• Title/Summary/Keyword: interface energy

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Development of Novel Materials for Reduction of Greenhouse Gases and Environmental Monitoring Through Interface Engineering

  • Hirano, Shin-Ichi;Gang, Seok-Jung L.;Nowotny, Janusz-Nowotny;Smart, Roger-St.C.Smart;Scrrell, Charles-C.Sorrell;Sugihara, Sunao;Taniguchi, Tomihiroi;Yamawaki, Michio;Yoo
    • Korean Journal of Materials Research
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    • v.9 no.6
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    • pp.635-653
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    • 1999
  • The present work considers work considers research strategies to address global warming. Specifically, this work considers the development of technologies of importance for the reduction of greenhouse gas emission and, especially, the materials that are critical to these technologies. It is argued that novel materials that are essential for the production of environmentally friendly energy may be developed through a special kind of engineering: interface engineering, rather than through classical bulk chemistry. Progress on the interface engineering requires to increase the present state of understanding on the local properties of materials interfaces and interfaces processes. This, consequently, requires coordinated international efforts in order to establish a strong background in the science of materials interfaces. This paper considers the impact of interfaces, such as surfaces and grain boundaries, on the functional properties of materials. This work provides evidence that interfaces exhibit outstanding properties that are not displayed by the bulk phase. It is shown that the local interface chemistry and structure and entirely different than those of the bulk phase. In consequence the transport of both charge and matter along and across interfaces, that is so important for energy conversion, is different than that in the bulk. Despite that the thickness of interfaces is of an order to a nanometer, their impact on materials properties is substantial and, in many cases, controlling. This leads to the conclusion that the development of novel materials with desired properties for specific industrial applications will be possible through controlled interface chemistry. Specifically, this will concern materials of importance for energy conversion and environmental monitoring. Therefore, there is a need to increase the present state of understanding of the local properties of materials interfaces and the relationship between interfaces and the functional properties of materials. In order to accomplish this task coordinated international efforts of specialized research centres are required. These efforts are specifically urgent regarding the development of materials of importance for the reduction of greenhouse gases. Success of research in this area depends critically on financial support that can be provided for projects on materials of importance for a sustainable environment, and these must be considered priorities for all of the global economies. The authors of the present work represent an international research group economies. The authors of the present work represent an international research group that has entered into a collaboration on the development of the materials that are critical for the reduction of greenhouse gas emissions.

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Mechanical and metallurgical properties of diffusion bonded AA2024 Al and AZ31B Mg

  • Mahendran, G.;Balasubramanian, V.;Senthilvelan, T.
    • Advances in materials Research
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    • v.1 no.2
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    • pp.147-160
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    • 2012
  • In the present study, diffusion bonding was carried out between AZ31B magnesium and AA2024 aluminium in the temperature range of $405^{\circ}C$ to $475^{\circ}C$ for 15 min to 85 min and 5MPa to 20 MPa uniaxial loads was applied. Interface quality of the joints was assessed by microhardness and shear testing. Also, the bonding interfaces were analyzed by means of optical microscopy, scanning electron microscopy, energy dispersive spectrometer and XRD. The maximum bonding and shear strength was obtained at $440^{\circ}C$, 12 MPa and 70 min. The maximum hardness values were obtained from the area next to the interface in magnesium side of the joint. The hardness values were found to decrease with increasing distance from the interface in magnesium side while it remained constant in aluminium side. It was seen that the diffusion transition zone near the interface consists of various phases of $MgAl_2O_4$, $Mg_2SiO_4$ and $Al_2SiO_5$.

Plastic Flow Direction and Strength Evaluation of Dissimilar Fiction Bonding Interface Joints (이종마찰 접합계면부의 소성유동 방향성 및 강도 평가)

  • Oh, Jung-Kuk;Sung, Back-Sub
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.5
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    • pp.43-50
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    • 2002
  • Friction welding has many merits such as energy efficiency, simple processing, etc butt difficult to obtain good weld at the welded interface and heat affected zone. To date, the continuum mechanics and fracture mechanics are utilized to analyse stresses at the interface and propagation of cracks. In this study. STS304 and SM15C are selected because they can be differentiated distinctively from metallic point of view and crack can be observed easily. It is ovserved during friction welding that STS304, rotary part is hatter than SH15C, fixed part. The last fracture occurs around the center because the surface of fatigue fracture has smooth regions, due to the separation phenomenon in plastic flows layers and striation dimple pattern.

