• Progress in Superconductivity
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• v.5 no.2
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• pp.144-148
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• 2004

Uniform current distribution among conductor layers in HTS cables using IPTs (inter-phase transformers) was investigated. Conventional methods for current distribution, in which resistors are inserted to conductor layers, causes additional loss. In contrast, IPTs, which use magnetic coupling, make it possible that the current in parallel circuits is distributed uniformly with any load, and minimize the loss. In this study, IPTs were designed and fabricated for examination of uniform current distribution in the conductor layers of HTS cables. The ITP was designed through calculation of its impedance that can cancel the inductance of the conduction layers. The experimental setup consisted of four IPTs and four inductors that simulate the conductor layer inductance. Each layer was designed to feed 10 A. We examined the behavior of current distribution with IPTs for various layer inductances.

• Journal of Magnetics
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• v.6 no.4
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.1-6
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• 2007

This study investigated the magnetic properties of $Ni_{80}Fe_{20}/SiO_2$ laminates with shape-induced magnetic anisotropy. The multilayer films were deposited on Si or upilex substrates, from separate $Ni_{80}Fe_{20}$ and $SiO_2$ (at %) alloy targets using a rf diode sputtering system. $Ni_{80}Fe_{20}/SiO_2$ laminates with a various number of bilayers (N) were prepared. The laminates with ellipse array patterns were prepared using photolithographic technique. The magnetic properties were measured at room temperature using a B-H hysteresisgraph and a high frequency permeameter. The several steps during domain wall reversal were observed in multilayer films, attributing to inter-magnetic layer coupling. Intrinsic uniaxial anisotropy field increases with N. The experimental values of the total anisotropy field are found to be in good agreement with the calculated values. This study utilized the shape anisotropy of the laminated film objects with small ellipse array patterns to induce a larger uniaxial anisotropy so as to maximize their operating frequency.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.573-578
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• 2003

The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.