• Title/Summary/Keyword: interface energy

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Finite Element Analysis for Fracture Resistance of Fiber-reinforced Asphalt Concrete (유한요소해석을 통한 섬유보강 아스팔트의 파괴거동특성 분석)

  • Baek, Jongeun;Yoo, Pyeong Jun
    • International Journal of Highway Engineering
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    • v.17 no.3
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    • pp.77-83
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    • 2015
  • PURPOSES : In this study, a fracture-based finite element (FE) model is proposed to evaluate the fracture behavior of fiber-reinforced asphalt (FRA) concrete under various interface conditions. METHODS : A fracture-based FE model was developed to simulate a double-edge notched tension (DENT) test. A cohesive zone model (CZM) and linear viscoelastic model were implemented to model the fracture behavior and viscous behavior of the FRA concrete, respectively. Three models were developed to characterize the behavior of interfacial bonding between the fiber reinforcement and surrounding materials. In the first model, the fracture property of the asphalt concrete was modified to study the effect of fiber reinforcement. In the second model, spring elements were used to simulated the fiber reinforcement. In the third method, bar and spring elements, based on a nonlinear bond-slip model, were used to simulate the fiber reinforcement and interfacial bonding conditions. The performance of the FRA in resisting crack development under various interfacial conditions was evaluated. RESULTS : The elastic modulus of the fibers was not sensitive to the behavior of the FRA in the DENT test before crack initiation. After crack development, the fracture resistance of the FRA was found to have enhanced considerably as the elastic modulus of the fibers increased from 450 MPa to 900 MPa. When the adhesion between the fibers and asphalt concrete was sufficiently high, the fiber reinforcement was effective. It means that the interfacial bonding conditions affect the fracture resistance of the FRA significantly. CONCLUSIONS : The bar/spring element models were more effective in representing the local behavior of the fibers and interfacial bonding than the fracture energy approach. The reinforcement effect is more significant after crack initiation, as the fibers can be pulled out sufficiently. Both the elastic modulus of the fiber reinforcement and the interfacial bonding were significant in controlling crack development in the FRA.

A Study on filament Winding Process of A CNG Composite Pressure Vessel (필라멘트 와인딩 압력용기의 최적설계와 CNG자동차 연료 충진용기 개발)

  • Kim, Eui-Soo;Kim, Ji-Hoon;Park, Yoon-So;Kim, Chul;Choi, Jae-Chan
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.10a
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    • pp.933-937
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    • 2002
  • The fiber reinforced composite material is widely used in the multi-industrial field where the weight reduction of the infrastructure is demanded because of their high specific modulus and specific strength. Pressure vessels using this composite material in comparison with conventional metal vessels can be applied in the field where lightweight and the high pressure are demanded from the defense and aerospace industry to rocket motor case due to the merits which are energy cutdown the weight reduction and decrease of explosive damage preceding to the sudden explosion which is generated by the pressure leakage condition). In this paper, for nonlinear finite element analysis of E-glass/epoxy filament winding composite pressure vessel receiving an internal pressure, the standard interpretation model is developed by using the ANSYS, general commercial software, which is verified as the accuracy and useful characteristic of the solution based on Auto LISP and ANSYS APDL. Both the preprocessor for doing exclusive analysis of filament winding composite pressure vessel and postprocessor that simplifies result of analysis have been developed to help the design engineers.

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Projection of the Climate Change Effects on the Vertical Thermal Structure of Juam Reservoir (기후변화가 주암호 수온성층구조에 미치는 영향 예측)

  • Yoon, Sung Wan;Park, Gwan Yeong;Chung, Se Woong;Kang, Boo Sik
    • Journal of Korean Society on Water Environment
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    • v.30 no.5
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    • pp.491-502
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    • 2014
  • As meteorology is the driving force for lake thermodynamics and mixing processes, the effects of climate change on the physical limnology and associated ecosystem are emerging issues. The potential impacts of climate change on the physical features of a reservoir include the heat budget and thermodynamic balance across the air-water interface, formation and stability of the thermal stratification, and the timing of turn over. In addition, the changed physical processes may result in alteration of materials and energy flow because the biogeochemical processes of a stratified waterbody is strongly associated with the thermal stability. In this study, a novel modeling framework that consists of an artificial neural network (ANN), a watershed model (SWAT), a reservoir operation model(HEC-ResSim) and a hydrodynamic and water quality model (CE-QUAL-W2) is developed for projecting the effects of climate change on the reservoir water temperature and thermal stability. The results showed that increasing air temperature will cause higher epilimnion temperatures, earlier and more persistent thermal stratification, and increased thermal stability in the future. The Schmidt stability index used to evaluate the stratification strength showed tendency to increase, implying that the climate change may have considerable impacts on the water quality and ecosystem through changing the vertical mixing characteristics of the reservoir.