Organic Thin-Film Transistors with Screen Printed Silver Source/Drain Electrodes

  • Kim, Sam-Soo;Kim, Min-Soo;Choi, Gyu-Seok;Kim, Heon-Gon;Kim, Yong-Bae;Lee, Dong-Gu;Roh, Jae-Seong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1305-1307
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    • 2007
  • We show that the electrical properties of organic thinfilm transistors(OTFTs) can be enhanced by controlling the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer($SiO_2$) affect on the interface energy of electrode on $SiO_2$ layer. Contact angle measurement and FT-IR spectrum shows that the interface is properly modified. OTFTs device with high efficiency has been realized through modification of interface layer.

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A NUMERICAL STUDY ON A THIN FILM MANUFACTURING PROCESS USING THE CONTROL OF SURFACE ENERGY OF A MICRODROPLET (미세액적의 표면에너지 제어를 통한 박막 제조 공정에 대한 연구)

  • Suh, Y.;Son, G.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03a
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    • pp.221-226
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    • 2008
  • Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

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A NUMERICAL STUDY ON A THIN FILM MANUFACTURING PROCESS USING THE CONTROL OF SURFACE ENERGY OF A MICRODROPLET (미세액적의 표면에너지 제어를 통한 박막 제조 공정에 대한 연구)

  • Suh, Y.;Son, G.
    • 한국전산유체공학회:학술대회논문집
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    • 2008.10a
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    • pp.221-226
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    • 2008
  • Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

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Effect of Interface in Three-phase Cord-Rubber Composites (세 가지 상을 갖는 코드섬유-고무 복합재료의 계면의 영향)

  • Kim, Jong-Kuk;Yum, Young-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.11
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    • pp.1249-1255
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    • 2009
  • Cord-rubber composites widely used in tires show very complicated mechanical behavior such as nonlinearity and large deformation. Three-phase(cord, rubber and the interface) modeling has been used to analyze the stress distribution in the cord-rubber composites more accurately. In this study, finite element methods were performed using two-dimensional generalized plane strain element and plane strain element to investigate the stress distribution and effective modulus of cord-rubber composites. Neo Hookean model was used for rubber property and several interface properties were assumed for various loading directions. It was found that the interface properties affect the effective modulus and the distributions of shear stress.

The Molecular Structures of Poly(3-hexylthiophene) Films Determine the Contact Properties at the Electrode/Semiconductor Interface

  • Park, Yeong Don
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2277-2280
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    • 2014
  • The contact properties between gold and poly(3-hexylthiophene) (P3HT) films having either of two distinct molecular orientations and orderings were investigated. Thermal treatment increased the molecular ordering of P3HT and remarkably reduced the contact resistance at the electrode/semiconductor interface, which enhanced the electrical performance. This phenomenon was understood in terms of a small degree of metal penetration into the P3HT film as a result of the thermal treatment, which formed a sharp interface at the contact interface between the gold electrode and the organic semiconductor.

Interface Migration lnduced by Nonstoichiometry and Dielectric Property of Nb-doped $SrTiO_3$ (Nonstoichiometry에 의한 Nb-doped $SrTiO_3$의 계면 이동과 유전 성질)

  • Jeon, Jae-Ho;Gang, Seok-Jung
    • 연구논문집
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    • s.25
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    • pp.185-192
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    • 1995
  • The solid/liquid interface migration in Nb-doped $SrTiO_3$ and its effect on dielectric properties have been investigated. The specimen sintered in air shows no migration during oxide infiltration treatment in air, whereas the specimen sintered in $5H_2-95N_2$ shows appreciable migration during similar infiltration. In the migrated layers of the specimen sintered in a reducing atmosphere, no cations of the infiltrants are detected by wavelength dispersive spectroscopy. These results show that nonstoichiometry due to the atmosphere change can induce the interface migration as in the case of frequently observed migrations due to solute concentration change. The driving force for the migration is discussed in terms of the coherency strain energy in a thin diffusional oxidized layer of the receding grain. The interface migration caused by nonstoichiometry could be suppressed by preoxidizing grain surfaces before oxide infiltration treatment. The suppression of migration increased the effective dielectric constant of the material.

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Surface and Interface Analysis with Medium Energy Ion Scattering Spectroscoppy

  • Moon, Dae-Wom
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.129-129
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    • 1998
  • Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

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