• 제목/요약/키워드: interface energy

검색결과 1,775건 처리시간 0.026초

초음파 조사에 의한 복합재료의 계면특성의 보강 개선에 관한 연구(1) (A Study to Improve the Interface Strength of Composite Materials by the Radiation of Ultrasonic Energy (1))

  • 이상국;전춘생;김익년
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.813-816
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    • 1988
  • This study is to investigate the adhesive strength of composite material's interface on the experimental methode of tree growth in the material. The results are as follows 1) The irradiations of ultrasonic energy cause the mechanical vibration in the polymer composite materials of fluid state, so then bring about physical dispersion and heat for inorganic materials, being supposed to produce chemical interlinking reaction, decreasing of voids between filler and matrix. 2) As the intensity of ultrasonic energy and its irradiated time are larger, the tree inception and breakdown voltages increase and the tree growing is slower. so we obtain that the interface adhesive force can be strengthened by the irradiation of ultrasonic energy.

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면외전단하중이 작용하는 기능경사재료 접합면 균열의 동적전파에 관한 연구 (Dynamic Propagation of a Interface Crack in Functionally Graded Layers under Anti-plane Shear)

  • 신정우;이영신;김성찬
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2010년도 정기 학술대회
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    • pp.459-464
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    • 2010
  • The dynamic propagation of an interface crack between two dissimilar functionally graded layers under anti-plane shear is analyzed using the integral transform method. The properties of the functionally graded layers vary continuously along the thickness. A constant velocity Yoffe-type moving crack is considered. Fourier transform is used to reduce the problem to a dual integral equation, which is then expressed to a Fredholm integral equation of the second kind. Numerical values on the dynamic energy release rate (DERR) are presented. Followings are helpful to increase of the resistance of the interface crack propagation of FGM: a) increase of the gradient of material properties; b) increase of the material properties from the interface to the upper and lower free surface; c) increase of the thickness of FGM layer. The DERR increases or decreases with increase of the crack moving velocity.

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An interface element for modelling the onset and growth of mixed-mode cracking in aluminium and fibre metal laminates

  • Hashagen, Frank;de Borst, Rene
    • Structural Engineering and Mechanics
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    • 제5권6호
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    • pp.817-837
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    • 1997
  • In the present contribution an interface crack model is introduced which is capable of modelling crack initialisation and growth in aluminium as well as in Fibre Metal Laminates. Interface elements are inserted in a finite element mesh with a yield function which bounds all states of stress in the interface. Hardening occurs after a state of stress exceeds the yield stress of the material. The hardening branch is bounded by the ultimate stress of the material. Thereafter, the state of stress is reduced to zero while the inelastic deformations grow. The energy dissipated by the inelastic deformations in this process equals the fracture energy of the material. The model is applied to calculate the onset and growth of cracking in centre cracked plates made of aluminium and GLARE$^{(R)}$. The impact of the model parameters on the performance of the crack model is studied by comparisons of the numerical results with experimental data.

A Fully Soft Switched Two Quadrant Bidirectional Soft Switching Converter for Ultra Capacitor Interface Circuits

  • Mirzaei, Amin;Farzanehfard, Hosein;Adib, Ehsan;Jusoh, Awang;Salam, Zainal
    • Journal of Power Electronics
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    • 제11권1호
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    • pp.1-9
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    • 2011
  • This paper describes a two quadrant bidirectional soft switching converter for ultra capacitor interface circuits. The total efficiency of the energy storage system in terms of size and cost can be increased by a combination of batteries and ultra capacitors. The required system energy is provided by a battery, while an ultra capacitor is used at high load power pulses. The ultra capacitor voltage changes during charge and discharge modes, therefore an interface circuit is required between the ultra capacitor and the battery. This interface circuit must have good efficiency while providing bidirectional power conversion to capture energy from regenerative braking, downhill driving and the protecting ultra capacitor from immediate discharge. In this paper a fully soft switched two quadrant bidirectional soft switching converter for ultra capacitor interface circuits is introduced and the elements of the converter are reduced considerably. In this paper, zero voltage transient (ZVT) and zero current transient (ZCT) techniques are applied to increase efficiency. The proposed converter acts as a ZCT Buck to charge the ultra capacitor. On the other hand, it acts as a ZVT Boost to discharge the ultra capacitor. A laboratory prototype converter is designed and realized for hybrid vehicle applications. The experimental results presented confirm the theoretical and simulation results.

세포와 흡착면간의 영향을 고려한 흡착형 세포의 3 차원 동적 해석 모델 개발 (Development of Three-dimensional Chemotaxis Model for a Single Crawling Cell, Considering the Interaction between the Cell and Substrate)

  • 송지환;김동철
    • 대한기계학회논문집A
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    • 제35권11호
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    • pp.1355-1360
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    • 2011
  • 흡착형 세포의 이동에 있어 세포와 바닥면간의 상호작용은 매우 중요한 역할을 한다. 본 논문은 주화성에 의한 흡착형 세포의 이동에 있어 세포와 바닥면과의 상호작용에 따른 영향을 보이기 위해 확산계면모델을 바탕으로 한 3 차원의 입체 모델을 제안한다. 세포와 바닥면간의 영향을 표현하기 위해 세포 주위 물질과의 관계를 고려한 경계에너지를 고려하였다. 본 연구에서 적용한 확산계면모델은 경계에너지, 주화성, 확산성을 모두 고려한 다중 메커니즘 모델로서 흡착형 세포이동의 역학적 특성을 정확히 예측하는데 있어 높은 신뢰성을 보일 것이라 기대된다.

