• Title/Summary/Keyword: interface energy

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Effect of Metal Ionic Crosslinking Agents on the Water Resistance and Mechancial Properties of EVA Emulsion (EVA 에멀젼의 내수성 및 기계적 특성에 미치는 금속 이온 가교제의 효과)

  • Lee, Eun-Kyoung;Choi, Sei-Young
    • Journal of Adhesion and Interface
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    • v.9 no.2
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    • pp.24-31
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    • 2008
  • In this work, calcium hydroxide and magnesium carbonate as metal ionic crosslinking agents were used to introduce ionic crosslinking points to the ethylene vinylacetate (EVA) emulsions for the enhancement of water resistance and mechanical properties of emulsion films. The properties of EVA emulsion film were investigated in crosslinking density, thermal features, surface energy, and mechanical properties, such as tensile strength, elongation at break and tear strength. With the increasing content of metal ionic crosslinking agent, the crosslinking density of the EVA emulsion film increases, resulting into the improvement of water resistance. The surface energy and mechanical properties of the EVA emulsion film, however, showed somewhat different behaviors. The highest surface energy, tensile strength, and tear strength were observed when 0.4% for calcium hydroxide and 0.5% for magnesium carbonate was added respectively, because the EVA emulsion containing carboxylic acid forms strong carboxylate-metal bond of ionically-crosslinked system. Therefore, it can be concluded that metal ionic crosslinking agents, such as magnesium carbonate and calcium hydroxide are considered to improve water resistance and mechanical properties of the EVA emulsion.

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A Study on Critical Strain Energy Release Rate Mode II of Chemically Treated SiC-filled Epoxy Composites (표면처리된 탄화규소강화 에폭시 복합재료의 GIIC 특성)

  • Park, Soo-Jin;Oh, Jin-Seok
    • Journal of Adhesion and Interface
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    • v.6 no.4
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    • pp.1-6
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    • 2005
  • In this work, the effect of chemical treatments on surface properties of SiC was investigated in crack resistance properties of SiC/epoxy composites. The surface properties of SiC were determined by acid/base values and FT-IR measurements. Also the crack resistance properties of the composites were studied in critical strain energy release rate mode II ($G_{IIC}$) measurements. As a result, the acidically treated SiC had higher acid value than that of untreated SiC or basically treated SiC. The crack resistance properties of the composites had been improved in the specimens treated by acidic solution. These results were could be attributed to the acide-base intermolecular interaction between SiC and epoxy resin, resulting in increase of the degree of adhesion at interfaces.

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A CMOS Interface Circuit with MPPT Control for Vibrational Energy Harvesting (진동에너지 수확을 위한 MPPT 제어 기능을 갖는 CMOS 인터페이스 회로)

  • Yang, Min-jae;Yoon, Eun-jung;Yu, Chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.412-415
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    • 2015
  • This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

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Calculation of Sputter Yield using Monte Carlo Techniques (몬테카를로 방식에 의한 스퍼터율 계산에 관한 연구)

  • 반용찬;이제희;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.12
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    • pp.59-67
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    • 1998
  • In this paper, a rigorous three-dimensional Monte Carlo approach to simulate the sputter yield as a function of the incident ion energy and the incident angle as well as the atomic ejection distribution of the target is presented. The sputter yield of the target atom (Cu, Al) has been calculated for the different species of the incident atoms with the incident energy range of 10 eV ~ 100 KeV, which coincides with the previously reported experimental results. According to the simulation results, the calculated sputter yield tends to increase with the amount of the energy of the incident atoms. Our simulation revealed that the maximum sputter yield can be obtained for the incident atom with 10 KeV for the heavy ion, while the maximum sputter yield for the light ion is for the incident atoms with an energy less than 1 KeV. The sputter yield increases with angle of incidence and seems to have the maximum value at 68$^{\circ}$. For angular distributions of the sputtered particle, the atoms in the direction normal to the surface increase with angle of incidence. Furthermore, we has conducted the parallel computation on CRAY T3E supercomputer and built a GUI(Graphic User Interface) system running the sputter simulator.