The Effects of Doping Hafnium on Device Characteristics of $SnO_2$ Thin-film Transistors

  • Sin, Sae-Yeong;Mun, Yeon-Geon;Kim, Ung-Seon;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.199-199
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    • 2011
  • Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

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Rear Surface Passivation with Al2O3 Layer by Reactive Magnetron Sputtering for High-Efficiency Silicon Solar Cell

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Jeon, Jun-Hong;Choi, Jin-Young;Kim, Dong-Hwan;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.211-211
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    • 2012
  • The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

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Effects of Dopants Introduced into the Poly-Si on the Formation of Ti-Silicides (Poly-Si에 첨가한 도펀트가 Titanium Silicides 형성에 미치는 영향 Ⅱ)

  • Ryu, Yeon-Soo;Choi, Jin-Seog;Paek, Su-Hyon
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.2
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    • pp.73-80
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    • 1990
  • The formation of Ti-silicides with the type of substrate, the species and the concentration of dopant, and the annealing temperature was investigated with sheet resistance and thickness measurement, elemental depth profilling, and microstructure. It was directly affected by the type of substrate, the species and the concentration of dopant, and the annealing temperature. For the amorphous Si substrate, the smothness of $TiSi_2/Si$ interface was increased. Above concentr-ation of $1{\times}10^{16}ions/cm^2$, the rate of $TiSi_2/Si$ formation was decreased and the sheet resistance was increased. The initial profile of dopant according to the implantation energy was one of the factors influencing the out-diffusion of dopant. In $POCI_3$ process, this was less than in ion implantation process.

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CURRENT RESEARCH ON ACCELERATOR-BASED BORON NEUTRON CAPTURE THERAPY IN KOREA

  • Kim, Jong-Kyung;Kim, Kyung-O
    • Nuclear Engineering and Technology
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    • v.41 no.4
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    • pp.531-544
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    • 2009
  • This paper is intended to provide key issues and current research outcomes on accelerator-based Boron Neutron Capture Therapy (BNCT). Accelerator-based neutron sources are efficient to provide epithermal neutron beams for BNCT; hence, much research, worldwide, has focused on the development of components crucial for its realization: neutron-producing targets and cooling equipment, beam-shaping assemblies, and treatment planning systems. Proton beams of 2.5 MeV incident on lithium target results in high yield of neutrons at relatively low energies. Cooling equipment based on submerged jet impingement and micro-channels provide for viable heat removal options. Insofar as beam-shaping assemblies are concerned, moderators containing fluorine or magnesium have the best performance in terms of neutron accumulation in the epithermal energy range during the slowing-down from the high energies. NCT_Plan and SERA systems, which are popular dose distribution analysis tools for BNCT, contain all the required features (i.e., image reconstruction, dose calculations, etc.). However, detailed studies of these systems remain to be done for accurate dose evaluation. Advanced research centered on accelerator-based BNCT is active in Korea as evidenced by the latest research at Hanyang University. There, a new target system and a beam-shaping assembly have been constructed. The performance of these components has been evaluated through comparisons of experimental measurements with simulations. In addition, a new patient-specific treatment planning system, BTPS, has been developed to calculate the deposited dose and radiation flux in human tissue. It is based on MCNPX, and it facilitates BNCT efficient planning based via a user-friendly Graphical User Interface (GUI).

Plasmonic Nanosheet towards Biosensing Applications

  • Tamada, Kaoru
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.105-106
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    • 2013
  • Surface plasmon resonance (SPR) is classified into the propagating surface plasmon (PSP) excited on flat metal surfaces and the local surface plasmon (LSP) excited by metalnanoparticles. It is known that fluorescence signals are enhanced by these two SPR-fields.On the other hand, fluorescence is quenched by the energy transfer to metal (FRET). Bothphenomena are controlled by the distance between dyes and metals, and the degree offluorescence enhancement is determined by the correlation. In this study, we determined thecondition to achieve the maximum fluorescence enhancement by adjusting the distance of ametal nanoparticle 2D sheet and a quantum dots 2D sheet by the use of $SiO_2$ spacer layers. The 2D sheets consisting of myristate-capped Ag nanoparticles (AgMy nanosheets) wereprepared at the air-water interface and transferred onto hydrophobized gold thin films basedon the Langmuir-Schaefer (LS) method [1]. The $SiO_2$ sputtered films with different thickness (0~100 nm) were deposited on the AgMy nanosheet as an insulator. TOPO-cappedCdSe/CdZnS/ZnS quantum dots (QDs, ${\lambda}Ex=638nm$) [2] were also transferred onto the $SiO_2$ films by the LS method. The layered structure is schematically shown in Fig. 1. The result of fluorescence measurement is shown in Fig. 2. Without the $SiO_2$ layer, the fluorescence intensity of the layered QD film was lower than that of the original QDs layer, i.e., the quenching by FRET was predominant. When the $SiO_2$ thickness was increased, the fluorescence intensity of the layered QD film was higher than that of the original QDs layer, i.e., the SPR enhancement was predominant. The fluorescence intensity was maximal at the $SiO_2$ thickness of 20 nm, particularly when the LSPR absorption wavelength (${\lambda}=480nm$) was utilized for the excitation. This plasmonic nanosheet can be integrated intogreen or bio-devices as the creation point ofenhanced LSPR field.

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방사광 가속기의 광전자 분광법을 이용한 전면 발광 유기발광 다이오드에서의 열중착 산화구리와 유기물 사이의 계면 dipole 에너지 및 정공 주입 효율에 대한 연구

  • Kim, Seong-Jun;Hong, Gi-Hyeon;Kim, Gi-Su;Lee, Il-Hwan;Lee, Jong-Ram
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.8-10
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    • 2010
  • We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

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Influence of Ag Precoating of $Bi_{2212}$ Superconductor-In Base Solder Soldering ($Bi_{2212}$ 초전도체와 In 계열 solder의 soldering에서 Ag precoating의 영향)

  • Jang Ji-Hoon;Kim Sang-Hyun;Shin Seung-Yong;Lee Yong-Chul;Kim Chan-Joong;Hyun Ok-Bae;Park Hae-Woong
    • Journal of Surface Science and Engineering
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    • v.39 no.2
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    • pp.57-63
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    • 2006
  • In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.