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.82-85
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    • 1992
  • In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/~5.6${\times}$10$\^$11/cm$\^$-2/~6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

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흙-구조물 경계면의 동역학적해석을 위한 교란상태 모델링 (Disturbed State Modeling for Dynamic Analysis of Soil-Structure Interface)

  • Park, Inn-Joon;Yoo, Ji-Hyeung;Kim, Soo-Il
    • 한국지반공학회논문집
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    • 제16권3호
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    • pp.5-13
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    • 2000
  • 본 연구에서 흙(사질토)-구조물의 경계면에 대한 거동특성을 분석하기 위하여 교란상태개념(DSC)을 수정 및 보완하였다. 제안한 DSC모델에서는 변형중인 재료는 상대적으로 손상되지 않은 상태(RI)와 완전 파괴된 상태(FA)가 혼합되어있다는 가정에 기초를 두고 있다. RI 상태는 HiSS모델을 이용하였고, FA 상태는 한계상태모델을 이용하였다. 이런 DSC 모델을 Biot이론에 기초한 기존 유한요소 프로그램에 접목하였다. 본 연구에서 수저한 유한요소 프로그램을 이용하여 실제 경계면 실험(두 가지 하중조건: 정하중, 동하중)에 대하여 모의실험을 수행하였다. 또한 그 결과와 실내시험결과를 비교 검토하였다. DSC모델을 이용한 유한요소해석은 실제 실내시험 결과와 유사한 경향을 보였다. 본 연구의 결과를 통하여, DSC모델을 흙-구조물 경계면 해석에 비교적 합리적인 결과를 제공한다고 판단된다.

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DSC를 이용한 토목섬유가 포함된 경계면의 변형율 연화 모델 개발 (Development of Strain-softening Model for Geosynthetic-involved Interface Using Disturbed State Concept)

  • Woo, Seo-Min;Park, Jun-Boum;Park, Inn-Joon
    • 한국지반공학회논문집
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    • 제19권5호
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    • pp.223-232
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    • 2003
  • 본 연구에서는 DSC를 이용한 구성방정식을 이용하여 토목섬유 사이의 접촉전단 응력과 변위와의 관계를 모델링하였다. DSC 모델은 두 개의 기준 상태, 즉 상대적으로 손상되지 않은 RI 상태와 완전히 파괴된 FA 상태와 한가지의 교란 함수로 구성된다. 본 모델은 통합된 모델로서, RI 상태를 탄성-완전 소성 모델, 계층적 단일 항복곡면 (HiSS) 모델 등 다양한 모델을 이용하여 모사할 수 있다. 한편 본 모델은 탄성과 소성 변위를 동시에 고려할 수 있다는 장점을 가지고 있다. 4가지의 대형 직접전단 시험으로부터 측정된 자료와 측정자료로부터 도출된 모델 변수를 이용하여 재해석한 결과를 서로 비교하여, 둘 사이의 비교 결과가 상당히 일치함을 발견하였으며, 특히 표면이 매끄러운 지오멤브레인의 접촉면에서는 매우 상관관계를 보였다. 비록 표면이 거친 지오멤브레인이 포함된 접촉면에서는 예측 최대 전단강도가 실험결과와 약간의 차이를 보이기는 하였지만, 전체적으로 본 모델이 최대 전단응력이 나타나는 변위점과 대변형에서의 전단강도를 상당히 정확히 예측하였으며, 이를 통해 본 모델이 변형율 연화 현상을 보이는 접촉면 전단거동의 모델링에 유용함을 확인하였다.