• 제목/요약/키워드: interface energy

검색결과 1,775건 처리시간 0.028초

3G 네트워크와 무선랜 사이 계층적 핸드오프의 네트워크 인터페이스 선택 알고리즘 (Network Interface Selection Algorithm on Vertical Handoff between 3G Networks and WLANs)

  • 석용호;최낙중;최양희
    • 한국정보과학회논문지:정보통신
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    • 제32권2호
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    • pp.203-214
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    • 2005
  • 3G 네트워크와 무선랜의 통합은 서로 간의 보완적 특성으로 인하여 학계나 산업계에서 큰 관심사가 되고 있다. 이 주제는 최근 떠오르는 이슈로서 끊김 없는 계층적 핸드오프 지원은 네트워크 통합에 따른 중요한 관심사 중 하나로 인식되고 있다. 본 논문에서는 강결합 시스템에서의 계층적 핸드오프에서 단말의 에너지 소모를 고려하는 네트워크 인터페이스 선택 알고리즘을 제안한다. 본 저자들이 제안하는 Wise Interface SElection (WISE) 알고리즘은 네트워크와 이동 단말의 협력 하에 네트워크 인터페이스카드의 에너지 특성과 현재 서비스 받고 있는 네트워크 상태, 그리고 송수신하는 데이타 양을 종합적으로 고려하여 이동 단말이 효율적으로 에너지를 소비할 수 있는 적절한 네트워크로 서비스 받을 수 있도록 유도한다. 제안된 계층적 핸드오프 알고리즘은 에너지 소비 패턴을 고려하여 다운링크와 업링크에 대하여 독립적으로 동작한다. 3G 네트워크 인터페이스 만을 사용하는 경우와 무선랜 인터페이스 만을 사용하는 경우에 비해 제안된 WISE 알고리즘이 확연히 더 적은 에너지를 소비하여 이동 단말의 동작 시간을 연장시킬 수 있다는 것을 모의 실험을 통해 증명한다. 또한 TCP 트래픽의 경우 WISE 알고리즘의 비대칭적인 링크의 사용으로 부가적인 처리율 향상을 얻을 수 있다.

고온.고습 환경 하에서의 계면수 변화에 따른 CFRP모자형 단면 부재의 압궤특성 (Collapse Characteristics of CFRP Hat Shaped members According to Variation of Interface Numbers under the Hygrothermal Environment)

  • 양용준;차천석;양인영
    • 한국생산제조학회지
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    • 제18권3호
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    • pp.241-247
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    • 2009
  • It is important to satisfy the requirements and standards for the protections of passengers in a car accident. There are lots of studies on the crushing energy absorption of a structure members in automobiles. We have studied to investigate collapse characteristics and moisture absorption movements of CFRP(Carbon Fiber Reinforced Plastics) hat shaped sectional members when CFRP laminates are under the hygrothermal environment. In particular, the absorbed energy, mean collapse load and deformation mode were analyzed for side members which absorbed most of the collision energy. Variation of CFRP interlaminar numbers is important to increase the energy absorption capability. Therefore we have made a static collapse experiment to research into the difference of absorbed energy and deformation mode between moisture absorbed specimen and non-moisture absorbed.

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면진 원전 면진-비면진구간 연결 배관의 내진성능 평가 (Seismic Performance Evaluation of Piping System Crossing the Isolation Interface in Seismically Isolated NPP)

  • 함대기;박준희;최인길
    • 한국지진공학회논문집
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    • 제18권3호
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    • pp.141-150
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    • 2014
  • A methodology to evaluate the seismic performance of interface piping systems that cross the isolation interface in the seismically isolated nuclear power plant (NPP) was developed. The developed methodology was applied to the safety-related interface piping system to demonstrate the seismic performance of the target piping system. Not only the seismic performance for the design level earthquakes but also the performance for the beyond design level earthquakes were evaluated. Two artificial seismic ground input motions which were matched to the design response spectra and two historical earthquake ground motions were used for the seismic analysis of piping system. The preliminary performance evaluation results show that the excessive relative displacements can occur in the seismically isolated piping system. If the input ground motion contained relatively high energy in the low frequency region, we could find that the stress response of the piping system exceed the allowable stress level even though the intensity of the input ground motion is equal to the design level earthquake. The structural responses and seismic performances of piping system were varied sensitively with respect to the intensities and frequency contents of input ground motions. Therefore, for the application of isolation system to NPPs and the verification of the safety of piping system, the seismic performance of the piping system subjected to the earthquake at the target NPP site should be evaluated firstly.

균열에너지밀도에 의한 이종재 계면균열의 기초적 검토 (A Fundamental Analysis of an Interface Crack by Crack Energy Density)

  • 권오헌;도변승언;서창민;김영호
    • 대한기계학회논문집
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    • 제16권8호
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    • pp.1458-1467
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    • 1992
  • 본 연구에서는 균질재에서의 결과를 토대로 이종재에서도 그 성질이 보존될 것으로 기대되기 때문에 계면균열에서의 CED의 기본적 성질을 검토한후, 각 모드 인자 의 분리법과 평가법을 CED를 통해 제시한다. 또 제시한 수법을 이용하여 우선 탄성 균열 모델에서 유한요소해석을 통해 CED 및 각 모드 인자의 평가 및 기초적 검토를 실시하여 그 유효성을 확인한다.

Effects of surface modification of $Nafion^{(R)}$ Membrane on the Fuel Cell Performance

  • Prasanna, M.;Cho, E.A.;Ha, H.Y.;Hong, S.A.;Oh, I.H.
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 2004년도 추계 학술발표회 논문집
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    • pp.133-138
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    • 2004
  • Proton exchange membrane fuel cell (PEMFC) is considered as a clean and efficient energy conversion det ice for mobile and stationary applications. Anions all the components of the PEMFC, the interface between the electrolyte ,and electrode catalyst plays an important role in determining tile cell performance since the electrochemical reactions take place at the interface in contact with tile reactant gases. Therefore, to increase the interface area and obtain a high-performance PEMFC, surface of the electrolyte membrane was roughened by Ar$^{+}$ beam bombardment. The results imply that by modifying surface of the electrolyte membrane, platinum loading can be reduced significantly without performance loss. To optimize the surface treatment condition, effects of ion dose density on characteristics of the membrane/electrode interface were examined by measuring the cell performance, impedance spectroscopy, and cyclic voltammograms. Surface of the modified membranes were characterized using scanning electron microscopy and FT-IR.R.

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Characterizations of Interface-state Density between Top Silicon and Buried Oxide on Nano-SOI Substrate by using Pseudo-MOSFETs

  • Cho, Won-Ju
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.83-88
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    • 2005
  • The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

다결정 실리콘 웨이퍼 직접제조에 대한 공정변수 영향 (Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer)

  • 위성민;이진석;장보윤;김준수;안영수;윤우영
    • 한국주조공학회지
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    • 제33권4호
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    • pp.157-161
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    • 2013
  • A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.