• Journal of Environmental Science International
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• v.26 no.4
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• pp.543-547
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• 2017

Normalized Difference Vegetation Index (NDVI) has played an important role in assessing green plant biomass through remote sensing on global scale since the early 1970s. The concept of NDVI is based on the fact that green plants show higher reflection in near-infrared region than in visible region of the electromagnetic spectrum. However, it is well known that the relocation of chloroplasts in plant leaf cells may dramatically change the optical properties of plant leaves. In this study I traced the changes in the reflectance and transmittance properties of Tobacco leaves at the wavelengths of 660 and 800 nm after a sudden increase in light intensity. The results showed that NDVI of leaves gradually decreased from 72.7% to 69.9% when exposed to a sudden increase in light intensity from 30 to $1,200{\mu}mol/m^2{\cdot}s$. This means that the error resulting from the physiological status of the plant should be accounted for a more precise understanding of ground truth corresponding to the data from the remotely acquired images.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1316-1317
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• 2011

This paper presents analysis of temperature and light intensity characteristics of PV modules with solar cell type. Taking the effect of sunlight irradiance on the cell temperature, the first experiment takes ambient temperature as reference input and uses the solar insolation as a unique varying parameter. Then taking the effect of the cell temperature on sunlight irradiance, the second experiment takes 1000W/$m^2$ as reference input and uses the cell temperature as a unique varying parameter. As a result, varying sunlight irradiance, the Cell-Type with the smallest change in output is HIT and the Cell-Type with the biggest change in output is a-Si. Varying the cell temperature, the Cell-Type with the smallest change in output is a-Si and the Cell-Type with the biggest change in output is Single-Si. And considering both temperature and light intensity characteristics, the Cell-Type with the smallest change in output is HIT.

• Journal of the korean academy of Pediatric Dentistry
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• v.28 no.2
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• pp.199-206
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• 2001

The purpose of study was to compare the plasma arc light with the halogen light in compostie resin curing. Three composite resin materials(Z-100, 3M, USA; Tetric Ceram, Vivadent, Liechtenstein; SureFil, Dentsply, USA) were filled in the teflon molds (4mm in diameter and 2, 3, 4, 5mm in thickness) and cured with either the conventional low-intensity light curing unit with a halogen lamp (Optilux 360, Demetron, U.S.A.) for duration of 40 seconds or with the high-intensity light curing unit with a plasma arc lamp (Flipo, Lokki, France) for duration of 3, 6, and 9 seconds. The intensity of halogen light was about $370mW/cm^2$ and that of plasma light was about $1,900mW/cm^2$. After one week, the surface hardnesses of both the top and the bottom of the resin samples were measured with a microhardness tester(MXT70, Matsuzawa, Japan). There were significant differences in the hardness between the top and the bottom of the resin samples except the 2mm thickness samples cured by halogen light for 40s or by plasma light for 9s. There was no significant difference between the hardness values of the top surfaces of the thickness groups. The hardness values of the bottom surfaces decreased as the curing time decreased and as the thickness of resin samples increased, and the three kinds of resin composites showed similar patterns. The results suggest that the halogen light for 40 seconds might be able to cure greater depth of resin composites than the plasma light for 3, 6, or 9 seconds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• KSBB Journal
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• v.14 no.4
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• pp.414-421
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• 1999

The influenced of light intensity, cell density, and light pathlength on photosynthetic activity of Chlorella vulgaris were investigated. Since the light respon curve varied according to reaction conditions, the parameters estimated from nonlinear regression were proved to be apparent and could not be applied to various situations. The light response model incorporating the light penetration through the microalgal suspension was developed based upon the spatial distribution of the photosynthetic activity. This model showed a good agreement with experimental data at different cell densities and light intensities. Using the model the effects of cell density and light pathlenth were simulated and some dicussions about optimization of operation conditions of photobioreactors were carried out. Concludingly, the developed model can be useful for predicting microalgal photosynthesis and for determining the optimal operating conditions.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.253-257
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• 2011

This study was carried out to solve problems such as radio frequency band depletion, confusion risk, and security loss in existing visible wireless communication systems, and to determine the applicability of next-generation networks. A light-emitting diode (LED) light communication system was implemented with a controlling switching light module using the ATmega16 micro-controller. To solve the existing modulation effect and disturbance in visible light communication, an integrated interface was evaluated with a driving light module and analyzes its reception property. A transmitter/receiver using the ATmel's micro-controller, high-intensity white LED-6 modules, and infrared sensor KSM60WLM and visible sensor TSL250RD were designed. An experiment from the initial value of distance to 2.5 m showed 0.46 V of the voltage loss, and if in long distance, external light interference occurred and light intensity was lost by external impact and thus data had to be modified or reset repeatedly. Additionally, when we used 6 modules through the remote controller's lighting dimming, data could be transmitted up to 1.76 m without any errors during the day and up to 2.29 m at night with around 2~3% communication error. If a special optical filter can reduce as much external light as possible in the integrated interface, the LED for lighting communication systems may be applied in next generation networks.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.323-329
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• 1993

In this paper, dependence of the diffraction efficiency upon incident light intensity is studied. The conductivity ratio, which is dependent upon the incident light intensity, changes the static electric field in a crystal. This change of the static electric field modulates the refractive index via linear electro-optic effect. And the change of the refractive index affects the diffraction efficiency. It is found that experimental results with $Fe:LiNbO_3$ crystals are in good agreement with the theory.

• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.663-667
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• 2017

Delayed hydride cracking (DHC) was first observed in pressure tubes in Canadian CANDU reactors. In light water reactors, DHC was not observed until the late 1990s in high-burnup boiling water reactor (BWR) fuel cladding. In recent years, the focus on DHC has resurfaced in light of the increased interest in the cladding integrity during interim conditions. In principle, all spent fuel in the wet pools has sufficient hydrogen content for DHC to operate below $300^{\circ}C$. It is therefore of importance to establish the critical parameters for DHC to operate. This work studies the threshold stress intensity factor ($K_{IH}$) to initiate DHC as a function of temperature in Zry-4 for temperatures between $227^{\circ}C$ and $315^{\circ}C$. The experimental technique used in this study was the pin-loading testing technique. To determine the $K_{IH}$, an unloading method was used where the load was successively reduced in a stepwise manner until no cracking was observed during 24 hours. The results showed that there was moderate temperature behavior at lower temperatures. Around $300^{\circ}C$, there was a sharp increase in $K_{IH}$ indicating the upper temperature limit for DHC. The value for $K_{IH}$ at $227^{\circ}C$ was determined to be $2.6{\pm}0.3MPa$ ${\surd}$m.