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Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration (3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향)

  • Jang, Eun-Jung;Pfeiffer, Sarah;Kim, Bi-Oh;Mtthias, Thorsten;Hyun, Seung-Min;Lee, Hak-Joo;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.204-210
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    • 2008
  • $1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

Evaluation of Adhesion Property of Epoxy Adhesive with Different Surface Roughness of GFRC (유리섬유강화 복합재료의 표면거칠기에 따른 에폭시 접착제의 접착강도 평가)

  • Kim, Jong-Hyun;Shin, Pyeong-Su;Lee, Sang-Il;Park, Joung-Man
    • Journal of Adhesion and Interface
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    • v.21 no.1
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    • pp.27-33
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    • 2020
  • Adhesion property of epoxy adhesive was evaluated with different surface roughness of glass fiber reinforced composite (GFRC) and optimized condition of surface roughness was confirmed. Different sizes of alumina (Al2O3) particles were blasted to GFRC to control surface roughness of GFRC using sand blasting method. The surface roughness was measured and quantified via surface roughness tester. Contact angle was measured using four types of different solvents. Surface energies and work of adhesion between epoxy adhesive and GFRCs were calculated with different surface roughness of GFRC. Adhesion property between epoxy adhesive and GFRCs was evaluated using single lap shear test and adhesion property increased with surface roughness of GFRC. The fracture surface of GFRCs was observed to evaluate adhesion property. Finally, the optimized roughness condition of GFRCs was confirmed.

Low Power Wireless Interfacing Scheme Controlling Virtual Bitmap in IEEE 802.11b (IEEE 802.11b에서 가상비트맵을 제어하는 저전력 무선 접속 기법)

  • Song Myong-Lyol
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.1A
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    • pp.65-71
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    • 2006
  • In IEEE 802.11b wireless network, the access point(AP) sends beacons periodically to manage stations when they are running in low power mode. Stations contend for the transmission medium after they receive a beacon and continuously check its state until it becomes available. Thus the energy consumption of each station increases as the load of wireless network. In this paper, we propose a method to reduce energy consumption controlling virtual bitmap in wireless network with multiple stations. The problems of low power mode in IEEE 802.11b wireless interface are described and a new method to reduce energy consumption is proposed. The proposed method is simulated with the network simulator, ns2, and compared with the low power mode of the IEEE 802.11b. The result measured in terms of station's wakeup time shows some enhancement in energy consumption when multiple stations are communicating through the AP in wireless network.

Active Materials for Energy Conversion and Storage Applications of ALD

  • Sin, Hyeon-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.75.2-75.2
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    • 2013
  • Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

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Growth and thermal annealing of polycrystalline Ga2O3/diamond thin films on Si substrates (다결정 산화갈륨/다이아몬드 이종 박막 성장 및 열처리 효과 연구)

  • Seo, Ji-Yeon;Kim, Tae-Gyu;Shin, Yun-Ji;Jeong, Seong-Min;Bae, Si-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.6
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    • pp.233-239
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    • 2021
  • In this study, Ga2O3/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga2O3 materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga2O3 layer was grown in the growth temperature range of from 450~600℃ by mist chemical vapor deposition. We found that layer separation happens at the Ga2O3/diamond interface at the growth temperature of 500℃. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing the thermal properties at Ga2O3/diamond interface.

Vibration Control for a Single Degree of Freedom Structure Using Active Friction Slip Braces (능동 조임 마찰 가새로 보강한 단자유도 구조물의 응답)

  • Lee, Jin-Ho;Zekai, Akbay;Kim, Jung-Gil;Oh, Sang-Gyun
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.10 no.1
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    • pp.131-138
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    • 2006
  • Structural bracing concept equipped with a new and efficient friction based energy dissipation device is referred to Friction SliP Brace (FSB) where the behavior of the brace components is elastic until the axial resistant force in the brace exceeds the friction force developed at the frictional interface of the device. In this study, the FSB concept is modified and new type of hybrid energy dissipation device, the Active Friction SliP Braces (AFSB), is described. The FSB is by far improved in the AFSB by inclusion of an active clamping mechanism on the friction interface. The clamping action regulated by the developed algorithm is altered during the response of the building. The results indicate that the action of dissipating vibrational energy in the AFSB impacts on the response at later cycles by keeping the drift amplitudes at much lower levels, revealing overshooting problem due to its early slippage. Providing predetermined constant incremental strengths to the building by AFSB medium improves response by reducing drift amplitudes and base shear under small and medium amplitude ground accelerations.