광대역 단상 Lock-in 증폭기 DLTS 시스템을 이용한 MOS Capacitor 계면상태 측정 (Measurements of Interface States In a MOS Capacitor by DLTS System Using Wideband Monophase Lock-in Amplifier)

  • 배동건;정상구
    • 대한전자공학회논문지
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    • 제23권6호
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    • pp.807-813
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    • 1986
  • Measurements of interface states in a MOS capacitor by DLTS system using wideband monophase lock-in amplifier are discussed. A new signal analysis method that takes into account the bias pulse width and the gate off width is presented to remove the errors in the measured parameters of interface states resulting from the traditional method which neglects the effect of those widths. Theoretical calculations are made for the parameters related to the rate window, signal to noise ratio, and the energy resolution. On the grounds of this discussion, interface states of the MOS capacitor on p-type substrate of (110) orentation are measured with the optimal gate-off width with respect to the S/N ratio and the energy resolution. The results are interface state density of the order of 10**10 (cm-\ulcornereV**-1) to 10**11 (cm-\ulcornereV**-1) in the energy range of Ev+0.15(dV) to Ev+0.5(eV), and constant capture cross section of the order of 10**-16 (cm\ulcorner.

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박막내 결정립 배열의 열적 불안정성1)-응집 모델 (Stability of the Grain Configurations of Thin Films-a Model for Agglomeration)

  • 나종주;박중근
    • 연구논문집
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    • 통권27호
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    • pp.183-200
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    • 1997
  • We have calculated the energy of three distinct grain configurations, namely completely connected, partially connected and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. "Stabilitl" diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness vs. equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.

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An Input-Powered High-Efficiency Interface Circuit with Zero Standby Power in Energy Harvesting Systems

  • Li, Yani;Zhu, Zhangming;Yang, Yintang;Zhang, Chaolin
    • Journal of Power Electronics
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    • 제15권4호
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    • pp.1131-1138
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    • 2015
  • This study presents an input-powered high-efficiency interface circuit for energy harvesting systems, and introduces a zero standby power design to reduce power consumption significantly while removing the external power supply. This interface circuit is composed of two stages. The first stage voltage doubler uses a positive feedback control loop to improve considerably the conversion speed and efficiency, and boost the output voltage. The second stage active diode adopts a common-grid operational amplifier (op-amp) to remove the influence of offset voltage in the traditional comparator, which eliminates leakage current and broadens bandwidth with low power consumption. The system supplies itself with the harvested energy, which enables it to enter the zero standby mode near the zero crossing points of the input current. Thereafter, high system efficiency and stability are achieved, which saves power consumption. The validity and feasibility of this design is verified by the simulation results based on the 65 nm CMOS process. The minimum input voltage is down to 0.3 V, the maximum voltage efficiency is 99.6% with a DC output current of 75.6 μA, the maximum power efficiency is 98.2% with a DC output current of 40.4 μA, and the maximum output power is 60.48 μW. The power loss of the entire interface circuit is only 18.65 μW, among which, the op-amp consumes only 2.65 μW.

Graphene, Cu와 Ag 나노 파우더를 이용한 열전도재의 방열 특성에 관한 연구 (A study on the heat dissipation characteristic of thermal interface materials with Graphene, Cu and Ag nano powders)

  • 박상혁;임성훈;김현지;노정필;허선철
    • 한국산업융합학회 논문집
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    • 제22권6호
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    • pp.767-773
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    • 2019
  • The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

이동형 핵종 분석 장치용 CZT 반도체 검출기의 완충전극에 대한 연구 (A Study of Interface Layer on CdZnTe Radiation Sensor for Potable Isotope Identifier)

  • 조윤호;박세환;김용균;하장호
    • 방사선산업학회지
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    • 제5권1호
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    • pp.95-99
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    • 2011
  • The electrical and mechanical properties of electrode for radiation detection are very important. In general, Au electrode and CZT crystal are combined to form ohmic contacts, and the best energy resolution is shown at the Au electrode. The metal contacts are fabricated by electroless deposition method, sputtering deposition method and thermal evaporation method. The electrode fabrication is easy with use of the thermal evaporation method, while an adhesive strength is weak. Thus interface materials such as Ag, Al and Ni were investigated to overcome defects generated by the this method. The thickness of the interface material between the Au electrode and the CZT crystal was 100 Angstroms, the Au electrode with thickness of 400 Angstroms was deposited. The Al+Au electrode is shown that the results of current-voltage and radiation response are similar to results of Au electrode.