• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.351-357
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• 2005

Comparison of shear strength and shear energy of the 48Sn-52In solder bumps reflowed on Cu UBM were made with variations of reflow temperature from $150^{\circ}C$ to $250^{\circ}C$ and reflow time from 1 min to 20 min to establish an evaluation method for the mechanical reliability of solder bumps. Compared to the shear strength, the shear energy of the Sn-52In solder bumps was much more consistent with the solder reaction behavior and the fracture mode at the Sn-52In/Cu interface, indicating that the bump shear energy can be used as an effective tool to evaluate the mechanical integrity of solder/UBM interface.

• Journal of Adhesion and Interface
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• v.4 no.4
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• pp.1-6
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• 2003

After atmospheric pressure plasma treatment of polypropylene(PP) film surface, we measured the contact angle of the surface by using polar solvent (water) and non-polar solvent (diiodomethane). We also calculated the surface free energy of PP film by using the measured values of contact angles. And then we analyzed contact angle and surface free energy with changing the condition of atmospheric pressure plasma treatment. Upon each condition of atmospheric plasma treatment, contact angle and surface free energy showed an optimum value or leveled off.

• Analytical Science and Technology
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• v.19 no.5
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• pp.407-414
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• 2006

An X-ray diffractometer for spatially resolved X-ray diffraction measurements was developed to identify phase in the narrow (micron-scaled) region of high burn-up fuels and some nuclear materials. The micro-XRD was composed of an X-ray microbeam alignment system and a sample micro translation system instead of a normal slit and a fixed sample stage in a commercial XRD. The X-ray microbeam alignment system was fabricated with a microbeam concentrator having two Ni deposited mirrors, a vertical positioner, and a tilt table for the generation of a concentrated microbeam. The sample micro translation system was made with a sample holder and a horizontal translator, allowing movement of a specimen at $5{\mu}m$ steps. The angular intensity profile of the microbeam generated through a concentrator was symmetric and not distorted. The size of the microbeam was $4,000{\times}20{\mu}m$ and the spatial resolution of the beam was $47{\mu}m$ at the sample position. When the diffraction peaks were measured for a $UO_2$ pellet specimen by this system, the reproducibility ($2{\Theta}={\pm}0.01^{\circ}$) of the peaks was as good as a conventional X-ray diffractometer. For the cross section of oxidized titanium metal, not only $TiO_2$ in an outer layer but also TiO near an oxide-metal interface was observed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.134-134
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• 2012

We investigated the interface of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) by using photoelectron spectroscopy (PES). These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. Study of the BHJ interfaces is difficult because the organic films are typically prepared by spin coating in ambient conditions. This is incompatible with the interface electronic structure probes such as PES, which requires ultrahigh vacuum conditions. Study of interface requires gradual deposition of thin films that is also incompatible with the spin coating process. In this work, we used electrospray vacuum deposition (EVD) technique to deposit P3HT and PCBM in high vacuum conditions. EVD allows us to form polymer thin films onto ITO substrate in a step-wise manner directly from solutions and to use PES without exposing the sample to the ambient condition. Although the morphology of the EVD deposited P3HT films observed by optical and atomic force microscopes is quite different from that of the spin coated ones, the valence region spectra were similar. PCBM was deposited on the P3HT film in a similar manner and the energy level alignment between these two materials was studied. We discuss the relation between Voc of P3HT:PCBM solar cell and HOMO-LUMO energy offset obtained in this study.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.2
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• pp.227-234
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• 2019

A user-friendly modeling interface is developed for a process-based total system performance assessment framework (APro) specialized for a generic geological disposal system for high-level radioactive waste. The APro modeling interface is constructed using MATLAB, and the operator splitting scheme is used to combine COMSOL for simulation of multiphysics and PHREEQC for the calculation of geochemical reactions. As APro limits the modeling domain to the generic disposal system, the degree of freedom of the model is low. In contrast, the user-friendliness of the model is improved. Thermal, hydraulic, mechanical and chemical processes considered in the disposal system are modularized, and users can select one of multiple modules: "Default process" and multi "Alternative process". APro mainly consists of an input data part and calculation execution part. The input data are prepared in a single EXCEL file with a given format, and the calculation part is coded using MATLAB. The final results of the calculation are created as an independent COMSOL file for further analysis.

• 한국전자현미경학회:학술대회논문집
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• 1995.12a
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• pp.7-7
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• 1995

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.92-92
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.184.1-184.1
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• 2007

• Communications of the Korean Mathematical Society
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• v.22 no.3
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• pp.453-464
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• 2007

A computationally efficient numerical scheme is presented for the phase-field model of two-phase systems for anisotropic interfacial energy. The scheme is solved by using a nonlinear multigrid method. When the coefficient for the anisotropic interfacial energy is sufficiently high, the interface of the system shows corners or missing crystallographic orientations. Numerical simulations with high and low anisotropic coefficients show excellent agreement with exact equilibrium shapes. We also present spinodal decomposition, which shows the robustness of the pro-posed scheme.